Showing papers on "Bismuth published in 1995"
Book•
08 Jun 1995
TL;DR: In this article, the authors present a general assessment of hydrogen generation and atomization methods and apply them to a variety of applications in chemistry, biology, and computer science, including artificial intelligence.
Abstract: FUNDAMENTALS AND GENERAL APPROACHES. Theory. Hydride Generation. Hydride Atomization. Interferences. General Assessment of Hydride Generation and Atomization Methods. Other Volatile Compounds. METHODOLOGY AND ANALYTICAL APPLICATIONS. Antimony. Arsenic. Bismuth. Germanium. Indium. Lead. Selenium. Tellurium. Thallium. Tin. Appendices. Bibliography. Index.
472 citations
TL;DR: Ferroelectric thin films of bismuth layer structured compounds, such as SrBi2Ta2O9, SrBiNb2O 9 and SrBi4Ti4O15, were formed onto a sputtered platinum layer on a silicon substrate using spin-on technique and metal-organic decomposition (MOD) method X-ray diffraction (XRD) analysis and some electrical measurements were performed on the prepared thin films as mentioned in this paper.
Abstract: Ferroelectric thin films of bismuth layer structured compounds, SrBi2Ta2O9, SrBi2Nb2O9, SrBi4Ti4O15 and their solid solutions, were formed onto a sputtered platinum layer on a silicon substrate using spin-on technique and metal-organic decomposition (MOD) method X-ray diffraction (XRD) analysis and some electrical measurements were performed on the prepared thin films XRD results of SrBi2(Ta1-x , Nbx )2O9 films (0?x?1) showed that niobium ions substitute for tantalum ions in an arbitrary ratio without any change of the layer structure and lattice constants Furthermore, XRD results of SrBi2x Ta2O9 films (0?x?15) indicated that the formation of the bismuth layer structure does not always require an accurate bismuth content The layer structure was formed above 50% of the stoichiometric bismuth content in the general formula SrBi2(Ta1-x , Nbx )2O9 films with various Ta/Nb ratios have large enough remanent polarization for nonvolatile memory application and have shown high fatigue resistance against 1011 cycles of full switching of the remanent polarization Mixture films of the three compounds were also investigated
228 citations
TL;DR: In this article, it was shown that bismuth atoms are selectively and homogeneously deposited on the palladium particles by a surface redox reaction on Pd/C catalysts containing 1-to 2-nm Pd particles.
225 citations
TL;DR: In this article, a series of thin-film bismuth layer structured ferroelectric (BLSF) materials such as SrBi2Ta2O9, SrBiNb2O 9, and SrBi4Ti4O15 were developed using metallo-organic-decomposition (MOD) spin-on coating techniques.
Abstract: We have developed the series of thin-film bismuth layer structured ferroelectric (BLSF) materials such as SrBi2Ta2O9, SrBi2Nb2O9, SrBi4Ti4O15 and their solid solutions using metallo-organic-decomposition (MOD) spin-on coating techniques. We found that SrBi2Ta2O9 is one of the best potential candidate materials for ferroelectric nonvolatile memories. The SrBi2Ta2O9 thin-film capacitor had the remanent polarization (P r+-P r-) of 20 µ C/cm2, coercive field of 35 kV/cm and dielectric constant of 250. SrBi2Ta2O9 thin film on platinum electrode has fatigue-free characteristics for up to 2×1011 cycles without requiring any complicated electrode system such as conductive oxide. Moreover, SrBi2Ta2O9 thin film has many advantages, e.g., high signal/noise ratio of 8 at 1.2 V, low-voltage operation at as low as 1 V, long data-retention, little surface effect, superior imprint properties and low leakage current. We considered that these advantages are due to (1) less space charge and (2) the inherent domain motion.
189 citations
TL;DR: In this paper, the authors obtained very long relaxation times T 1 of up to 120 h for the nuclear polarization of an optically pumped helium 3 gas, where the glass containers were internally coated with metallic films such as bismuth or cesium.
113 citations
TL;DR: In this paper, the authors describe micromachined IR thermopiles based on polysilicon and aluminium for the contactless measurement of surface temperature, which shows high detectivity and very small temperature dependence of responsivity.
