Showing papers on "Photoluminescence published in 1975"
TL;DR: In this paper, a systematic study of the incorporation of shallow acceptor dopants in highly refined VPE and LPE gallium arsenide has been carried out, which has resulted in an identification catalogue for the various elements which has been compared with the assignments of other workers.
489 citations
TL;DR: In this article, the electrical properties and the luminescence spectra of CuInSe2 melt−grown single crystals as a function of the growth and annealing conditions, and the presence of extrinsic dopants such as Zn or Cd.
Abstract: We discuss the electrical properties and the luminescence spectra of CuInSe2 melt−grown single crystals as a function of the growth and annealing conditions, and the presence of extrinsic dopants such as Zn or Cd. We find that crystals grown from melts containing a slight Se excess or annealed under maximum Se pressure are p type, whereas crystals grown from excess In melts or annealed under minimum Se pressure (vacuum) are n type. The low−temperature photoluminescence spectra of crystals as−grown or annealed between 400 and 700 °C are characteristic of the conductivity type. At 77 °K, p−type crystals emit in a band peaked at 1.00 eV (type A spectrum), whereas the emission of n−type crystals peaks at 0.93 eV (type B spectrum). Types A and B spectra can be interchanged by alternate anneals in minimum or maximum Se pressure. Type B emission dominates the electroluminescence spectrum of p−n junctions. A sharp band−to−band emission at 1.04 eV is present in the 77 °K photoluminescence spectrum of some high−res...
145 citations
TL;DR: In this paper, a series of phonon-coupled emission bands with a no-phonon peak at 1.454 eV was found to be dominant in most samples and grows in intensity with increasing In concentration.
Abstract: Photoluminescence measurements have been performed at 4.2 K between 1.2 and 1.6 eV on compensated high‐resistivity CdTe containing from 1015 to 1018 cm−3 indium. A series of phonon‐coupled emission bands with a no‐phonon peak at 1.454 eV is dominant in most samples and grows in intensity with increasing In concentration. On the basis of the compensation model, the 1.454‐eV emission is attributed to radiative recombination at an [cadmium vacancy‐In] acceptor complex. Comparison of the experimental results with this model suggests that the chemical equilibria governing formation of the acceptor complex are frozen in at approximately 500 K as the sample is cooled from the growth temperature. The existence of significant changes at 500 K in the mobility of defects related to the acceptor complex is confirmed by the observation of a prominent growth in the 1.454‐eV emission at an annealing temperature of 500 K in A+‐implanted n‐type CdTe. Exciton emission in the CdTe : In samples is dominated by a narrow bound...
98 citations
TL;DR: In this paper, the photoluminescence of ZnSe doped by diffusion of Al at high temperature (1000-1100°C) or by Ga at low temperature (600 °C).
Abstract: We have studied the photoluminescence of ZnSe doped by diffusion of Al at high temperature (1000–1100 °C) or by Ga at low temperature (600 °C). The diffused samples are highly conductive (0.1<ρ<10 Ω cm). According to the doping conditions the luminescence, at 300 °K, is dominated by the well‐known self‐activated orange emission (6300 A) or by a yellow‐green band that we assign to Na‐Al complexes. Annealing in zinc atmosphere was found to have a large influence on the photoluminescence of the Ga‐doped samples only. Thus, at 300 °K, the annealed samples exhibit a blue intrinsic emission with a strong reduction of the orange or the yellow‐green bands; at 77 and 4.2 °K the photoluminescence spectra are dominated by blue lines corresponding, respectively, to free‐electron–acceptor or donor‐acceptor recombinations. We show that the shallow acceptor involved is Na.
96 citations
86 citations
Book•
01 Sep 1975
TL;DR: The theory of multiphonon IR-absorption is studied in this paper, where it is shown that the high frequency tail of the Lattice Absorption Spectra of Simple Crystals can be used to measure small optical losses in Infrared Transmitting Materials.
