Giorgio Vannini

TL;DR: In this article, the authors present a new modeling approach accounting for the nonlinear description of low-frequency dispersive effects (due to thermal phenomena and traps) affecting electron devices, and a large set of experimental results, oriented to microwave GaN power amplifier design, is provided to give an exhaustive validation under realistic device operation.

TL;DR: In this article, a modified Volterra series is proposed to model nonlinear dynamic systems under the assumption of short-term nonlinear memory effects, and the modified series enables a single-fold nonlinear convolution integral to be adopted also in the presence of strong nonlinearities.

TL;DR: A new original approach to power amplifier design is presented, which is mainly based on low-frequency nonlinear empirical electron device (ED) characterization, which enables the same level of accuracy provided by expensive load-pull measurement systems to be obtained through a relatively simple and low-cost setup.

TL;DR: In this paper, a nonlinear integral model (NIM) is proposed for the large-signal dynamic response of an electron device to be directly computed on the basis of data obtained either by conventional measurements or by physics-based numerical simulations.

TL;DR: In this article, an empirical modeling approach is presented to accurately predict deviations between static and dynamic drain current characteristics caused by dispersive effects in III-V devices operating at microwave frequencies.