Showing papers on "Sputtering published in 2003"

LnCuO(S,Se,Te)monocrystalline thin film, its manufacturing method, and optical device or electronic device using the monocrystalline thin film

Abstract: Disclosed is a method of producing an LnCuOX single-crystal thin film (wherein Ln is at least one selected from the group consisting of lanthanide elements and yttrium, and X is at least one selected from the group consisting of S, Se and Te), which comprises the steps of growing a base thin film on a single-crystal substrate, depositing an amorphous or polycrystalline LnCuOX thin film on the base thin film to form a laminated film, and then annealing the laminated film at a high temperature of 500° C. or more. While a conventional LnCuOX film produced by growing an amorphous film through a sputtering process under appropriate conditions and then annealing the film at a high temperature was unexceptionally a polycrystalline substance incapable of achieving high emission efficiency and electron mobility required for a material of light-emitting devices or electronic devices, the method of the present invention can grow a thin film with excellent crystallinity suitable as a single crystal to an building black of light-emitting diodes, semiconductor leasers, filed-effect transistors, or a hetero-bipolar transistors.

Aluminum-doped zinc oxide films as transparent conductive electrode for organic light-emitting devices

Abstract: Highly transparent conductive, aluminum-doped zinc oxide (ZnO:Al) films were deposited on glass substrates by midfrequency magnetron sputtering of metallic aluminum-doped zinc target. ZnO:Al films with surface work functions between 3.7 and 4.4 eV were obtained by varying the sputtering conditions. Organic light-emitting diodes (OLEDs) were fabricated on these ZnO:Al films. A current efficiency of higher than 3.7 cd/A, was achieved. For comparison, 3.9 cd/A was achieved by the reference OLEDs fabricated on commercial indium–tin–oxide substrates.

Manufacturing apparatus and method for large-scale production of thin-film solar cells

Abstract: A method of manufacturing improved thin-film solar cells entirely by sputtering includes a high efficiency back contact/reflecting multi-layer containing at least one barrier layer consisting of a transition metal nitride. A copper indium gallium diselenide (Cu(InxGal-X)Se2) absorber layer (X ranging from 1 to approximately 0.7) is co-sputtered from specially prepared electrically conductive targets using dual cylindrical rotary magnetron technology. The band gap of the absorber layer can be graded by varying the gallium content, and by replacing the gallium partially or totally with aluminum. Alternately the absorber layer is reactively sputtered from metal alloy targets in the presence of hydrogen selenide gas. RF sputtering is used to deposit a non-cadmium containing window layer of ZnS. The top transparent electrode is reactively sputtered aluminum doped ZnO. A unique modular vacuum roll-to-roll sputtering machine is described. The machine is adapted to incorporate dual cylindrical rotary magnetron technology to manufacture the improved solar cell material in a single pass.

High power pulsed magnetron sputtered CrNX films

Abstract: Microstructure and macroscopic properties of droplet free CrN films deposited by the recently developed high power pulsed magnetron sputtering (HIPIMS) technique are presented. Magnetron glow discharges with peak power densities reaching 3000 W cm−2 were used to sputter Cr targets in both inert and reactive gas atmospheres. The flux arriving at the substrates consisted of neutrals and ions (approx. 70/30) of the sputtered metal and working gas atoms (Ar) with significantly elevated degree of ionization compared to conventional magnetron sputtering. The high-speed steel and stainless steel substrates were metal ion etched using a bias voltage of −1200 V prior to the deposition of CrN films. The film-to-substrate interfaces, observed by scanning transmission electron microscope cross-sections, were clean and contained no phases besides the film and substrate ones or recrystallized regions. CrN films were grown by reactive HIPIMS at floating potential reaching −160 V. Initial nucleation grains were large compared to conventional magnetron sputtered films, indicating a high adatom mobility in the present case. The films exhibited polycrystalline columnar growth morphology with evidence of renucleation. No intercolumnar voids were observed and the corrosion behavior of the film was superior to arc deposited CrNx. A high density of lattice defects was observed throughout the films due to the high floating potential. A residual compressive stress of 3 GPa and a hardness value of HK0.025=2600 were measured. A low friction coefficient of 0.4 and low wear rates against Al2O3 in these films are explained by the absence of droplets and voids known to contribute to extensive debris generation.

