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Topological acoustics

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TLDR
In this paper , the authors survey the fundamental mechanisms, basic designs and practical realizations of topological phases in acoustic systems and provide an overview of future directions and potential applications for topological acoustic systems.
Abstract
Topological acoustics is an emerging field that lies at the intersection of condensed matter physics, mechanical structural design and acoustics engineering. It explores the design and construction of novel artificial structures, such as acoustic metamaterials and phononic crystals, to manipulate sound waves robustly, taking advantage of topological protection. Early work on topological acoustics was limited to duplicating topological phases that have been understood in condensed matter systems, but recent advances have shifted to exploring new topological concepts that are difficult to realize in other physical systems, such as various topological semimetal phases, and topological phases associated with Floquet engineering, fragile topology, non-Hermiticity and synthetic dimensions. These developments demonstrate the unique advantages of topological acoustic systems and their role in developing topological physics. In this Review, we survey the fundamental mechanisms, basic designs and practical realizations of topological phases in acoustic systems and provide an overview of future directions and potential applications. The introduction of topology into acoustic platforms enables robust sound control. This Review discusses the fundamental mechanisms, basic designs, practical realizations and promising future directions for topological acoustic systems.

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Transient non-Hermitian skin effect

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Topological phonons in Cs-Te binary systems

TL;DR: In this article , the authors used symmetry analysis and first-principles calculations to discover seven Cs-Te binary systems that have different crystal structures and can host symmetry-enforced topologically nontrivial phonons.
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Classification of time-reversal-invariant crystals with gauge structures

TL;DR: In this paper , a unified theory for projective symmetry algebras of time-reversal-invariant crystals is established by exhaustively classifying and representing all 458 projective symmetries of time invariant crystals from 17 wallpaper groups in two dimensions.
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Optimal design of topological waveguides by machine learning

TL;DR: In this article , artificial neural networks (ANN) are trained to predict the topological property and the bounds of nontrivial bandgaps, and a mathematical formulation for designing optimal mechanical topological waveguides with a large working bandwidth and highly localized interface mode is presented.
References
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Journal ArticleDOI

Colloquium: Topological insulators

TL;DR: In this paper, the theoretical foundation for topological insulators and superconductors is reviewed and recent experiments are described in which the signatures of topologically insulators have been observed.
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Topological insulators and superconductors

TL;DR: Topological superconductors are new states of quantum matter which cannot be adiabatically connected to conventional insulators and semiconductors and are characterized by a full insulating gap in the bulk and gapless edge or surface states which are protected by time reversal symmetry.
Journal ArticleDOI

Quantal phase factors accompanying adiabatic changes

TL;DR: In this article, it was shown that the Aharonov-Bohm effect can be interpreted as a geometrical phase factor and a general formula for γ(C) was derived in terms of the spectrum and eigen states of the Hamiltonian over a surface spanning C.
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Quantum spin Hall effect in graphene

TL;DR: Graphene is converted from an ideal two-dimensional semimetallic state to a quantum spin Hall insulator and the spin and charge conductances in these edge states are calculated and the effects of temperature, chemical potential, Rashba coupling, disorder, and symmetry breaking fields are discussed.
Journal ArticleDOI

New Method for High-Accuracy Determination of the Fine-Structure Constant Based on Quantized Hall Resistance

TL;DR: In this article, the Hall voltage of a two-dimensional electron gas, realized with a silicon metal-oxide-semiconductor field effect transistor, was measured and it was shown that the Hall resistance at particular, experimentally well-defined surface carrier concentrations has fixed values which depend only on the fine-structure constant and speed of light, and is insensitive to the geometry of the device.
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