Showing papers on "Indium tin oxide published in 1985"
TL;DR: Glass plates coated with transparent thin film conductors of indium-tin oxide (ITO), 100 nm thick and 10 microns wide, have been successfully used to record spike potentials from neuronal monolayer cultures to accelerate the construction of high density recording patterns that could exceed 400 microelectrodes per mm2.
247 citations
TL;DR: In this article, the effect of heat treatment in various environments on the structural, electrical, and optical properties of indium tin oxide films was investigated for the first time, and the effects of a new annealing ambient, cracked ammonia (reducing atmosphere), on the reactively sputtered oxide films were reported for the very first time.
Abstract: Indium tin oxide films have been grown by rf sputtering at various Ar‐O2 mixtures, at low substrate temperatures (200 °C), and deposition rates (25 A/min), followed by post deposition annealing (at 350 °C) in different ambients (O2, N2, and cracked ammonia). Influence of a reactive gas (oxygen) on the sputtering rate of a metallic (indium/tin) alloy target has been investigated. Growth parameters and annealing conditions have been optimized. The films were characterized by electron and x‐ray diffraction, scanning electron microscopy, and transmittance as a function of wavelength. The effect of heat treatment in various environments on the structural, electrical, and optical properties has been investigated. Effect of a new annealing ambient, cracked ammonia (reducing atmosphere), on the reactively sputtered oxide films is being reported for the first time. Cracked ammonia was found to be very effective and cheap and resulted in films of high quality (electrical and optical) with good structural properties...
152 citations
TL;DR: In this article, the dc magnetron sputter deposition of n-ITO onto an epitaxial p/p(+) structure grown on commercial p(+) bulk substrates was used to improve the performance of indium tin oxide (ITO)/indium phosphide solar cells.
Abstract: Improvements in the performance of indium tin oxide (ITO)/indium phosphide solar cells have been realized by the dc magnetron sputter deposition of n-ITO onto an epitaxial p/p(+) structure grown on commercial p(+) bulk substrates. The highest efficiency cells were achieved when the surface of the epilayer was exposed to an Ar/H2 plasma before depositing the bulk of the ITO in a more typical Ar/O2 plasma. With H2 processing, global efficiencies of 18.9 percent were achieved. It is suggested that the excellent performance of these solar cells results from the optimization of the doping, thickness, transport, and surface properties of the p-type base, as well as from better control over the ITO deposition procedure.
152 citations
Patent•
19 Aug 1985
TL;DR: In this paper, a layer of resin containing EL phosphor thoroughly and uniformly dispersed therein, and depositing on the surface of said resin a fine layer of a transparent electrode consisting essentially of indium tin oxide.
Abstract: Electroluminescent elements of high light intensity and long useful life, operating at comparatively low energy input, are obtained by directly bonding to a supported web of thin plastic film without intermediate adhesive a layer of resin containing EL phosphor thoroughly and uniformly dispersed therein, and depositing on the surface of said resin a fine layer of a transparent electrode consisting essentially of indium tin oxide. In alternative embodiments the said resin layer is sandwiched between thin deposited layers of alkaline earth metal titanate.
100 citations
TL;DR: In this paper, LiNbO3 electrooptic modulators with indium tin oxide (ITO), a transparent conductor, have been shown to have improved stability against electrical dc bias drift by replacing the SiO2 buffer layer with ITO.
Abstract: Improved stability against electrical dc bias drift has been demonstrated in LiNbO3 electro‐optic modulators by replacing the commonly used SiO2 buffer layer with indium tin oxide (ITO), a transparent conductor. The long term drift of the modulators having an ITO buffer layer with a sheet resistivity of ∼20 Ω/⧠ is less than 0.3% in 8 h. The mechanism of the dc drift phenomenon is discussed using an electrical equivalent circuit model of the modulator.
63 citations
TL;DR: In this article, the preparation and characterization of Langmuir-Blodgett monolayers of copper octa(dodecoxymethyl) phthalocyanine was discussed.
61 citations
TL;DR: Electrochromic properties, are reported for thin films of the transparent conducting oxides In/sub 2/OCd3:Sn are doped SnO/sub 1/2/3/4/5/6/7/8/9/10/11/12/13/14/15/16/17/18 are reported.
Abstract: Electrochromic properties, are reported for thin films of the transparent conducting oxides In/sub 2/OCd3:Sn are doped SnO/sub 2/.
34 citations
TL;DR: A quantitative theoretical model for the radiative performance of heavily n-doped semiconductors is presented and can yield single uniform coatings on glass with 78% normal solar transmittance and 20% hemispherical thermal emittance.
