Showing papers on "Chemical bath deposition published in 2009"
TL;DR: In this article, a CZTS-based solar cell was prepared entirely by non-vacuum deposition techniques on soda lime glass (SLG) substrates, and the best solar cell sample showed an open-circuit voltage of 390mV, a shortcircuit current density of 7.8 mA/cm 2, a fill factor of 0.33 and an efficiency of 1.01% under irradiation of AM 1.5 and 100 mW / cm 2.
347 citations
TL;DR: In this paper, the structural, surface morphological, optical, electrical and electrochemical properties of Ni(OH)2 thin films were examined using a simple chemical bath deposition (CBD) method using nickel nitrate Ni(NO3)2 as starting material.
305 citations
TL;DR: In this paper, a CdS quantum dot sensitized solar cell based on a mesoporous TiO2 film with remarkable stability using I−/I3− electrolyte was presented.
Abstract: Here we present a CdS quantum dot sensitized solar cell based on a mesoporous TiO2 film with remarkable stability using I−/I3− electrolyte. Chemical Bath Deposition (CBD) was used to deposit the CdS quantum dots within the porous network. We show that a thin coating of the QD sensitized film with an amorphous TiO2 layer strongly improves the performance and photostability of the solar cell. We propose that the coating passivates QD surface states which act as hole traps and are responsible for photodegradation of the device. In addition, this coating decreases the recombination of electrons from the CdS quantum dots and the mesoporous TiO2 into the electrolyte solution. We obtain a significant improvement of all cell parameters resulting in a total light to electric power conversion efficiency of 1.24%.
249 citations
TL;DR: In this paper, the formation of CdS quantum dots (Q dots) on the vertically aligned ZnO nanorods electrode was carried out by chemical bath deposition, which achieved a power conversion efficiency of 0.54% under air mass 1.5 condition and incident-photon-to-current conversion efficiency showed 18.6%.
167 citations
TL;DR: In this paper, the properties of CdS thin films with (111) preferential orientation were investigated as a function of bath temperature and deposition time, and the structural properties of the obtained films were studied by X-ray diffraction analysis.
158 citations
TL;DR: In this article, Li et al. characterized the NiO films by scanning electron microscopy (SEM) and showed that their morphologies were distinct and both of their thickness was about 1μm.
139 citations
TL;DR: In this paper, well-aligned ZnO nanorod arrays with different sizes in diameter were fabricated on Si substrates by two-step chemical bath deposition method (CBD), i.e., substrate pre-treatment with spin co...
137 citations
TL;DR: In this paper, the effect of Ga-doping on optical properties and bandgap of CdS thin films was investigated using chemical bath deposition and X-ray diffraction and micro-Raman spectroscopy.
132 citations
TL;DR: In this paper, a two-step chemical bath deposition method was used to produce well-aligned ZnO nanorods on Si substrates and the structure and optical properties of the grown nanorod were investigated.
Abstract: Vertically well-aligned ZnO nanorods on Si substrates were prepared by a two-step chemical bath deposition method. The structure and optical properties of the grown ZnO nanorods were investigated b ...
130 citations
TL;DR: The effects of the process parameters on the properties of ZnS:Mn films were investigated in this paper, where the films were characterized by energy-dispersive X-ray spectrometer (EDX), inductively coupled plasma atomic emission spectroscopy (ICP-AES), Rutherford backscattering (RBS), secondary ion mass spectrometry (SIMS), attenuated total reflection-Fourier transform infrared (ATR-FTIR), XPS, XRD, high-resolution transmission electron microscopy (HRTEM), field emission
Abstract: ZnS:Mn thin films were deposited on quartz, Si (polycrystalline), and glass substrates using a chemical bath deposition (CBD) method in an aqueous solution containing ethylene diamine tetra acetic acid disodium salt (Na2EDTA) as the complexing agent for zinc ions and thioacetamide (TAA) as the sulfide source at temperatures ranging from 50 to 80 °C. ZnS:Mn thin films with thicknesses ranging from 60 to 450 nm were synthesized at various Mn2+/Zn2+ molar ratios ranging from 1 to 4. The effects of the process parameters on the properties of ZnS:Mn films were investigated. The films were characterized by energy-dispersive X-ray spectrometer (EDX), inductively coupled plasma atomic emission spectroscopy (ICP-AES), Rutherford backscattering (RBS), secondary ion mass spectrometry (SIMS), attenuated total reflection-Fourier transform infrared (ATR-FTIR) spectroscopy, X-ray photoelectron spectroscopy (XPS), X-ray diffractometer (XRD), high-resolution transmission electron microscopy (HRTEM), field emission scannin...
