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Dong Wang

Researcher at Chinese Academy of Sciences

Publications -  586
Citations -  13460

Dong Wang is an academic researcher from Chinese Academy of Sciences. The author has contributed to research in topics: Computer science & Medicine. The author has an hindex of 49, co-authored 491 publications receiving 9970 citations. Previous affiliations of Dong Wang include University of Science and Technology of China & Shanghai University.

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Construction and repair of highly ordered 2D covalent networks by chemical equilibrium regulation.

TL;DR: The construction of well-ordered 2D covalent networks via the dehydration of di-borate aromatic molecules was successfully realized through introducing a small amount of water into a closed reaction system to regulate the chemical equilibrium.
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Microscopic Investigation of Grain Boundaries in Organolead Halide Perovskite Solar Cells

TL;DR: The c-AFM measurements observed that higher photocurrents flow through GBs when a low bias overcomes the barrier created by the band bending, indicating that GBs act as effective charge dissociation interfaces and photocurrent transduction pathways rather than recombination sites.
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Oriented Covalent Organic Framework Film on Graphene for Robust Ambipolar Vertical Organic Field-Effect Transistor

TL;DR: In this paper, the authors reported a solvothermal synthesis of a COFTFPy-PPDA film on single-layer graphene (SLG), which was constructed via covalent imine-type linkage by employing 1,3,6,8-tetrakis(p- formylphenyl)pyrene (TFPy) and p-phenylenediamine (PPDA) as building blocks.
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Interfacial synthesis of ordered and stable covalent organic frameworks on amino-functionalized carbon nanotubes with enhanced electrochemical performance

TL;DR: NH2-f-MWCNT@COFTTA-DHTA showed improved electrochemical performance as a capacitive electrode material and improved electrical conductivity in the presence of MWCNT skeletons.
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Vapour-based processing of hole-conductor-free CH3NH3PbI3 perovskite/C60 fullerene planar solar cells

TL;DR: In this paper, a new sequential-vapourdeposition method is demonstrated for the growth of high quality CH3NH3PbI3 perovskite films.