Abstract: Section I Multiphonon Absorption.- Theory of Multiphonon Absorption: A Review.- Multiphonon Absorption for Various Forms of the Anharmonic Potential.- Cumulant Methods in the Theory of Multiphonon Absorption.- The High Frequency Tail of the Lattice Absorption Spectra of Simple Crystals.- Optical Absorption by Alkali Halides: Possible Structure in the Multiphonon Region.- Experimental Studies of Multiphonon IR Absorption.- Temperature Dependence of Multiphonon Absorption in Fluorite Crystals.- Multiphonon Absorption in the Alkaline Earth Fluorides.- Multiphonon Absorption in KC?, NAC? and ZnSe.- Two-Phonon Absorption Spectra of III-V Compound Semiconductors.- Section II Electronic Processes.- Urbach's Rule.- Magnetic Circular Dichroism of the Urbach Edge in KI, CdTe and T?C?.- Theory of New Transients and Optical Phenomena in Spatially Dispersive Media.- Dispersion of the Elasto-Optic Constants of Potassium Halides.- Optical Transmission in Iodine Transported ?-HgS.- Section III Impurity Effects.- Impurity Induced Absorption in Transparent Crystals.- Raman, Photoconductive and Acoustoelectric Probes of Residual Deep Impurities and Absorption in GaAs.- Identification of Fe4+, Fe5+ and Fe4+-VO Photochromic Absorption Bands in SrTiO3.- Picosecond Spectroscopy of Transient Absorption in Pure KC?.- Section IV Glasses.- Highly Transparent Glasses.- Multiphonon Absorption in the Chalcogenide Glasses As2S3 and GeS2.- Multiphonon Absorption in Chalcogenide Glasses.- Theory of Multiphonon Absorption in the Transparent Regime of Amorphous Solids.- Light Scattering from Composition Fluctuations in the Superspinodal Region of a Phase-Separating Oxide Glass.- Two-Photon and Two-Step Absorption in Glass Optical Waveguide.- Optically Induced Effects in Photoluminescence Studies of Chalcogenide Glasses.- Section V Multiphoton Processes and Nonlinear Effects.- Nonlinear Spectroscopy in Transparent Crystals.- HF and CO2 Laser Measurements of Dispersion of the Nonlinear Susceptibility in Zinc-Blende Crystals.- Multiphoton Ionization Probability and Nonlinear Absorption of Light by Transparent Solids.- Nonlinear Spectroscopy of Excitons in CuC?.- Nonlinear Wave Propagation in a Transparent Medium.- Picosecond Laser-Induced Damage in Transparent Media.- Second-Harmonic Generation of Intense Laser Light in Transparent Centrosymmetric Solids.- Section VI Measurement Techniques.- A Review of Techniques for Measuring Small Optical Losses in Infrared Transmitting Materials.- Improved Laser Calorimetric Techniques.- Measurement of Small Absorption Coefficients from Thermally Induced Shifts at the Fundamental Edge.- An Alternative Way to Determine Absorption Coefficients in Highly Transparent Solids: Theory.- A Calorimetric Technique for the Measurement of Low Optical Absorption Losses in Bulk Glass and Optical Communication Fibres.- Raman Scattering Technique to Evaluate Losses in GaAs Dielectric Waveguides.- Accurate Spectrophotometer for the Attenuation Measurement of Low-Loss Optical Materials.- Surface Studies with Acoustic Probe Techniques.- A 10.6 Micron Modulated Light Ellipsometer.- Measurements of Stress-Optic Coefficients in the Transparent Regime of Solids.- Measuring Photoelastic and Elastic Constants of Transparent Materials by Application of Static Stress.- List of Contributors.
86 citations
TL;DR: In this paper, the ground state vibrational constants of the infrared, Orange, and Blue systems of FeO were determined from the laser excited photoluminescence spectra.
Abstract: Band emission from the Infrared, Orange, and Blue systems of FeO is observed in chemiluminescent flames resulting from the reaction of Fe with O3, N2O, NO2, and discharged O2. Flames are produced at a relatively low temperature (700 K) in flowing inert gas at pressures of 10−3 atm. Bands not previously reported are observed and ascribed to FeO. Reaction of Fe with O2 produces continuumlike emission of unidentified origin; however, laser photoluminescence studies confirm ground state FeO is present. Photon yields for the Orange systems of FeO formed in reactions with O3 and N2O are found to be on the order of 2% and 0.2%, respectively. Photoluminescence of FeO is excited with a krypton ion laser and a cw, tunable dye laser.Ground state vibrational constants of ω″ e = 875.8 cm−1 and ω″ e x ″ e = 4.6 cm−1 are determined from the laser excited photoluminescence spectra. Using the tunable dye laser, a rotational constant for the upper state of the B 0,0 band (λ = 579 nm) is found to be B′0 = 0.497 cm−1. Radiative lifetimes of the Orange system upper electronic levels are measured using a pulsed, tunable dye laser excitation source. Lifetimes are found to be on the order of 450±100 nsec.
