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Journal ArticleDOI

Three-terminal superconducting devices

William J. Gallagher
- 01 Mar 1985 - 
- Vol. 21, Iss: 2, pp 709-716
TLDR
In this article, the authors discuss the additional properties a transistor would need to have for high performance applications at temperatures where superconductivity could contribute advantages to system-level performance, and conclude that the potentially very rewarding search for a transistor compatible with superconductivities in high-speed, high-density cryogenic applications must be in new directions.
Abstract
The transistor has a number of properties that make it so useful. We discuss these and the additional properties a transistor would need to have for high performance applications at temperatures where superconductivity could contribute advantages to system-level performance. These properties then serve as criteria by which to evaluate three-terminal devices that have been proposed for applications at superconducting temperatures. FETs can retain their transistor properties at low temperatures, but their power consumption is too large for high-speed, high-density cryogenic applications. We discuss in detail why demonstrated superconducting devices with three terminals - Josephson effect based devices, injection controlled weak links, and stacked tunnel junction devices such as the superconducting transistor proposed by K. Gray and the quiteron - each fail to have true transistor-like properties. We conclude that the potentially very rewarding search for a transistor compatible with superconductivity in high performance applications must be in new directions.

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Citations
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Journal ArticleDOI

Development of the magnetic tunnel junction MRAM at IBM: from first junctions to a 16-Mb MRAM demonstrator chip

TL;DR: This paper reviews the remarkable developments of the magnetic tunnel junction over the last decade and in particular, work aimed at demonstrating its potential for a dense, fast, and nonvolatile random access memory.
Journal ArticleDOI

Spin-polarized quasiparticle injection devices using Au/YBa2Cu3O7/LaAlO3/Nd0.7Sr0.3MnO3 heterostructures

TL;DR: In this article, the effect of injection of spin-polarized quasiparticles from a ferromagnetic gate layer was compared to that of unpolarized ones from a nonmagnetic metallic gate.
Journal ArticleDOI

TOPICAL REVIEW: High-? transistors

J. Mannhart
Journal ArticleDOI

Experimental considerations in the quest for a thin-film superconducting field-effect transistor

TL;DR: In this paper, a thin-film In/InO x superconductor separated from an Al gate electrode by an overgrown dielectric was studied to ascertain the feasibility of electric-field control of superconductivity for device applications.
Journal ArticleDOI

Superconducting-Ferromagnetic Transistor

TL;DR: In this article, the dc and ac characterization of multiterminal superconducting-ferromagnetic transistors (SFTs) was investigated, where S, I, and F denote a superconductor, an insulator, and a ferromagnetic material.
References
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Journal ArticleDOI

Design of ion-implanted MOSFET's with very small physical dimensions

TL;DR: This paper considers the design, fabrication, and characterization of very small Mosfet switching devices suitable for digital integrated circuits, using dimensions of the order of 1 /spl mu/.
Journal ArticleDOI

Measurement of Recombination Lifetimes in Superconductors

TL;DR: In this article, the experimentally measured quasiparticle recombination lifetime in a superconductor is not the same as the previously calculated theoretical lifetime, and a simple expression relating the two is derived.
Journal ArticleDOI

Placement and average interconnection lengths of computer logic

TL;DR: In this article, an upper bound on expected average interconnection length, based on partitioning results, is given for linear and square arrays of gates, which gives significantly lower interconnection lengths than the bound based upon random placement.
Journal ArticleDOI

Very small MOSFET's for low-temperature operation

TL;DR: In this article, the improvements in the device characteristics of n-channel MOSFET's that occur at low temperatures are considered. Butler et al. presented a device design for an enhancement mode FET with a channel length of I µm that is suitable for operation at liquid nitrogen temperature.
Journal ArticleDOI

Picosecond pulses on superconducting striplines

TL;DR: In this article, the attenuation and phase velocity of a superconducting thin-film stripline are calculated at high frequencies using the theory of Mattis and Bardeen, and the results are used to study the propagation of picosecond pulses which have frequency components approaching the super-conducting energy gap frequency.
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Who is the only person to win the Nobel Prize for physics twice once for inventing the transistor and the other time for the theory of superconductivity?

We conclude that the potentially very rewarding search for a transistor compatible with superconductivity in high performance applications must be in new directions.