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Unconventional quantum Hall effect and Berry’s phase of 2π in bilayer graphene

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TLDR
In this paper, a third type of integer quantum Hall effect is reported in bilayer graphene, where charge carriers have a parabolic energy spectrum but are chiral and show Berry's phase 2π affecting their quantum dynamics.
Abstract
There are two known distinct types of the integer quantum Hall effect. One is the conventional quantum Hall effect, characteristic of two-dimensional semiconductor systems1,2, and the other is its relativistic counterpart observed in graphene, where charge carriers mimic Dirac fermions characterized by Berry’s phase π, which results in shifted positions of the Hall plateaus3,4,5,6,7,8,9. Here we report a third type of the integer quantum Hall effect. Charge carriers in bilayer graphene have a parabolic energy spectrum but are chiral and show Berry’s phase 2π affecting their quantum dynamics. The Landau quantization of these fermions results in plateaus in Hall conductivity at standard integer positions, but the last (zero-level) plateau is missing. The zero-level anomaly is accompanied by metallic conductivity in the limit of low concentrations and high magnetic fields, in stark contrast to the conventional, insulating behaviour in this regime. The revealed chiral fermions have no known analogues and present an intriguing case for quantum-mechanical studies.

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First-principles calculations of the electronic properties of SiC-based bilayer and trilayer heterostructures

TL;DR: The results show that graphene and MoS2 can tune and improve the electronic performance ofSiC and demonstrate the promising application of SiC-based heterostructures for nanoelectronics and nanophotonics.
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Large bandgap of pressurized trilayer graphene.

TL;DR: A microwiring technique for high-pressure electrical measurement on nanomaterials with only a few layers is developed and it is demonstrated that an intrinsic bandgap of 2.5 eV is achievable in compressed Bernal-stacked trilayer graphene.
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Spin current generation by adiabatic pumping in monolayer graphene

TL;DR: In this article, a method of generating spin currents in monolayer graphene through adiabatic quantum pumping by two oscillating potentials is proposed, which is useful in the development of graphene spintronics.
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Properties and applications of new superlattice: twisted bilayer graphene

TL;DR: In this article, a review of the properties and recent applications of superlattice based on twisted bilayer graphene (TwBLG) is presented, where the lattice of the upper and lower layers is twisted.
References
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Journal ArticleDOI

Electric Field Effect in Atomically Thin Carbon Films

TL;DR: Monocrystalline graphitic films are found to be a two-dimensional semimetal with a tiny overlap between valence and conductance bands and they exhibit a strong ambipolar electric field effect.
Journal ArticleDOI

Two-dimensional gas of massless Dirac fermions in graphene

TL;DR: This study reports an experimental study of a condensed-matter system (graphene, a single atomic layer of carbon) in which electron transport is essentially governed by Dirac's (relativistic) equation and reveals a variety of unusual phenomena that are characteristic of two-dimensional Dirac fermions.
Journal ArticleDOI

Experimental observation of the quantum Hall effect and Berry's phase in graphene

TL;DR: In this paper, an experimental investigation of magneto-transport in a high-mobility single layer of Graphene is presented, where an unusual half-integer quantum Hall effect for both electron and hole carriers in graphene is observed.
Journal ArticleDOI

Two-dimensional atomic crystals

TL;DR: By using micromechanical cleavage, a variety of 2D crystals including single layers of boron nitride, graphite, several dichalcogenides, and complex oxides are prepared and studied.
Journal Article

Experimental Observation of Quantum Hall Effect and Berry's Phase in Graphene

TL;DR: An experimental investigation of magneto-transport in a high-mobility single layer of graphene observes an unusual half-integer quantum Hall effect for both electron and hole carriers in graphene.
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