Self-ionized and capacitively-coupled plasma for sputtering and resputtering

Abstract: A DC magnetron sputter reactor for sputtering deposition materials such as tantalum and tantalum nitride, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and capacitively coupled plasma (CCP) sputtering are promoted, either together or alternately, in the same chamber. Also, bottom coverage may be thinned or eliminated by inductively-coupled plasma (ICP) resputtering. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. CCP is provided by a pedestal electrode which capacitively couples RF energy into a plasma. The CCP plasma is preferably enhanced by a magnetic field generated by electromagnetic coils surrounding the pedestal which act to confine the CCP plasma and increase its density.

Hydrogen assisted hdp-cvd deposition process for aggressive gap-fill technology

Abstract: A method of depositing a silicon oxide layer over a substrate having a trench formed between adjacent raised surfaces. In one embodiment the silicon oxide layer is formed in a multistep process that includes depositing a first portion of layer over the substrate and within the trench by forming a high density plasma process that has simultaneous deposition and sputtering components from a first process gas comprising a silicon source, an oxygen source and helium and/or molecular hydrogen with highD/S ratio, for example, 10-20 and, thereafter, depositing a second portion of the silicon oxide layer over the substrate and within the trench by forming a high density plasma process that has simultaneous deposition and sputtering components from a second process gas comprising a silicon source, an oxygen source and molecular hydrogen with a lowerD/S ratio of, for example, 3-10.

High-temperature oxidation resistance of Cr1−xAlxN thin films deposited by reactive magnetron sputtering

Abstract: The thermal stability against oxidation of Cr1−xAlxN films with 0≤x≤0.63 has been investigated by isochronal (15 min) heating in air at various temperatures up to 1173 K. Cr1−xAlxN thin films were deposited by reactive magnetron sputtering from Cr and Al targets in a mixed Ar/N2 atmosphere at a substrate temperature of 573 K. All the films crystallize in the pseudo binary, rocksalt-type cubic structure, showing a (111) preferential orientation. Oxidation proceeds by de-nitridation and the formation of a pseudo binary, mixed, Cr/Al oxide with the corundum structure. The degree of film oxidation was evaluated by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR) and Rutherford backscattering spectroscopy (RBS). The substitution of Cr atoms by Al atoms leads to two oxidation behaviors. Cr1−xAlxN films with low Al content (x 0.2) are more resistant to high temperatures compared to pure CrN. Films with the highest Al content (x=0.63) are stable up to 1173 K due to the formation of an amorphous, aluminum-rich oxide which blocks oxygen diffusion and prevents further film oxidation.

Comparison of the agglomeration behavior of Au and Cu films sputter deposited on silicon dioxide

Abstract: The agglomeration behavior of Cu and Au films each with a thickness of 5 and 50 nm, deposited on thermally grown SiO2 by dc magnetron sputtering, was investigated with scanning electron microscopy. The size of Cu islands formed by agglomeration increased with increasing annealing temperature. Also, the agglomeration of Cu films seem to follow the grain boundary grooving process. On the other hand, Au islands have an identical size at different annealing temperatures. Au films were observed to agglomerate via nucleation of voids followed by the fractal growth of voids. The fractal dimension was determined to be 1.7 indicating that the fractal growth of voids can be described with a diffusion limited aggregation model. Finally, the kinetics of agglomeration of the Au films was described with an Avrami-type equation.