127 citations
TL;DR: In this paper, the effect of postdeposition treatments by annealing and CdCl2 activation on polycrystalline CdS layer grown by close-spaced sublimation (CSS) and chemical bath deposition (CBD) was studied.
Abstract: Photoluminescence (PL) measurements were used to study the effect of postdeposition treatments by annealing and CdCl2 activation on polycrystalline CdS layer grown by close-spaced sublimation (CSS) and chemical bath deposition (CBD). CdS films were either annealed in a temperature range of 200–600 °C or CdCl2 treated between 300–550 °C. The development of “red,” “intermediate orange,” “yellow,” and “green” luminescence bands is discussed in comparison with PL assignments found in literature. PL spectra from CdS layer grown by CSS are dominated by the yellow band with transitions at 2.08 and 1.96 eV involving (Cdi-A), (VS-A) complex states where A represents an acceptor. Green luminescence bands are observed at 2.429 and 2.393 eV at higher annealing temperature of 500–600 °C or CdCl2 treatment above 450 °C, and these peaks are associated with zero and a longitudinal optical phonon replica of “free-to-bound” transitions. As grown CBD-CdS films show a prominent red band with four main peaks located at 1.43, 1.54, 1.65, and 1.77 eV, believed to be phonon replicas coupled with local vibrational modes. This remains following postdeposition treatment. The red luminescence is associated with VS surface states and in the case of CdCl2 treatment with (VCd-ClS) centers. Postdeposition treatments of CBD and CdS promote the evolution of an intermediate orange band at 2.00 eV, most likely a donor-acceptor pair, and a yellow band at 2.12 eV correlated with (Cdi-VCd) centers. The green luminescence bands observed at 2.25 and 2.34 eV are associated with transitions from deep donor states (e.g., Cdi) to the valence band. These states form due to crystallinity enhancement and lattice conversion during annealing or CdCl2 activation. Observed changes in PL bands provide detailed information about changes in radiative recombination centers in CdS layer, which are suggested to occur during device processing of CdTe/CdS thin film solar cells.
TL;DR: In this article, a highly efficient TiO 2 photoelectrode was prepared by a seed-growing process using chemical bath deposition technique, followed by a covering process with ZnS layer, and a post-sintering process at 400°C.
TL;DR: By controlling the amount of attached CdS QDs, it is found that the surface photovoltage characteristics change significantly, and the relation between the performance of QDSSCs and their photvoltage characterization was also discussed.
Abstract: ZnO nanowire (NWs) arrays coated with CdS quantum dots (QDs) were successfully fabricated with a chemical bath deposition process. Scanning electron microscopy (SEM), transmission electron microscopy (TEM) and x-ray diffraction (XRD) have been utilized to characterize the samples. We have studied the processes of separation and recombination of the photo-generated charges in the visible region by surface photovoltage (SPV) and transient photovoltage (TPV) measurements. By controlling the amount of attached CdS QDs we found that the surface photovoltage characteristics change significantly. With a liquid electrolyte as the hole transport medium, the quantum dot sensitized nanowire solar cells (QDSSCs) exhibited short-circuit currents ranging from 0.8 to 2.6 mA cm−2 and open-circuit voltages of 0.35–0.44 V when illuminated with light intensity 100 mW cm−2. The relation between the performance of QDSSCs and their photovoltage characterization was also discussed.
TL;DR: In this article, photoelectrochemical performances of the as-prepared composite nanotubes were determined by measuring the photo-generated currents and voltages under illumination of UV-vis light.