Abstract: A quantitative theoretical model for the radiative performance of heavily n-doped semiconductors is presented. It embraces the combined effects of valence electrons, free electrons, and polar optical phonons. The model is applied to indium-tin-oxide films and is used to compute integrated luminous, solar, and thermal properties. Optimization of film thickness and electron density can yield single uniform coatings on glass with 78% normal solar transmittance and 20% hemispherical thermal emittance.
31 citations
Abstract: Optical and electrical properties of transparent conductive oxide films of undoped and doped SnO2 and In2O3 prepared using the pyrolysis spray method were studied. The optical constants extracted from transmittance and reflectance measurements between 0.25 and 3 mu m are interpreted to give values of the direct allowed band gap (4.54 eV for SnO2:F and 3.80 eV for ITO) and the indirect forbidden band gap (2.77 eV for SnO2 and 2.90 eV for ITO). Typical SnO2:F and ITO films present high transmission ( approximately=85%) and resistivities of about (9*10-3-5*10-4) Omega cm and 10-1 Omega cm respectively. Suitable figures of merit allow a useful comparison to be made of the physical properties of the different films.
29 citations
TL;DR: In this paper, thin films of ZnSe were deposited onto several types of substrates, including glass coated with indium tin oxide and semitransparent metal layers, using the close-spaced vapour transport (CSVT) method.
28 citations
Patent•
04 Sep 1985
TL;DR: In this article, a variable transmission window comprises outer panes of glass 17 and 19 and a multi-layer electrochromic device allowing variation in the optical transmission properties of the window.
Abstract: A variable transmission window comprises outer panes of glass 17 and 19 and a multi layer electrochromic device allowing variation in the optical transmission properties of the window. The device comprises a transparent electrically conductive layer 12 such as indium tin oxide, an electrochromic material 13 such as a transition metal oxide bronze, a solid electrolyte 14 which is a fast ion conductor of ions of the metal which dissolves in the electrochromic material, a second electrochromic material 15, and a second transparent electrically conductive layer 16. The electrochromic material may be MoO3 or WO3. The solid electrolyte 14 may be a Bordeaux glass of LiCl, Li2 O, B2 O3. A quantity of metal colouration atoms, for example lithium, may be transferred reversibly between the electrochromic layers 13 and 15 by applying potentials to contacts 21 and 22. A given quantity of metal coloration atoms produces a coloration of greater density in one electrochromic layer than in the other, for example by having one layer 15 thicker than the other layer 13.
TL;DR: In this article, a study was made of the temperature and magnetic field dependence of the conductivity in indium-tin-oxide (ITO) films for two and for three dimensional electron systems.
Abstract: A study was made of the temperature and magnetic field dependence of the conductivity in indium-tin-oxide (ITO) films for two and for three dimensional electron systems. Clear evidence of a three dimensional localization as well as Coulomb interaction effects is observed above 15 K in relatively thick samples (≥400 A). On application of a magnetic field, a two-to-three dimensional transition is observed above a critical field, that depends on the sample thickness. From the temperature dependence of conductivity for the thickest film (20000 A), it was found that ITO shows a superconducting nature below 3.5 K. For the sample with an intermediate thickness (1000 A), temperature and magnetic field dependence of conductivity is discussed from the view-point of the competition between electron localization and superconductivity.
TL;DR: In this paper, a Si-rich SiO2SiO2•SiO•ITO (In2O3) multiple-layer structure is reported, and the light emitted has a peak at approximately 3.3 eV for ITO and at 2.6eV for In2O 3.
Abstract: Electroluminescence emission from indium‐tin‐oxide (ITO) and indium oxide films incorporated in a Si‐rich SiO2‐SiO2‐ITO (In2O3) multiple‐layer structure is reported. The light emitted has a peak at approximately 3.3 eV for ITO and at 2.6 eV for In2O3. The intensity of the light is found to depend on the applied electric field.
TL;DR: In this paper, the performance of solar cells based on single-crystal substrates of p-type gallium arsenide (GaAs) and thin films of indium tin oxide (ITO) deposited by rf sputtering was discussed.
Abstract: This communication discusses the performance of solar cells based on single‐crystal substrates of p‐type gallium arsenide (GaAs) and thin films of indium tin oxide (ITO) deposited by rf sputtering. Such devices have previously yielded conversion efficiencies of less than 5% but here, efficiencies of greater than 7% are reported. This is still poor by comparison with devices based on indium phosphide (InP)/ITO and the reason seems to be due to the excessive values and rather low activation energy (ΔE) of J0. The variation of quantum efficiency with wavelength shows a peak at about 80% for a wavelength around 600 nm.
TL;DR: In this article, the development and characterisation of a GaAs Schottky barrier photodiode based on transparent conducting indium tin oxide (ITO) has been discussed.
