Journal ArticleDOI
Threshold voltage theory for a short-channel MOSFET using a surface-potential distribution model
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TLDR
In this paper, a detailed expression of the threshold voltage for a short-channel MOSFET is derived from a model of surfacepotential distribution under the gate using a relationship of surface-channel charge neutrality.Abstract:
A detailed expression of the threshold voltage for a short-channel MOSFET is derived from a model of surface-potential distribution under the gate using a relationship of surface-channel charge neutrality. The theory is compared with the measured threshold voltages. The theoretical curves for threshold voltage over a wide range of drain and backgate voltage are in good agreement with experimental results. It is shown for a MOSFET having a channel length less than 2 μm that the body-bias constant increases as the drain voltage increases. The theory also predicts that the increase in backgate voltage leads to the reduction in short-channel effect for the shorter-channel case.read more
Citations
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Journal ArticleDOI
Review and Critique of Analytic Models of MOSFET Short-Channel Effects in Subthreshold
TL;DR: In this article, the authors survey, review, and critique analytic models of MOSFET short-channel effects (SCEs) in sub-threshold published over the past four decades.
Journal ArticleDOI
Threshold voltage models of short, narrow and small geometry MOSFET's: A review
Lex A. Akers,J.J. Sanchez +1 more
TL;DR: In this article, a review of various modeling techniques developed to determine the threshold voltage as a function of device geometry is presented, and it is hoped this review will provide insights for the development of new models for today's small devices.
Journal ArticleDOI
Analytical model and characterization of small geometry MOSFET's
T. Yamaguchi,S. Morimoto +1 more
TL;DR: In this article, a comparison of the electrical characteristics of small geometry p-channel and n-channel MOSFET's with and without field implantation leads to the conclusion that the field implantations is the main cause of the narrow-channel-width effect on threshold voltage, threshold-voltage increase and drain current degradation.
Journal ArticleDOI
Threshold-sensitivity minimization of short-channel MOSFET's by computer simulation
TL;DR: In this article, an approach to reduce short-channel effects in small-dimension MOSFET's, with emphasis focused on the geometrical channel structure along a gate, is described.
Journal ArticleDOI
Quantum mechanical influences on short-channel effects in ultra-thin MOSFET/SIMOX devices
Yasuhisa Omura,Katsutoshi Izumi +1 more
TL;DR: In this paper, an explicit manifestation of quantum-mechanical influences on the short channel effects (SCE) in the threshold voltage of ultra-thin buried-channel MOSFET/SIMOX devices is described.
References
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Journal ArticleDOI
A simple theory to predict the threshold voltage of short-channel IGFET's
TL;DR: A simple expression for the threshold voltage of an IGFET is derived from a charge conservation principle which geometrically takes into account two-dimensional edge effects in this paper, which is valid for short and long-channel lengths.
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An analysis of the threshold voltage for short-channel IGFET's
TL;DR: In this article, the authors derived a closed-form threshold voltage equation for short-channel insulated-gate field-effect transistors (IGFETs) operating with source-to-substrate reverse bias.
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A simple approach for accurately modeling the threshold voltage of short-channel mosts
TL;DR: In this paper, the effects of the source and drain depletion regions on the energy band configuration and the effective depletion layer charge under the channel were modeled for short channel effects in MOS transistors.
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Drain-voltage dependence of IGFET turn-on voltage
TL;DR: In this article, the turn-on voltage of an enhancement-type field effect transistor (IGFET) is analyzed based on a simple model, which assumes a reduction of gate-induced bulk charge under the influence of the drain voltage.