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Journal ArticleDOI

Transparent and conductive multicomponent oxide films prepared by magnetron sputtering

Tadatsugu Minami
- 07 Jul 1999 - 
- Vol. 17, Iss: 4, pp 1765-1772
TLDR
Transparent conducting oxide (TCO) films were prepared in multicomponent oxides composed of ZnO, SnO2, GaInO3, or MgO combined with In2O3 or ZnCo combined with SnCo as mentioned in this paper.
Abstract
Transparent and conductive thin films of multicomponent oxides composed of binary and/or ternary compounds with varied chemical compositions have been prepared by rf or dc magnetron sputtering. Transparent conducting oxide (TCO) films were prepared in multicomponent oxides composed of ZnO, SnO2, Ga2O3, or MgO combined with In2O3 or ZnO combined with SnO2, containing ternary compounds such as Zn2In2O5, In4Sn3O12, GaInO3, MgIn2O4, and ZnSnO3. In addition, the TCO films were prepared in a multicomponent oxide composed of combinations of these ternary compounds. In particular, the Zn2In2O5 and In4Sn3O12 films exhibited a resistivity of 2×10−4 Ω cm, comparable to that of indium–tin–oxide films. TCO films could always be obtained in multicomponent oxides consisting of combinations of metal oxides as long as these oxides were TCO film materials or transparent conductors; the mixture ratio of the components could be varied over all possible compositions. The electrical, optical, and chemical properties, the band-...

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Citations
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Journal ArticleDOI

Transparent conducting oxide semiconductors for transparent electrodes

TL;DR: The present status and prospects for further development of polycrystalline or amorphous transparent conducting oxide (TCO) semiconductors used for practical thin-film transparent electrode applications are presented in this paper.
Journal ArticleDOI

New Benchmark for Water Photooxidation by Nanostructured α-Fe2O3 Films

TL;DR: In this article, thin films of silicon-doped Fe2O3 were deposited by APCVD (atmospheric pressure chemical vapor deposition) from Fe(CO)5 and TEOS (tetraethoxysilane) on SnO2-coated glass at 415 °C.
Patent

Amorphous oxide and thin film transistor

TL;DR: In this paper, an amorphous oxide and a thin-film transistor were constructed using an electron carrier concentration less than 10 18 /cm 3, where the electron carrier was obtained by using a gate electrode and gate insulating film.
Journal ArticleDOI

New n-Type Transparent Conducting Oxides

Tadatsugu Minami
- 01 Aug 2000 - 
TL;DR: In this article, a transparent conducting oxide (TCO) thin film composed of binary compounds such as SnO2 and In2O3 was developed by means of chemical-and physical-deposition methods.
Journal ArticleDOI

Present status of transparent conducting oxide thin-film development for Indium-Tin-Oxide (ITO) substitutes

TL;DR: In this article, the present status and prospects for further development of transparent conducting oxide materials for use as Indium-Tin-Oxide (ITO) substitutes in the thin-film transparent electrodes of liquid crystal displays (LCDs), currently the largest use of ITO, and thus, of indium.
References
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Journal ArticleDOI

Transparent conductors—A status review

TL;DR: In this paper, the authors present a comprehensive and up-to-date description of the deposition techniques, electro-optical properties, solid state physics of the electron transport and optical effects and some applications of these transparent conductors.
Journal ArticleDOI

Band-gap widening in heavily Sn-doped In 2 O 3

TL;DR: In this article, the optical properties of evaporated films of doped semiconducting In2O3 in the 2-6eV range were investigated, i.e., around the fundamental bandgap.
Journal ArticleDOI

Group III Impurity Doped Zinc Oxide Thin Films Prepared by RF Magnetron Sputtering

TL;DR: In this paper, a detailed study of electrical properties in group III impurity doped ZnO thin films prepared by rf magnetron sputtering is described, and it is shown that the resistivity dependence on film thickness below 300 nm.
Journal ArticleDOI

Highly Conductive and Transparent Aluminum Doped Zinc Oxide Thin Films Prepared by RF Magnetron Sputtering

TL;DR: In this paper, high conductive films of Al-doped ZnO have been prepared by rf magnetron sputtering of a znO target with Al2O3 dopant of 1-2 wt% in content added.
Journal ArticleDOI

Semiconducting transparent thin films: their properties and applications

TL;DR: The state of the art of transparent, electrically conducting films, with special reference to In2O3, SnO2 and Cd2SnO4, has been reviewed in this paper.
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