83 citations
TL;DR: In this article, photoluminescence measurements made at various depths below the surface of annealed GaAs single crystals are compared with vacancy distribution profiles obtained from electrical measurements.
61 citations
TL;DR: In this paper, a graded-band-gap pGa1−xAlxAs−nGaAs solar cell is fabricated by utilizing the diffusion of Al in the Ga melt.
Abstract: The theoretical spectral response of the graded‐band‐gap pGa1−xAlxAs‐nGaAs solar cell is calculated by solving the continuity equations. The electric fields produce a collection efficiency two times larger than that of the abrupt heterojunction diodes at wavelengths less than 700 nm for surface recombination velocities of 106–107 cm/sec. The graded‐band‐gap diode can be operated at high frequencies because of the reduced transit time of minority carriers in the p‐type layer. A graded‐band‐gap pGa1−xAlxAs‐nGaAs solar cell is fabricated by utilizing the diffusion of Al in the Ga melt. The gradient of the energy gap is evaluated by photoresponse and photoluminescence measurements. The photoluminescence shows a broad emission peak from 700 to 800 nm at 77 K.
54 citations
TL;DR: In this article, the outdiffusion of these elements during annealing to 850°C in vacuum and with Ga or As overpressure and SiO 2 coatings is studied by monitoring the intensities of these peaks.
39 citations
TL;DR: In this paper, a special case of two-photon spectroscopy called optical-optical double resonance (OODR) was proposed, in which two visible or uv wavelength photons of different frequencies resonantly excite a molecule from an initial level (v″,J″) to a final level(v*,J*) by way of real intermediate levels (v′,J′).
Abstract: BaO molecules were sequentially excited by collinearly propagating radiation from two cw lasers, an argon ion laser (488.0 and 496.5‐nm lines) and a tunable (560–630 nm) rhodamine 6G dye laser. This sequential excitation technique, called optical–optical double resonance (OODR), is a special case of two‐photon spectroscopy in which two visible or uv wavelength photons of different frequencies resonantly excite a molecule from an initial level (v″,J″) to a final level (v*,J*) by way of a real intermediate level (v′,J′). Two types of optical double resonance experiments were performed on BaO. The first, excitation spectroscopy, revealed 19 vibronic levels of 1Σ+ electronic symmetry between 36 490 and 38 620 cm−1 above E (X 1Σ,re). These 19 1Σ+ levels belong to two or more perturbed electronic states. No 1Π levels were found, although levels belonging to the upper state of the BaO B (1Π) –X 1Σ Parkinson bands occur in this energy region. The second type of experiment, photoluminescence spectroscopy, enabled ...
TL;DR: In this article, the effect of nitrogen concentration in the range less than 1019 cm−3 (using the Lightowlers correction factor) on the growth process and materials properties was examined.
Abstract: The PH3-HCl-Ga-H2 technique for VPE growth of GaP is described. The influence of various growth parameters, including substrate temperature, orientation, and PH3 flow rate on morphology and growth rate are described. For both VPE and LPE nitrogen doping is known to be a major factor in obtaining high green luminescence efficiency. The major emphasis of this paper is an examination of the effect of nitrogen concentration in the range less than 1019 cm−3 (using the Lightowlers correction factor) on the growth process and materials properties, such as defect structure, photoluminescence spectra (at 300 and 77K) and photoluminescence intensity and lifetime. The LED device performance (B/J and efficiency) is used as the final test of material quality. Nitrogen is found to be incorporated far in excess of the solubility limit, and the solid gas distribution coefficient for nitrogen is found to increase rapidly with decreasing temperature below 840°C . The optimum nitrogen concentration for high diode efficacy, photoluminescence intensity, and lifetime is found to be approximately 5 × 1018 cm−3, where diodes fabricated by Zn diffusion into the VPE GaP have efficiencies at a current density of 10 A/cm2 of 0.1%, comparable to the state-of-the-art in the more widely used grown p-n junctions using LPE.
TL;DR: In this paper, the successful fabrication of high-quality DH GaAs lasers from a simplified three-layer structure is reported, and the main asset of this structure is the transparency of its final layer to recombination radiation occurring in the active layer.