Abstract: The letter discusses the development and characterisation of a GaAs Schottky barrier photodiode based on transparent conducting indium tin oxide (ITO). The use of ITO results in external quantum efficiencies of 60% at 830 nm. The devices have been measured to have a FWHM impulse response of ~20 ps and a ?3 dBm bandwidth in excess of 20 GHz.
Patent•
23 Dec 1985TL;DR: In this article, an indium tin oxide layer is formed between a metallic pattern on a glass substrate and a photoresist mask, which provides more positive delineation of thin film device patterns.
Abstract: An optically transparent and electrically conductive film is patterned on aubstrate, for instance in an electro-optical display device such as an electroluminescent device having a patterned transparent electrode layer, by a process utilizing a double masking structure that provides for more positive delineation of thin film device patterns. In this process, an indium tin oxide layer is formed between a metallic pattern on a glass substrate and a photoresist mask. The indium tin oxide layer has a metal lift-off mask under those areas that are to be removed and a photoresist protective mask over those areas that are to remain. The double masking will also provide greater protection to the electrode areas during the critical etching steps in developing an electroluminescent display.
TL;DR: In this paper, the first thermal detection of surface plasmon-polaritons (SPPs) using a thin-film thermocouple of indium tin oxide and the metal (silver or gold) on which the SPP is propagating was described.
TL;DR: In this article, the thermal stability and electrical, galvonomagnetic, thermoelectric and optical properties of indium tin oxide (ITO) films were evaluated using the d.c. sputtering technique.
TL;DR: In this paper, the transparent conductive n-type indium oxide films were deposited in two steps by reactive evaporation of indium on the p-type InP single-crystal substrates.
Abstract: Indium oxide/indium phosphide heterojunction solar cells have been fabricated in which the transparent conductive n‐type indium oxide films were deposited in two steps by reactive evaporation of indium on the p‐type InP single‐crystal substrates. The cells were heat resisting up to 500 °C in air and had a solar power conversion efficiency of 16.3% without antireflection coatings.
TL;DR: The diffusion of oxygen through an impervious ITO layer has been determined by measuring admittances in the range 5×10 −5 -5 s −1 as discussed by the authors, which can be fit by a model which assumes simultaneous oxygen diffusion and generation.
TL;DR: In this article, the structural studies reveal that the films are polycrystalline in nature and contain predominantly In2O3 and ITO, and exhibit resistivity as low as 10−2 and 10−4 Ωcm, IR reflection ≈ 40 and 60%, and transmission in visible range ≈ 70 and ≈ 80%, respectively.
Abstract: Transparent conducting indium oxide and indium tin oxide are prepared by electroless deposition technique. The structural studies reveal that the films are polycrystalline in nature and contain predominantly In2O3 and In2O3:Sn (ITO). Both the films, In2O3 and ITO exhibit a resistivity as low as 10−2 and 10−4 Ωcm, IR reflection ≈ 40 and ≈ 60%, and transmission in visible range ≈ 70 and ≈ 80%, respectively. The band gap of In2O3 and ITO is found to be ≈ 3.5 and ≈ 3.6 eV, respectively.
Transparentes leitfahiges Indiumoxid und Indiumzinnoxid werden mit einer elektrodenlosen Aufdampftechnik prapariert. Die Strukturuntersuchungen zeigen, das die Schichten polykristallin sind und vorwiegend In2O3 und In2O3:Sn (ITO) enthalten. Beide Schichten In2O3 und ITO haben einen niedrigen Widerstand von 10−2 bzw. 10−4 Ωcm, das IR Reflexionsvermogen betragt ≈ 40 bzw. 60% und die Transmission im sichtbaren Bereich ≈ 70 bzw. 80%. Die Bandlucke von In2O3 und ITO wird zu 3,5 bzw. 3,6 eV bestimmt.
TL;DR: In this paper, the results for thin film (~500A) electrodes, formed both by reactive sputtering from an iron target and by plasma oxidation of a sputterdeposited iron film, are reported.
Abstract: The results for iron oxide, thin film (~500A) electrodes, formed both by reactive sputtering from an iron target and by plasma oxidation of a sputter‐deposited iron film, are reported. The reactively sputtered electrodes were formed by deposition onto sputter‐deposited films of both iron and conducting indium tin oxide (ITO), while the plasma oxidized electrodes were formed with ITO only. The performance of the electrodes as photoanodes for evolution was found to be strongly dependent on a number of fabrication parameters, the best results being achieved for films formed on ITO and then vacuum annealed, both at 350°C. In this case, the performance matched or exceeded that reported in the literature for other methods of fabrication of polycrystalline iron oxide. Annealing these films in oxygen resulted in a decrease in photocurrent by a factor of three to four, as well as a 0.7 V suppression of the photocurrent onset potential. The effect was reversed on reannealing in vacuo. Postfabrication treatment of electrodes in various aqueous solutions was found to effect their performance significantly. More specifically, a substantial enhancement of the photocurrent in the onset region was achieved by treatment in a boiling KSCN solution. Mott‐Schottky plots and conductivity measurements are presented to illuminate these phenomena.