Enhancement of Sputtering Yields Due to C60 versus Ga Bombardment of Ag{111} As Explored by Molecular Dynamics Simulations

Abstract: The mechanism of enhanced desorption initiated by 15-keV C60 cluster ion bombardment of a Ag single crystal surface is examined using molecular dynamics computer simulations. The size of the model microcrystallite of 165 000 atoms and the sophistication of the interaction potential function yields data that should be directly comparable with experiment. The C60 model was chosen since this source is now being used in secondary ion mass spectrometry experiments in many laboratories. The results show that a crater is formed on the Ag surface that is ∼10 nm in diameter, a result very similar to that found for Au3 bombardment of Au. The yield of Ag atoms is ∼16 times larger than for corresponding atomic bombardment with 15-keV Ga atoms, and the yield of Ag3 is enhanced by a factor of 35. The essential mechanistic reasons for these differences is that the C60 kinetic energy is deposited closer to the surface, with the deeply penetrating energy propagation occurring via a nondestructive pressure wave. The number...

Sputtering yield measurements during low energy xenon plasma bombardment

Abstract: The sputtering yields of molybdenum, titanium, beryllium, and carbon have been measured during xenon ion bombardment from a plasma in the energy range between 10 and 200 eV. The erosion rates of Mo, Be, and C are measured both spectroscopically in the plasma and using the standard weight loss technique. Spectroscopic measurements of Ti sputtering yields, where no atomic physics data is available, are normalized to the weight loss measurements. The erosion rates of the metals decrease with the reduced mass of the metal–xenon combination and decrease with the increasing metal’s binding energy, as expected. The erosion results for bombardment of graphite indicate that the sputtering rate of carbon, as atoms, from the surface is insufficient to explain the total carbon weight loss measured. The multiple mechanisms for carbon erosion during plasma bombardment are discussed and the sputter rates of carbon atoms and carbon dimers are presented.

Structural and mechanical properties of chromium nitride, molybdenum nitride, and tungsten nitride thin films

Abstract: Cr–N, Mo–N, and W–N thin films are deposited on silicon by rf reactive magnetron sputtering. The crystallographic phase and residual stress are determined by x-ray diffraction analysis. In each of the three material systems, a hexagonal and a face-centred cubic (fcc) phase are observed. Plasma diagnostics using energy-resolved mass spectroscopy reveal that a significant fraction of the Cr+ ions exhibits a high flux and kinetic energy if the nitrogen partial pressure pN2 is low. These high-energy ions effectively bombard the growing film and a densely packed morphology results. In contrast, in absence of a significant amount of high-energy ions at higher pN2, a columnar crystal morphology is observed by scanning electron microscopy. The grain size strongly depends on the presence of a second phase and on the nitrogen content. The hardness, measured by nanoindentation, increases in every material system if the content of the hexagonal phase increases. Under overstoichiometric conditions, the hardness of fcc compounds decreases. The observed hardness differences are explained by morphological changes and by differences in the electronic structure of the compounds.

Nanoscale effects in focused ion beam processing

Abstract: Focused ion beams with diameters of 8 to 50 nm are used for material processing in the nanoscale regime. In this paper, effects of the ion beam–solid interaction determining the formation of small structures by ion-beam sputtering and chemically assisted material deposition and etching are investigated. In the case of decreasing feature size, angle-dependent sputtering, a non-constant sputter rate, and scattered ions play an important role. The impact on side-wall angle, aspect ratio, and shape of the bottom of the etched structures is discussed. In beam tail regions, these effects will be especially pronounced, leading to material swelling instead of material removal. Ion beam assisted etching and deposition will face additional effects. For small structures, gas depletion becomes a significant drawback. The impact on gas depletion and the competition with sputtering are discussed.

