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How many transistors does a Snapdragon 865 have? 

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The proposed structures reduce the number of the transistors considerably and have very high driving capability.
Consequently, their design is important for a good thermal behavior and reliability of the transistors.
They seem to have the best parameters among currently known polymorphic gates based on conventional transistors.
This solves the electromigration concerns that have previously limited the current capability of lateral GaN transistors.
Our findings paint a picture of BTI and TDDB that in many respects is similar to that of Si transistors but with some unique characteristics.
Journal ArticleDOI
Qin Zhang, Wei Zhao, Alan Seabaugh 
555 Citations
This formula is consistent with two recent reports of interband tunnel transistors, which show lower than 60-mV/dec subthreshold swings and provides two simple design principles for configuring these transistors.
Using new chip architectures built on leading 7-nm process technology, the Snapdragon 855 will offer users long-lasting battery life and enhanced experiences in such areas as imaging, audio, gaming, and extended reality.
Emerging device structures, such as, vertical transistors and multichannel superjunction transistors, have the potential to overcome some of those limitations, thereby bringing the performance benefits of the GaN power switching technology to a new level.