TL;DR: In this article, a simple seeding method was proposed for growing a ZnO from a simple potassium permanganate solution treatment of various substrates (mainly glass and plastic substrates) which results in formation of a Mn-hydroxyoxide deposit on the substrate.
Abstract: Simple potassium permanganate solution treatment of various substrates (we discuss here mainly glass and plastic substrates) results in formation of a Mn–(hydroxy)oxide deposit on the substrate. This deposit, which can be totally invisible to both the eye and to a spectrophotometer, acts as an efficient seed layer that allows growth of ZnO by chemical bath deposition from alkaline solutions over a wide range of conditions under which the ZnO would not grow in the absence of the seed layer. The ZnO grows in the form of columns on top of a dense underlayer (formed in situ during the deposition), ca. 300 nm thick, of ZnO. The morphology (column shape, size and packing) can be controlled by the amount of the seed deposit. Since there is little or no homogeneous deposition in the solution, thick layers of ZnO (>5 µm) can be grown from a single deposition. Further control of the morphology is obtained by variation of the anion of the Zn salt. In addition to the very simple seeding method described here, the ethanolamine-based deposition bath used is highly reproducible and rapid (films of ca. 5 µm thick are obtained in ca. 30 min).
TL;DR: In this paper, a ZnS/Zn1-xMgxO buffer combination was developed to replace the CdS/i-ZnO layers in in-line co-evaporated Cu(In,Ga)Se2(CIGS)-based solar cells.
Abstract: A ZnS/Zn1-xMgxO buffer combination was developed to replace the CdS/i-ZnO layers in in-line co-evaporated Cu(In,Ga)Se2(CIGS)-based solar cells. The ZnS was deposited by the chemical bath deposition (CBD) technique and the Zn1-xMgxO layer by RF magnetron sputtering from ceramic targets. The [Mg]/([Mg] + [Zn]) ratio in the target was varied between x = 0·0 and 0·4. The composition, the crystal structure, and the optical properties of the resulting layers were analyzed. Small laboratory cells and 10 × 10 cm2 modules were realized with high reproducibility and enhanced stability. The transmission is improved in the wavelength region between 330 and 550 nm for the ZnS/Zn1-xMgxO layers. Therefore, a large gain in the short-circuit current density up to 12% was obtained, which resulted in higher conversion efficiencies up to 9% relative as compared to cells with the CdS/i-ZnO buffer system. Peak efficiencies of 18% with small laboratory cells and 15·2% with 10 × 10 cm2 mini-modules were demonstrated. Copyright © 2009 John Wiley & Sons, Ltd.
TL;DR: In this paper, the effect of K and Na excess (0?30?mol%) on ferroelectric and piezoelectric properties of KNN thin film was investigated and it was found that with increasing K and N excess in a precursor solution from 0 to 30?mol%, the leakage current and ferroelectric properties were strongly affected.
Abstract: We have fabricated K0.5Na0.5NbO3 (KNN) thin films on Pt substrates by a chemical solution deposition method and investigated the effect of K and Na excess (0?30?mol%) on ferroelectric and piezoelectric properties of KNN thin film. It was found that with increasing K and Na excess in a precursor solution from 0 to 30?mol%, the leakage current and ferroelectric properties were strongly affected. KNN thin film synthesized by using 20?mol% K and Na excess precursor solution exhibited a low leakage current density and well saturated ferroelectric P?E hysteresis loops. Moreover, the optimized KNN thin film had good fatigue resistance and a piezoelectric constant of 40?pm?V?1, which is comparable to that of polycrystalline PZT thin films.
TL;DR: In this article, the structural properties of zinc selenide thin films have been investigated by X-ray diffraction techniques and the optical properties showed direct band gap values were found to be in the region of 2.69-2.81 eV.
Abstract: Zinc selenide films have been deposited on glass substrate by chemical bath deposition method. The resultant films were annealed up to 473 K temperature. The structural properties of zinc selenide thin films have been investigated by X-ray diffraction techniques. The X-ray diffraction spectra showed that zinc selenide thin films are polycrystalline and have a cubic structure. The most preferential orientation is along the (111) direction for all films. The lattice parameter, grain size, and microstrain were calculated and correlated with annealing temperature. The optical properties showed direct band gap values were found to be in the region of 2.69–2.81 eV. The electrical studies shows conductivity increases with increase in annealing temperature. The optoelectric and structural data are discussed from the point of applications based on achieving high performance devices.
