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How many transistors are in the Iphone 13 Pro Max?

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Journal Article•DOI Large-area WSe2 electric double layer transistors on a plastic substrate Kazuma Funahashi, Jiang Pu, Ming-Yang Li, Lain-Jong Li, Yoshihiro Iwasa, Yoshihiro Iwasa, Taishi Takenobu - Show less +6 more 01 Jun 2015-Japanese Journal of Applied Physics 14 Citations	These transistors exhibited ambipolar operation and an ON/OFF current ratio of ~104, demonstrating chemically grown WSe2 transistors on plastic substrates for the first time.
Journal Article•DOI InP/InGaAs double-heterojunction bipolar transistors grown on [100] Si by metalorganic chemical vapor deposition Toshiki Makimoto, Kenji Kurishima, T. Kobayashi, T. Ishibashi - Show less +3 more 01 Jul 1991-IEEE Electron Device Letters 16 Citations	The transistors exhibit high current gains over 200, which is comparable to those in transistors grown on InP substrates.
Journal Article•DOI Very high-mobility organic single-crystal transistors with in-crystal conduction channels Jun Takeya, Masakazu Yamagishi, Y. Tominari, R. Hirahara, Yasuhiro Nakazawa, Takeshi Nishikawa, T. Kawase, Tatsuya Shimoda, S. Ogawa - Show less +8 more 09 Mar 2007-Applied Physics Letters 666 Citations	These are the highest values ever reported for organic transistors.
Journal Article•DOI Vertical organic transistors. Björn Lüssem, Alrun A. Günther, Axel Fischer, Daniel Kasemann, Karl Leo - Show less +4 more 14 Oct 2015-Journal of Physics: Condensed Matter 69 Citations	Vertical Organic Transistors are a novel technology that has the potential to overcome these limitations of OFETs.
Proceedings Article•DOI Stacked gate dielectrics with TaO for future CMOS technologies I.C. Kizilyaili, P.K. Roy, Frieder H. Baumann, R.Y. Huang, D. Hwang, C. Chacon, R. Irwin, Y. Ma, G. Alers - Show less +8 more 09 Jun 1998 26 Citations	The fabricated transistors exhibit excellent I-V characteristics.
Journal Article•DOI Room Temperature Hot Electron Transistors with InAs-Notched Resonant-Tunneling-Diode Injector Alan Seabaugh, Yung-Chung Kao, John N. Randall, William R. Frensley, Ali Khatibzadeh - Show less +4 more 15 May 1991-Japanese Journal of Applied Physics 36 Citations	To our knowledge these are the first In(GaAl)As hot electron transistors to exhibit 300 K gain of this magnitude.
Journal Article•DOI Pushing the Performance Limit of Sub-100 nm Molybdenum Disulfide Transistors. Yuan Liu, Jian Guo, Yecun Wu, Enbo Zhu, Nathan O. Weiss, Qiyuan He, Hao Wu, Hung-Chieh Cheng, Yang Xu, Imran Shakir, Yu Huang, Xiangfeng Duan - Show less +11 more 08 Sep 2016-Nano Letters 110 Citations	Our study, for the first time, demonstrates that the 2DSC transistors can offer comparable performance to the 2017 target for silicon transistors in International Technology Roadmap for Semiconductors (ITRS), marking an important milestone in 2DSC electronics.
Journal Article•DOI Experimental Comparison Between Sub-0.1- $\mu{\hbox{m}}$ Ultrathin SOI Single- and Double-Gate MOSFETs: Performance and Mobility Julie Widiez, Thierry Poiroux, M. Vinet, M. Mouis, Simon Deleonibus - Show less +4 more 01 Nov 2006-IEEE Transactions on Nanotechnology 27 Citations	Good mobility values are obtained for both architectures and we show the advantages of ultrathin body devices over bulk transistors.
Journal Article•DOI Wide-Range Threshold Voltage Controllable Silicon on Thin Buried Oxide Integrated with Bulk Complementary Metal Oxide Semiconductor Featuring Fully Silicided NiSi Gate Electrode Takashi Ishigaki, Ryuta Tsuchiya, Yusuke Morita, Nobuyuki Sugii, Shinichiro Kimura, Toshiaki Iwamatsu, Takashi Ipposhi, Y. Inoue, Toshiro Hiramoto - Show less +8 more 25 Apr 2008-Japanese Journal of Applied Physics 19 Citations	We have also shown that the characteristics of the integrated hybrid bulk transistor are comparable to those of conventional bulk transistors.

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