Thin-film solar cells

Abstract: A method of manufacturing improved thin-film solar cells entirely by sputtering includes a high efficiency back contact/reflecting multi-layer containing at least one barrier layer consisting of a transition metal nitride. A copper indium gallium diselenide (Cu(In X Ga 1−X )Se 2 ) absorber layer (X ranging from 1 to approximately 0.7) is co-sputtered from specially prepared electrically conductive targets using dual cylindrical rotary magnetron technology. The band gap of the absorber layer can be graded by varying the gallium content, and by replacing the gallium partially or totally with aluminum. Alternately the absorber layer is reactively sputtered from metal alloy targets in the presence of hydrogen selenide gas. RF sputtering is used to deposit a non-cadmium containing window layer of ZnS. The top transparent electrode is reactively sputtered aluminum doped ZnO. A unique modular vacuum roll-to-roll sputtering machine is described. The machine is adapted to incorporate dual cylindrical rotary magnetron technology to manufacture the improved solar cell material in a single pass.

MOD approach for the growth of epitaxial CeO2 buffer layers on biaxially textured Ni–W substrates for YBCO coated conductors

Abstract: We have grown epitaxial CeO2 buffer layers on biaxially textured Ni–W substrates for YBCO coated conductors using a newly developed metal organic decomposition (MOD) approach. Precursor solution of 0.25 M concentration was spin coated on short samples of Ni–3 at%W (Ni–W) substrates and heat-treated at 1100 °C in a gas mixture of Ar–4%H2 for 15 min. Detailed x-ray studies indicate that CeO2 films have good out-of-plane and in-plane textures with full-width-half-maximum values of 5.8° and 7.5°, respectively. High temperature in situ XRD studies show that the nucleation of CeO2 films starts at 600 °C and the growth completes within 5 min when heated at 1100 °C. SEM and AFM investigations of CeO2 films reveal a fairly dense microstructure without cracks and porosity. Highly textured YSZ barrier layers and CeO2 cap layers were deposited on MOD CeO2-buffered Ni–W substrates using rf-magnetron sputtering. Pulsed laser deposition (PLD) was used to grow YBCO films on these substrates. A critical current, Jc, of about 1.5 MA cm−2 at 77 K and self-field was obtained on YBCO (PLD)/CeO2 (sputtered)/YSZ (sputtered)/CeO2 (spin-coated)/Ni–W.

p-type conduction in codoped ZnO thin films

Abstract: p-type conduction in ZnO thin films was realized by the codoping method. Types of conduction and carrier density in codoped ZnO films were found to be dependent on the oxygen partial pressure ratios in the sputtering gas mixture. The lowest room temperature resistivity was found to be 11.77 Ω cm with a hole density of 9.0×1016 cm−3 for the films deposited in 60% of oxygen partial pressure ratio. Codoped films were found to be c-oriented and highly transparent.

Synthesis of CrN/AlN superlattice coatings using closed-field unbalanced magnetron sputtering process

Abstract: b Abstract Synthesis of CrNyAlN superlattice coatings with various composition (CryAl at.%) and superlattice period (l) using closed- field unbalanced magnetron sputtering method was studied in this work. The coatings were characterized in terms of crystal phase, chemical composition, microstructure and mechanical properties by transmission electron microscopy (TEM), X-ray diffractometry (XRD), glow discharge optical emission spectroscopy and nano-indentation test. Results from TEM and XRD analysis showed that the crystal structure of AlN layer in the CrNyAlN superlattice coatings has a metastable cubic lattice structure rather than an equilibriumhexagonal structure (wurtzite-type), matching coherently with the CrN layer, which has a NaCl type lattice structure. The maximum hardness and plastic deformation resistance (H yE ) of CrNyAlN superlattice film, 32 when the atomic concentration ratio of Cr to Al is 0.98 and the superlattice period (l) is 4.8 nm, are approximately 37 and 0.48 GPa, respectively. These values are 1.6 and 2.5 times higher than those of the CrN single layer coating (23.5 and 0.17 GPa), respectively. These enhancement effects in superlattice films could be attributed to the resistance to dislocation glide across interface between the CrN and AlN layers. 2003 Elsevier Science B.V. All rights reserved.