TL;DR: In this article, a CZnSnS4 (CZTS) thin-film solar cell was fabricated with all semiconductor layers prepared under non-vacuum conditions, and the best solar cell showed an open circuit voltage of 554 mV, a short current density of 6.70 mA/cm2, a fill factor of 43.4% and a conversion efficiency of 1.61%.
Abstract: Cu2ZnSnS4 (CZTS) thin film solar cells have been fabricated with the all semiconductor layers prepared under non-vacuum conditions. For the solar cell structure of Al/ZnO:Al/CdS/CZTS/Mo/Soda Lime Glass (SLG) substrate, ZnO:Al window, CdS buffer and CZTS absorber layers were deposited by sol-gel, chemical bath deposition (CBD) and sol-gel sulfurizing methods, respectively. Since the CdS buffer layer plays an important role in the final photovoltaic properties of thin film solar cells, an optimum condition of the CdS deposition was first determined. As a result of the investigations, the best solar cell showed an open circuit voltage of 554 mV, a short current density of 6.70 mA/cm2, a fill factor of 43.4% and a conversion efficiency of 1.61%. This is the highest conversion efficiency to date of the CZTS solar cell prepared under non-vacuum conditions. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
TL;DR: In this paper, oriented CuS nanoplates standing perpendicularly on F: SnO 2 (FTO) coated glass substrates have been prepared through a mild microwave assisted chemical bath deposition process in which copper acetate reacted with ethylenediamine tetraacetate acid disodium and thioacetamide in aqueous solution within 40min.
TL;DR: In this paper, the authors focused their intension on CBD zinc oxide (ZnO) films synthesis with different proposed deposition mechanisms and their integration into gas sensor and dye-sensitized solar cells.
TL;DR: In this paper, the activation energy of the deposition rate measurement can be used for determining the nature of deposition mechanism, and the authors found that at low solution temperature, the growth mechanism proceeds via the ion by ion process, and found the corresponding activation energy equal to 0.06 eV.
Abstract: This work deals with the preparation of cadmium sulfide (CdS) thin films by chemical bath deposition. The influence of the solution temperature is investigated in this study. We suggest that activation energy of the deposition rate measurement can be a tool for determining the nature of the deposition mechanism. We found that at low solution temperature, the growth mechanism proceeds via the ion by ion process, and found the corresponding activation energy equal to 0.06 eV. However, at higher solution temperature, the film deposition became via the cluster by cluster process, the growth rate activation energy is equal to 0.48 eV. The films' structural and optical properties were studied by x-ray diffraction analysis and UV–visible spectrophotometry. Structural analysis revealed that the deposited films have a cubic structure, and the crystallite size decreases with increasing deposition temperature. The transmission spectra of the film, in the visible range, show a high transmission coefficient (70%). The transmittance data analysis indicates that the optical band gap is closely related to the solution temperature. From this analysis, a direct band gap ranging from 2.21 to 2.34 eV was deduced. From the electrical characterization we inferred that CdS films are n-type and their dark conductivities reduced with increasing bath solution temperature. From the photoconductivity measurements we concluded that films deposited at low temperatures (less than 60 °C) or high temperatures (higher than 70 °C) have good optoelectronic properties suitable for utilization as a buffer layer in thin film solar cells.
TL;DR: In this paper, as-grown ZnO thin films were investigated using six different complexing agents, namely ammonia, hydrazine, ethanolamine, methylamine, triethanolamine and dimethylamine.