Abstract: The successful fabrication of high‐quality DH GaAs lasers from a simplified three‐layer structure is reported. A major asset of this structure is the transparency of its final layer to recombination radiation occurring in the active layer, thus permitting the use of nondestructive photoluminescent techniques for material evaluation prior to device fabrication. In the course of photoluminescence investigations on this material the additional important observation has been made that indirect excitation (in which photocarriers are generated in the top ternary layer) has significant advantages over direct excitation (in which photocarriers are generated directly in the active layer). These include (i) the direct measurement of Al concentrations in both upper layers, (ii) the measurements of the minority‐carrier diffusion length in the upper layer, (iii) an easily obtained indication of taper in the thickness of the upper layer, and (iv) surprisingly effective excitation of the active layer. By combining direc...
TL;DR: In this article, the cathodoluminescence and photoluminecence spectra have been measured in as-grown and doped crystals over the temperature range 100-400K.
Abstract: SnO2 single crystals have been doped with varying amounts of Eu. The cathodoluminescence and photoluminescence spectra have been measured Thermoluminescence has been investigated in as-grown and doped crystals over the temperature range 100-400K. New traps appear, which are associated with the addition of Eu. When Li is added as well, these traps are not created to any significant extent because charge compensation by interstitial Li+ ions occurs preferentially.
TL;DR: Several sources of the dark-line defect (DLD) that causes rapid degradation of GaAs-AlGaAs double-heterostructure (DH) lasers have been identified by means of photoluminescence (PL) topography and a laser-induced degradation technique as mentioned in this paper.
Abstract: Several sources of the dark-line defect (DLD) that causes rapid degradation of GaAs-AlGaAs double-heterostructure (DH) lasers have been identified by means of photoluminescence (PL) topography and a laser-induced degradation technique. All the sources that have been identified correspond to crystal defects, among which dark-spot defects (DSD) that are native to as-grown wafers are found to be most important. The growth and propagation processes of DLD's and DSD's have also been investigated. These defects are found to be highly mobile under high-intensity laser pumping. The correlation between the substrate dislocations and the DSD's has been examined by etching and X-ray topography. Although most DSD's correspond to etch-pits in epilayers, they are not always correlated with substrate dislocations.
TL;DR: In this article, the hole concentration (p) is related to the concentration (XZn) in the Ga solution by p=5×1020(X Zn)1/2.
Abstract: p‐type Zn‐doped GaAs layers have been prepared by both liquid‐phase (LPE) and vapor‐phase (VPE) epitaxial growth techniques. Both techniques allow controlled Zn doping between ∼9×1017 and 3×1019 cm−3. For the LPE technique, the hole concentration (p) is related to the concentration (XZn) in the Ga solution by p=5×1020(XZn)1/2. The surfaces of the LPE layers have a characteristic ripple, in contrast to the optically flat surfaces representative of vapor‐grown layers. Minority‐carrier (electron) diffusion lengths in the LPE layers decrease from 10 to 5 μm with increasing hole concentrations between 9×1017 and 3×1019 cm−3. Diffusion lengths for comparably doped VPE layers are about two times smaller. The room‐temperature photoluminescence characteristics of both types of layers have similar dependences on hole concentration, which can be used as a calibration for nondestructive hole concentration determination. Peak photoluminescence intensities of the two types of layers occur at ∼1×1019 cm−3, and are appro...
TL;DR: In this article, the authors studied the relationship between photoluminescent decay time and dislocation density in undoped liquid phase epitaxial GaP and found that dislocations strongly reduce the photoluminous decay time, especially in samples in which nonradiative recombination times due to shunt paths other than dislocations are long.
Abstract: Correlations between photoluminescent decay time and dislocation density were studied in undoped liquid phase epitaxial GaP. Dislocations strongly reduce the photoluminescent decay time, especially in samples in which nonradiative recombination times (τ0) due to shunt paths other than dislocations are long. Dislocations were found to correspond to photoluminescence dark spots whose diameter is correlated with τ0. A quantitative model is presented, which is in good qualitative agreement with the observed photoluminescent−decay−time−versus−dislocation−density relationships.
TL;DR: In this paper, low-temperature (6 °K) photoluminescence data on Be-implanted GaAs are presented, and a luminescence band centered at 1.4902 eV is related to recombination involving the acceptor.
Abstract: Low‐temperature (6 °K) photoluminescence data on Be‐implanted GaAs are presented. A luminescence band centered at 1.4902 eV is related to recombination involving the Be acceptor. Annealing to 900 °C with Si3N4 encapsulation is shown to optically activate the implanted Be and reorder the lattice. The ionization energy of Be is estimated to be 22±3 meV.
