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Cooking and lighting equipments are major cause of burn injury among females and young age group.
Even if the amount of generated damage is slightly larger than what eAectively influences the transistor characteristics, the parameter insensitivity to given at high temperature improves the transistor reliability.
Such a catastrophic phenomenon is highly sensitive to the initial operation condition, as well as transistor gate length.
We conclude that thermal aware transistor design can suppress self-heating without compromising performance and electrostatic control of the transistor.
The reported fall-off of the piezoresistive response of the transistor in short channel devices is shown to be the result of parasitic series resistance in the source of the transistor.
The amorphous transistor materials can support such large strains because they lack a mechanism for dislocation motion.
This technique enables us to investigate the role of defects in transistor performance.
The obtained results show that it is possible to corrupt a single transistor in a semi-permanent state.