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Bernd Tillack
Researcher at Innovations for High Performance Microelectronics
Publications - 232
Citations - 3920
Bernd Tillack is an academic researcher from Innovations for High Performance Microelectronics. The author has contributed to research in topics: BiCMOS & Heterojunction bipolar transistor. The author has an hindex of 29, co-authored 220 publications receiving 3632 citations. Previous affiliations of Bernd Tillack include Leibniz Institute for Neurobiology & Korea University.
Papers
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Proceedings ArticleDOI
SiGe HBT technology with f T /f max of 300GHz/500GHz and 2.0 ps CML gate delay
Bernd Heinemann,R. Barth,D. Bolze,J. Drews,Gunter Fischer,A. Fox,O. Fursenko,Thomas Grabolla,Ulrich Haak,D. Knoll,R. Kurps,M. Lisker,Steffen Marschmeyer,H. Rucker,D. Schmidt,J. Schmidt,M. A. Schubert,Bernd Tillack,C. Wipf,D. Wolansky,Yuji Yamamoto +20 more
TL;DR: In this paper, a SiGe HBT technology featuring f T /f max /BV CEO =300GHz/500GHz/1.6V and a minimum CML ring oscillator gate delay of 2.0 ps is presented.
Journal ArticleDOI
Impact of Temperature on the Resistive Switching Behavior of Embedded $\hbox{HfO}_{2}$ -Based RRAM Devices
Christian Walczyk,Damian Walczyk,Thomas Schroeder,T. Bertaud,Malgorzata Sowinska,M. Lukosius,Mirko Fraschke,Dirk Wolansky,Bernd Tillack,Enrique Miranda,Ch. Wenger +10 more
TL;DR: In this article, the authors investigated the conduction mechanism and the resistive switching behavior as a function of temperature in 1 × μm2 TiN/HfO2/Ti/TiN MIM memory devices in a 0.25-μm complementary metal-oxide-semiconductor technology.
Journal ArticleDOI
A 0.13 $\mu{\hbox {m}}$ SiGe BiCMOS Technology Featuring f $_{T} $ /f $_{\max}$ of 240/330 GHz and Gate Delays Below 3 ps
Holger Rucker,Bernd Heinemann,Wolfgang Winkler,R. Barth,J. Borngraber,Juergen Drews,G.G. Fischer,A. Fox,Thomas Grabolla,Ulrich Haak,Dieter Knoll,Falk Korndörfer,Andreas Mai,Steffen Marschmeyer,Peter Schley,Daniel Schmidt,J. Schmidt,Markus Andreas Schubert,K. Schulz,Bernd Tillack,Dirk Wolansky,Yuji Yamamoto +21 more
TL;DR: A 0.13 µm SiGe BiCMOS technology for millimeter wave applications is presented and ring oscillator gate delays of 2.9 ps, low-noise amplifiers for 122 GHz, and LC oscillators for frequencies above 200 GHz are demonstrated.
Proceedings ArticleDOI
Novel collector design for high-speed SiGe:C HBTs
Bernd Heinemann,Holger Rucker,R. Barth,J. Bauer,D. Bolze,E. Bugiel,J. Drews,K.E. Ehwald,Thomas Grabolla,U. Haak,W. Hoppner,D. Knoll,D. Krüger,B. Kuck,R. Kurps,M. Marschmeyer,H.H. Richter,Peter Schley,D. Schmidt,R. Scholz,Bernd Tillack,Wolfgang Winkler,D. Wolnsky,H.-E. Wulf,Yuji Yamamoto,Peter Zaumseil +25 more
TL;DR: In this paper, a collector design for high-frequency SiGe:C HBTs without deep trenches and with low-resistance collectors formed by high-dose ion implantation after shallow trench formation was described.
Proceedings ArticleDOI
A 820GHz SiGe chipset for terahertz active imaging applications
TL;DR: Recent advances in SiGe HBT device technology are used to demonstrate a 820GHz TX/RX chipset for active terahertz imaging applications, opening up new opportunities for highly integrated low-cost silicon TX and RX front-ends.