01 Jan 1975
TL;DR: In this article, the use of spectroscopic techniques in the study of catalysts is rapidly increasing and has given a stimulus to research in catalysis, however, these techniques are of restricted applicability.
Abstract: The use of spectroscopic techniques in the study of catalysts is rapidly increasing and has given a stimulus to research in catalysis. All techniques, however, are of restricted applicability; for example, ESR, NMR, reflection spectroscopy, and X-ray electron spectroscopy. Often a number of techniques have to be applied to give the full answer to a problem. The same is true for the technique under discussion in this paper. Luminescence spectroscopy can be helpful for a certain number of systems but is far from being generally applicable. It is, however, specific in the sense that it can solve certain problems, especially in oxidic catalysts, which are very difficult to solve with other techniques.
TL;DR: In this paper, the photoluminescence excitation spectra in some arsenic chalcogenide semiconductors have been explored to low energies, from which absorption coefficients down to 10−1 cm−1 can be derived.
Abstract: The photoluminescence excitation spectra in some arsenic chalcogenide semiconductors have been explored to low energies, from which absorption coefficients down to 10−1 cm−1 can be derived. New evidence is presented for a weak absorption tail in both crystals and glasses, and the data are discussed in terms of an optical transition involving a localized defect state. It is shown that the data support a recent model in which the photoluminescence recombination centre is a shallow state that has a strong electron-phonon coupling.
TL;DR: In this paper, the Na acceptors implanted into ZnSe become optically active after annealing at 500°C and the spectra show a strong Na dependence for both the R series band and the I Y 1 exciton line.
TL;DR: In this article, an analysis of exciton splittings and shifts in the 2K absorption spectra of central GaAs layers in molecular-beam-grown AlxGa1−xAs−GaAs•AlxGa 1−xA structures is presented.
Abstract: From the analysis of exciton splittings and shifts in the 2K absorption spectra of central GaAs layers in molecular‐beam‐grown AlxGa1−xAs‐GaAs‐AlxGa1−xAs structures, the magnitude and sign of the layer stress is deduced. Annealing at 850 °C has little influence on the layer stress although large changes in photoluminescence efficiency are observed. Comparisons with similar LPE‐grown structures and MBE‐grown double‐heterostructure lasers are made.
TL;DR: In this paper, the electrical properties and luminescence spectra of melt-grown CuInSe2 single crystals and the doping of the crystals with intrinsic defects and extrinsic impurities are discussed.
Abstract: We have studied the electrical properties and luminescence spectra of melt-grown CuInSe2 single crystals and the doping of the crystals with intrinsic defects and extrinsic impurities. The preparation and the properties of p-n junctions are also discussed. We find that the low temperature photoluminescence spectra of crystals as-grown or annealed between 400 and 700 C are characteristic of the conductivity type. At 77 K, p-type crystals emit in a band peaked at 1.00 eV (type A spectrum) whereas the emission of n-type crystals peaks at 0.93 eV (type B spectrum). Type A and type B spectra can be interchanged by alternate anneals in minimum or maximum Se pressure. Type B emission dominates the electroluminescence spectrum of p-n junctions. These features are explained by the appearing and disappearing of a donor level as a consequence of annealing in vacuum or in Se atmosphere. We find that Zn and Cd act as donors. Crystals doped with these impurities have electron concentrations above 1018 cm−3. Zn-dopped samples exhibit a very broad recombination band below the bandgap in photoluminescence both at 77 and 300 K.
TL;DR: A tentative scheme for the adsorboluminescence mechanism is proposed in this article, where the luminescence transitions of pure and doped thorium oxide are compared and shown to be distinct.
TL;DR: In this paper, the 4'K photoluminescence spectra of vapor phase epitaxial GaAs (n) layers with doping levels from 1013 to 3×1016 cm−3 have been studied.
Abstract: The 4 °K photoluminescence spectra of vapor phase epitaxial GaAs (n) layers with doping levels from 1013 to 3×1016 cm−3 have been studied. Taking into account the shift of the donor‐acceptor (D‐A) transitions lines versus the neutral donor concentration, it is shown that five shallow acceptor states are involved; their binding energies are determined, and compared with results obtained in other laboratories. Besides carbon (Ea=27 meV), zinc (31 meV), silicon (35 meV), and germanium (41 meV), there appears an acceptor level at 22 meV which had not previously been observed.