Abstract: Unlike the 'classical' thermoelectric materials bismuth and antimony, the sensor material silicon allows a good compatibility to CMOS-standard IC processes. This paper describes micromachined IR thermopiles based on polysilicon and aluminium for the contactless measurement of surface temperature. The sensor performance shows high detectivity and very small temperature dependence of responsivity.
109 citations
TL;DR: In this article, the bismuth tellurohalides BiTeCI (prepared for the first time), BiTeBr, and BiTeI were refined based on X-ray powder diffraction data using a full profile Rietveld method.
108 citations
TL;DR: In this article, the distribution coefficients of rare-earth elements (Y, La, Ce, Pr, Nd, Sm, Eu and Gd) between liquid cadmium or bismuth and liquid LiCl-KCI eutectic salt were measured at 773 K.
90 citations
TL;DR: A single crystal of bismuth tri-iodide (BiI{sub 3}) of dimensions 1.2 {times} 1.4 cm{sup 3} has been grown by physical vapor transport as discussed by the authors.
89 citations
TL;DR: It has been observed that stable glasses with nearly the same topology can be obtained in this system for a larger composition range compared to the multicomponent bismuth cuprate glasses.
Abstract: The glass structure and physical properties are reported for the nonconventional binary bismuth cuprate glasses of compositions (CuO) x (Bi 2 O 3 ) 100-x , for x=27-70 mol %, prepared by the roller-quenching technique. It has been observed that stable glasses with nearly the same topology can be obtained in this system for a larger composition range compared to the multicomponent bismuth cuprate glasses. The network structure is built up of [BiO 3 ] pyramidal units. The strength and connectivity of the glassy network increase at nearly equimolar glass composition. The nearly equimolar glass composition crystallizes to tetragonal Bi 2 CuO 4 crystal. The appearance of hyperfine structure in the ESR line shapes for the glass compositions with high CuO content is not clear at this moment.
86 citations
TL;DR: In this paper, a new mixed valent bismuth oxide, Bi3+Bi5+O4, was prepared by a low temperature hydrothermal reaction using a hydrated sodium bistech oxide, NaBiO3 · nH2O, as a starting material.
TL;DR: In this article, a study was made of thiourea as an agent for the pre-reduction and masking of interferences in the multi-element determination of arsenic, antimony, bismuth, selenium and tellurium by hydride generation inductively coupled plasma atomic emission spectrometry.
Abstract: A study was made of thiourea as an agent for the pre-reduction and masking of interferences in the multi-element determination of arsenic, antimony, bismuth, selenium and tellurium by hydride generation inductively coupled plasma atomic emission spectrometry. Thiourea reduces arsenic and antimony from the pentavalent to the trivalent state, without preventing the determination of tetravalent selenium and tellurium. Thiourea also eliminates the interference from a number of metals in the determination of arsenic, antimony and bismuth, but it is not effective for selenium and tellurium.
Patent•
05 May 1995TL;DR: In this paper, a ferroelectric strontium-bismuth-tantalate (SBT) film is formed using two sputtering targets: the first sputtering target is comprised primarily of bismuth oxide (Bi2 O3) and the second sputtering source is comprised mainly of SBT.
Abstract: A semiconductor manufacturing method is directed to forming a ferroelectric film, and in particular a ferroelectric film of the bismuth layer structure type, that has a significant component of reversible polarization perpendicular to the plane of the electrodes. The manufacturing method is conducted at low temperatures on commercially suitable electrodes and is compatible with conventional CMOS fabrication techniques. A ferroelectric strontium-bismuth-tantalate ("SBT") film is formed using two sputtering targets. A first sputtering target is comprised primarily of bismuth oxide (Bi2 O3) and a second sputtering target is comprised primarily of SBT. An initial layer of bismuth oxide is formed on the bottom electrode of a ferroelectric capacitor stack. The initial layer of bismuth oxide is directly followed by a sputtered layer of SBT. A second layer of bismuth oxide is then applied and the layers are alternated in a "layer cake" fashion containing a plurality of layers until a desired thickness of the film is attained. At the end of the deposition, a crystallization anneal is performed to make the film ferroelectric. Once the ferroelectric film is in place, the top electrode is formed and the remaining processing steps are completed.
