F
F. Allain
Researcher at University of Grenoble
Publications - 2
Citations - 83
F. Allain is an academic researcher from University of Grenoble. The author has contributed to research in topics: Nanowire & Field-effect transistor. The author has an hindex of 1, co-authored 2 publications receiving 56 citations.
Papers
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Proceedings ArticleDOI
Vertically stacked-NanoWires MOSFETs in a replacement metal gate process with inner spacer and SiGe source/drain
Sylvain Barraud,V. Lapras,M.-P. Samson,L. Gaben,Laurent Grenouillet,V. Maffini-Alvaro,Yves Morand,J. Daranlot,N. Rambal,B. Previtalli,Shay Reboh,Claude Tabone,R. Coquand,E. Augendre,Olivier Rozeau,J.M. Hartmann,C. Vizioz,Christian Arvet,Patricia Pimenta-Barros,Nicolas Posseme,Virginie Loup,C. Comboroure,C. Euvrard,V. Balan,I. Tinti,G. Audoit,Nicolas Bernier,David Cooper,Zineb Saghi,F. Allain,A. Toffoli,O. Faynot,Maud Vinet +32 more
TL;DR: In this article, vertically stacked horizontal Si nano-wire (NW) /-MOSFETs fabricated with a replacement metal gate (RMG) process are integrated with inner spacers and SiGe source-drain (S/D) stressors.
Proceedings ArticleDOI
Comparative experimental study of junctionless and inversion-mode nanowire transistors for analog applications
D. Bosch,J.-P. Colinge,J. Lugo,A. Tataridou,Christoforos G. Theodorou,Xavier Garros,Sylvain Barraud,Joris Lacord,Benoit Sklenard,Mikael Casse,Laurent Brunet,Perrine Batude,Claire Fenouillet-Beranger,D. Lattard,J. Cluzel,F. Allain,R. Nait Youcef,J.M. Hartmann,C. Vizioz,G. Audoit,F. Balestra,Francois Andrieu +21 more
TL;DR: In this article, junction less and inversion-mode monocrystalline nanowire nMOSFETs were fabricated down to L=18nm gate length and W=20nm width.