TL;DR: In this paper, a pseudo-gas phase photoluminescence spectra of TiO isolated in Ne matrices at 4'°K was obtained and the line shape of the δ and φ emission in the solid is that of a sharp zero-phonon line accompanied by a broad multiphonon sideband.
Abstract: Pseudo‐gas‐phase photoluminescence spectra of TiO isolated in Ne matrices at 4 °K have been obtained. Photoluminescence is induced by laser excitation from the X 3Δ ground state to B 3Π and C 3Δ electronic levels using a cw tunable dye laser and a cw argon ion laser, respectively. Red emission from B 3Π vibrational levels terminating in ground state levels is observed. In addition, the B 3Π (v=0) and B 3Π (v=1) levels have been found to undergo matrix‐induced intersystem relaxation into the b 1Π state. Near‐infrared emission between excited states in the singlet manifold of TiO has been observed and identified as belonging to the δ (b 1Π→a 1Δ) and the φ (b 1Π→d 1Σ+) band systems. Observed δ and φ emission bands are uniformly shifted by −93 cm−1 and +73 cm−1, respectively, from observed or predicted gas phase bandheads. The line shape of the δ and φ emission in the solid is that of a sharp zero‐phonon line accompanied by a broad multiphonon sideband. An additional sharp zero‐phonon emission system, here la...
TL;DR: The photoluminescence of GaSe at 80 °K at high excitation with one-and two-photon pumping was reported in this paper, where the investigated energy range includes the emission localized between the indirect and the direct edges.
Abstract: The photoluminescence of GaSe at 80 °K at high excitation with one- and two-photon pumping is reported. The investigated energy range includes the emission localized between the indirect and the direct edges. Only the free exciton emission is observed at low pumping intensities. As the pumping increases, an extra band (L band) is observed, 20 meV below the free exciton. This band shows stimulation effects and may be ascribed to an exciton-exciton collision process. Photocurrent measurements, resonantly excited at the excitonic wavelength, are in agreement with this conclusion.
On a mesure la photoluminescence de GaSe a 80 °K avec tres haute intensite d'excitation par pompage optique avec un ou deux photons. La region denergie qu'on a etudie est situe entre la gap direct et la gap indirect. A basse intensite on a seulement l'emission lie a la ligne excitonique. A tres haute intensite, on observe une nouvelle bande deplacee B 20 meV au-dessous de l'exciton libre. Cette bande montre un effect de stimulation et on peut attribuer la recombinaison a un processus de collision entres des excitons. Les mesures de photoconductivite obtenus en resonance sont en accord avec cet,te conclusion.
TL;DR: Optical behavior of isoelectronic impurities in AlxGa1−xAs (x=0.37) is investigated in this paper, where a new luminescence line is observed at an energy which is 90 meV below the edge emission peak.
Abstract: Optical behavior of isoelectronic impurities in AlxGa1−xAs (x=0.37) is investigated. Photoluminescence of the samples implanted with N was measured at 2 °K. A new luminescence line is observed at an energy which is 90 meV below the edge emission peak. The integrated intensity of the N‐implanted sample is about five times larger than that of an unimplanted and annealed sample. This is thought to be due to the bound states produced by the N atoms which replace the As atoms.
TL;DR: In this article, the electrical properties and injection electroluminescence in the ZnSe-ZnTe n-p heterojunctions prepared by the liquid phase epitaxial growth from Zn or Bi solution have been studied.
Abstract: The electrical properties and the injection electroluminescence in the ZnSe‐ZnTe n‐p heterojunctions prepared by the liquid‐phase epitaxial growth from Zn or Bi solution have been studied. The prepared heterojunctions consist of a p‐s‐n structure with distributed trap centers at the boundary region. The heterodiodes show an emission band peaking at about 1.94–2.04 eV at room temperature. At 77 K, the spectra generally have four emission bands at 1.98, 2.32, 2.70, and 2.78 eV. The dominance of any one of these emission bands over the others depends upon the preparation conditions. The photoluminescence measurements of the heterojunctions show that the light generation of the heterodiode occurs at the ZnSe branch of the junction: The emission occurs through hole injection from the p‐type ZnTe into the n‐type ZnSe. The best value for the external quantum efficiency of the light emission in the heterodiodes measured by an integrating sphere method is about 4×10−3 photons per electron at 77 K. The relation between the luminescence and the electrical characteristics of the prepared heterodiodes is discussed with tentative band models.