TL;DR: The phase diagram and thermodynamics data of the Bi-O system are reviewed and assessed in this paper, where an optimized consistent thermodynamic description of the system at 1 bar total pressure is presented.
Abstract: The phase diagram and thermodynamics data of the Bi-O system are reviewed and assessed. An optimized consistent thermodynamic description of the system at 1 bar total pressure is presented. The stable solid phases (solid Bi, α-Bi2O3, and δ-Bi2O3) are all treated as stoichiometric. The liquid phase is described by an ionic two-sublattice model, and the gas phase is treated as an ideal solution. Calculated phase diagrams and values for the thermodynamic properties of the bismuth oxides and the liquid are shown and compared with experimental data.
TL;DR: The chemical and electronic interface phenomena in doped ZnO ceramics are described in this paper, where it is shown that monoatomic layers of excess bismuth and oxygen at the grain boundaries are responsible for the electrical activity of the interfaces.
Patent•
07 Jun 1995TL;DR: In this paper, a precursor liquid comprising several metal 2-ethylhexanoates, such as strontium, tantalum, and bismuth, in a xylenes/methyl ethyl ketone solvent is prepared, and deposited on a substrate.
Abstract: A precursor liquid comprising several metal 2-ethylhexanoates, such as strontium, tantalum, and bismuth 2-ethylhexanoates, in a xylenes/methyl ethyl ketone solvent is prepared, and deposited on a substrate. In one embodiement the substrate is placed within a vacuum deposition chamber, the precursor liquid is misted, and the mist is flowed into the deposition chamber while maintaining the chamber at ambient temperature to deposit the precursor liquid on the substrate. In another embodiment, the precursor is spin-coated on the substrate. The liquid is dried, baked, and annealed to form a thin film of a layered superlattice material, such as strontium bismuth tantalate, on the substrate.
TL;DR: In this paper, the stacking order of BiI 3 layers is discussed and the bismuth atoms are shifted about 4 pm along the c axis out of the centres of the octahedral sites.
Abstract: Bismuth triiodide free of stacking faults was obtained by synthesis from the elements and sublimation in quartz tubes. X-ray investigations using a twinned crystal (space group R3 (No. 148), a = 752.49(3) pm, c = 2073.3(1) pm, V = 1016.7(2). 10 6 pm 3 ) confirmed the rhombohedral stacking sequence of BiI 3 layers. The bismuth atoms are shifted about 4 pm along the c axis out of the centres of the octahedral sites. The stacking order of BiI 3 layers is discussed.
Patent•
22 Mar 1995TL;DR: A thin-film zinc oxide varistor for use in integrated circuits and the like is produced by applying a polyoxyalkylated metal complex, such as a metal alkoxycarboxylate, to a substrate (12, 14, and 16) for the formation of a dried non-ohmic layer (18).
Abstract: A thin-film zinc oxide varistor (10) for use in integrated circuits and the like is produced by applying a polyoxyalkylated metal complex, such as a metal alkoxycarboxylate, to a substrate (12, 14, and 16) for the formation of a dried nonohmic layer (18). The method of production includes the steps of providing a substrate and a precursor solution including a polyoxyalkylated zinc complex (P22, P24), coating a portion of the substrate with the precursor solution (P26), drying the coated substrate (P32), and crystallizing the dried thin-film zinc oxide layer (P30). The resultant crystalline zinc oxide varistor layer (18) may be doped with bismuth, yttrium, praseodymium, cobalt, antimony, manganese, silicon, chromium, titanium, potassium, dysprosium, cesium, cerium, and iron to provide a non-ohmic varistor. The varistor layer (10) is annealed at a temperature ranging from about 400 to about 1000° C. to provide a layer having a thickness ranging from about 50 nanometers to about 500 nanometers and an average grain size diameter less than about 200 nanometers.
TL;DR: In this paper, the luminescence intensity of Bi 3+ in Y 2 O 3 decreases not only on increasing but also on decreasing the temperature, and the nature of the nonradiative process is discussed.