Patent•
26 Nov 1985
TL;DR: In this paper, a method for fabricating thin film amorphous silicon p-i-n photodiode array image sensors that have transparent photodiodes electrodes made of indium tin oxide or SnO2 and thin-film aluminum conductors for connecting the transparent electrodes to signal processing circuitry is provided.
Abstract: A method is provided for fabricating thin film amorphous silicon p-i-n photodiode array image sensors that have transparent photodiode electrodes made of indium tin oxide or SnO2 and thin-film aluminum conductors for connecting the transparent electrodes to signal processing circuitry. The method provides for patterning of the aluminum conductors without eroding the material of the transparent electrodes through reduction of such material by hydrogen gas released during etching of the aluminum by using a photoresist etch mask that covers the areas of the transparent electrodes and defines the pattern of the aluminum conductors.
Patent•
27 Dec 1985
TL;DR: In this paper, optically transmissive conductors, particularly resistive electrodes for optical devices such as electroluminescent lamps and displays, comprising a thin layer of indium tin oxide (ITO) stabilized by a layer of a metal oxide, such as palladium oxide or nickel oxide, are disclosed.
Abstract: Disclosed are optically transmissive conductors, particularly resistive electrodes for optical devices such as electroluminescent lamps and displays, comprising a thin layer of indium tin oxide (ITO) stabilized by a layer of a metal oxide, such as palladium oxide or nickel oxide. In the disclosed method, a thin layer of conductive ITO is coated with a metal layer and then oxidized by heating in air to 500° C.
Patent•
02 Aug 1985
TL;DR: In this paper, an additive process for manufacturing a mask (113) used in x-ray photolithography includes the step of coating a boron nitride layer (102) with a layer of indium tin oxide (104) and a second layer of BORON nitride (106).
Abstract: An additive process for manufacturing a mask (113) used in x-ray photolithography includes the step of coating a boron nitride layer (102) with a layer of indium tin oxide (104) and a second layer of boron nitride (106). The second boron nitride layer is patterend and used as a stencil during a plating process while the indium tin oxide layer is used as a plating base. Because boron nitride and thin indium tin oxide are both x-ray transparent, neither the stencil nor the plating base need be removed during the manufacturing process.
TL;DR: In this paper, a shallow n+p junction is constructed on a p-type silicon substrate using phosphorus diffusion at a temperature of 800 °C, and a conductive layer of indium tin oxide is then deposited by spray pyrolysis.
TL;DR: In this article, the authors studied electroluminescence from cermet films in the high field pre-breakdown regime and found that an increase in the voltage can enhance the light intensity by orders of magnitude, while the spectral features remain almost unchanged.
TL;DR: In this paper, dc-electroluminescent cells were fabricated by plasma-assisted organometallic chemical vapor deposition, using di-π-cyclopentadienyl manganese [(C5H5)2Mn] as a new source.
Abstract: Al/ZnSe:Mn/ITO (indium tin oxide) dc-electroluminescent cells were fabricated by plasma-assisted organometallic chemical vapor deposition. As a new manganese source, di-π-cyclopentadienyl manganese [(C5H5)2Mn] was successfully used for the first time.
TL;DR: In this paper, a new type of sputtering source, called a ''biplanar magnetron'' was described, which permits well controlled, metallic (or ''high rate''''mode deposition of SiO2 for large area industrial applications.
Abstract: A new type of sputtering source, called a ‘‘biplanar magnetron,’’ is described which permits well controlled, metallic (or ‘‘high rate’’)‐mode deposition of SiO2 for large area industrial applications. Two biplanar magnetrons have been used to fabricate optical multilayer coatings on a 1‐m‐wide web. Clear films of SiO2 have been deposited with optical thickness uniformity equal to ±2% at a deposition rate of 3.6 A/kW m/min. With one biplanar source operated at 20 kW, this rate corresponds to a line speed of 7.2 cm/min for a 1000‐A physical thickness of SiO2. The device is equally useful for many other compounds, including AlN, ZnO, Al2O3, ZrO2, and indium tin oxide.
TL;DR: In this article, indium tin oxide films have been grown by reactively sputtering an indium/tin metallic alloy target in argon-oxygen mixtures, and growth parameters and annealing conditions have been optimized at low temperatures.