Abstract: Chemical bath deposition of ZnO thin films using six different complexing agents, namely ammonia, hydrazine, ethanolamine, methylamine, triethanolamine and dimethylamine, is investigated. As-grown films were mainly ZnO2 with a band gap around 4.3?eV. Films annealed at 400??C were identified as ZnO with a band gap around 3.3?eV. X-ray diffraction and micro-Raman spectroscopy revealed that as-grown films consist mainly of cubic zinc peroxide that was transformed into hexagonal ZnO after annealing. Rutherford backscattering spectroscopy (RBS) detected excess oxygen content in ZnO films after annealing. Fourier transform infrared spectroscopy of as-grown films showed a broad absorption band around 3300?cm?1 suggesting that the as-grown films may consist of a mixture of zinc peroxide and zinc hydroxide. X-ray photoelectron spectroscopy multiplex spectra of the O 1s peak were found to be consistent with film stoichiometry revealed by RBS. High-resolution transmission electron micrographs showed small variations of the order of 10?nm in film thickness which corresponds to the average grain size. A carrier density as high as 2.24?1019?cm?3 and a resistivity as low as 6.48 ? 10?1???cm were obtained for films annealed at 500??C in argon ambient.
TL;DR: In this article, lead sulfide (PbS) nanocrystallites have been successfully synthesized using chemical bath deposition (CBD) method, which were finally characterized for structural and optical properties.
TL;DR: The diameter of well-aligned ZnO nanorod arrays (ZNAs) grown on Si substrates has been well controlled from 150nm to 40nm by two-step chemical bath deposition method (CBD) as mentioned in this paper.
TL;DR: In this paper, Molybdenum disulphide thin films were deposited using chemical bath deposition method on nonconducting glass substrate using tartaric acid as a complexing agent at 363 K. X-ray diffraction pattern shows that polycrystalline with hexagonal structure.
TL;DR: In this article, the optical properties of the sample have been studied using the transmittance and reflectance measurements as a function of wavelength between 190 and 3300 nm, and the optical band gap is direct with a value of 1.31 eV.
Abstract: SnS films have been deposited at room temperature by the chemical bath deposition technique. The films have been examined to evaluate their structure, morphology, composition and optical properties. SnS films were polycrystalline with an orthorhombic-herzenbergite structure. The lattice parameters and crystallite size of the sample have been calculated to be a = 4.39 A, b = 11.17 A, c = 3.97 A with a/c = 1.106, and 67 nm, respectively. SnS films have been well crystallized in the form of cylindrical rods and the atomic ratio of Sn to S is 49.8 : 50.2. The optical properties of the sample have been studied using the transmittance and reflectance measurements as a function of wavelength between 190 and 3300 nm. The optical band gap is direct with a value of 1.31 eV. The refractive index and extinction coefficient as a function of wavelength for the film were investigated from the transmittance spectrum by applying the envelope method. The optical parameters of the material such as dielectric constants (n, k, e1 and e∞), plasma frequency ωp and carrier concentration Nopt were also evaluated.
TL;DR: ZnO hexagonal single-crystal slices with predominant (001) and (0001) facets have been fabricated by poly(ethylene glycol)-assisted chemical bath deposition.
Abstract: ZnO hexagonal single-crystal slices with predominant (0001) and (0001) facets have been fabricated by poly(ethylene glycol)-assisted chemical bath deposition.
TL;DR: In this paper, a donor-acceptor pair PL at low-temperature and temperature-dependent PL have been studied in terms of impurity and defect levels created in the CIGS film during the CBD-CdS process.
TL;DR: Ni-doped ZnO nanostructures were synthesized in situ through a pulsed-electrodeposition-assisted chemical bath deposition method, and the optical and magnetic properties of the nanostructure were studied as mentioned in this paper.
Abstract: Ni-doped ZnO nanostructures were synthesized in situ through a pulsed-electrodeposition-assisted chemical bath deposition method, and the optical and magnetic properties of the nanostructures were studied. It was found that the morphology of the nanostructures evolved from a rodlike to a sheetlike structure because of the different growth modes, and a growth mechanism is proposed to explain these findings. A relatively strong UV emission was observed for the nanorods, whereas a relatively strong visible emission was seen for the nanosheets. Ni was successfully doped into the ZnO wurtzite lattice structure as revealed by X-ray diffraction and X-ray photoelectron spectroscopy and also verified by the cathodoluminescence characterization. Room-temperature ferromagnetism was also observed in the Ni-doped ZnO nanostrucures. The results are helpful to tailor the physical properties of ZnO by changing its morphology and composition.