TL;DR: The BiO3 (BKBO) superconductor is cubic with a coherence length of 30-60 A. The basic properties of this compound are reviewed in this paper.
Abstract: Ba1−x
K x
BiO3(BKBO) has aT
c
(onset) of 34 K. It is the highest-temperature oxide superconductor which is cubic, with a coherence length of 30–60 A. The basic properties of this compound are reviewed.
TL;DR: In this paper, the general formula of a phase relation between well-known bismuth layer-structured ferroelectrics (BLSF) such as Bi3TiNbO9, Na0.5Bi2.5, Bi4Ti3O12, and Na 0.5 Bi4.5Ti4O15 including perovskite compounds was discussed to form the layer structure with the numbers m=3, 4 and 5 of layer.
Abstract: The general formula of a phase relation between well-known bismuth layer-structured ferroelectrics (BLSF) such as Bi3TiNbO9, Na0.5Bi2.5Nb2O9, Bi4Ti3O12, and Na0.5Bi4.5Ti4O15 including perovskite compounds (Bi0.5Na0.5) TiO3 and NaNbO3, that is, Na(m-3+x)/2 Bi(m+5-x)/2 Tim-x Nbx O3m+3 (2≤m≤5), was discussed to form the layer structure with the numbers m=3, 4 and 5 of layer, where x is the number of Nb ions in the layer structure and 1≤x≤2 for m=2 and 0≤x≤m for 3≤m≤5. A new BLSF series is found for m=3 and x=1, 2 and 3. The ferroelectricity for m=4 (x=3 and 4) was very weak and no single phase with m=5 was obtained.
Patent•
28 Feb 1995TL;DR: In this article, an electrochemical sensor for determining the oxygen concentration in gas mixtures is proposed, which has a solid electrolyte (10) with oxygen ionic conductivity, and a measuring electrode (11) that does not catalyze establishment of equilibrium of the gas mixture and is exposed to the mixture.
Abstract: An electrochemical sensor for determining the oxygen concentration in gas mixtures is proposed. The sensor has a solid electrolyte (10) with oxygen ionic conductivity, which has a measuring electrode (11) that does not catalyze establishment of equilibrium of the gas mixture and is exposed to the gas mixture. The measuring electrode (11) contains platinum and bismuth. The effect of these materials is that the free oxygen contained in the gas mixture is preferentially adsorbed, without reacting with the other gas components such as CO and HC.
TL;DR: In this article, the optical phonon modes have been studied by Raman spectroscopy in bismuth layer-structure oxides ABi 4 Ti 4 O 15 (ABa, Ca, Pb, Sr).
TL;DR: In this paper, the synthesis of a range of bismuth(III) arenethiolates and a thiolato anion are described together with two X-ray crystal structure determinations of SC6F5 derivatives.
Patent•
07 Jun 1995
TL;DR: A plumber's fittings can be fabricated from a bismuth and mischmetal containing copper alloy as mentioned in this paper, which is a type of pipe fittings used for indoor plumbing.
Abstract: A plumbing fixture or fitting fabricated from a bismuth and mischmetal containing copper alloy.
TL;DR: In this paper, a low temperature technique based on a slow coprecipitation in acidic medium in the presence of KMnO4 and a bismuth (III) salt is applied, leading to amorphous MnO2 forms.
TL;DR: Ising model simulations of the growth of alloys which predict quite different behavior near and far from equilibrium are reported, where concentrations of solute, which are far in excess of the equilibriumconcentrations, are observed in the crystal after rapid crystallization.
Abstract: In this Letter we report Ising model simulations of the growth of alloys which predict quite different behavior near and far from equilibrium. Our simulations reproduce the phenomenon which has been termed 'solute trapping,' where concentrations of solute, which are far in excess of the equilibrium concentrations, are observed in the crystal after rapid crystallization. This phenomenon plays an important role in many processes which involve first order phase changes which take place under conditions far from equilibrium. The underlying physical basis for it has not been understood, but these Monte Carlo simulations provide a powerful means for investigating it.