THE DESIGN AND ANALYSIS OF EXPERIMENTS. By Oscar Kempthorne. New York, John Wiley and Sons, Inc., 1952. 631 pp. $8.50. This book by a teacher of statistics (as well as a consultant for \"experimenters\") is a comprehensive study of the philosophical background for the statistical design of experiment. It is necessary to have some facility with algebraic notation and manipulation to be able to use the volume intelligently. The problems are presented from the theoretical point of view, without such practical examples as would be helpful for those not acquainted with mathematics. The mathematical justification for the techniques is given. As a somewhat advanced treatment of the design and analysis of experiments, this volume will be interesting and helpful for many who approach statistics theoretically as well as practically. With emphasis on the \"why,\" and with description given broadly, the author relates the subject matter to the general theory of statistics and to the general problem of experimental inference. MARGARET J. ROBERTSON

The Design and Analysis of Experiments

正しい方法がわかる臨床基本手技 : from the New England journal of medicine

New generation adsorbents for water treatment.

Large-scale electrolysis of water for hydrogen generation requires better catalysts to lower the kinetic barriers associated with the oxygen evolution reaction (OER). Although most OER catalysts are based on crystalline mixed-metal oxides, high activities can also be achieved with amorphous phases. Methods for producing amorphous materials, however, are not typically amenable to mixed-metal compositions. We demonstrate that a low-temperature process, photochemical metal-organic deposition, can produce amorphous (mixed) metal oxide films for OER catalysis. The films contain a homogeneous distribution of metals with compositions that can be accurately controlled. The catalytic properties of amorphous iron oxide prepared with this technique are superior to those of hematite, whereas the catalytic properties of a-Fe100-y-zCoyNizOx are comparable to those of noble metal oxide catalysts currently used in commercial electrolyzers.

https://science.sciencemag.org/content/sci/early/2013/03/27/science.1233638.full.pdf

Photochemical Route for Accessing Amorphous Metal Oxide Materials for Water Oxidation Catalysis

Control of spontaneously emitted light lies at the heart of quantum optics. It is essential for diverse applications ranging from miniature lasers and light-emitting diodes, to single-photon sources for quantum information, and to solar energy harvesting. To explore such new quantum optics applications, a suitably tailored dielectric environment is required in which the vacuum fluctuations that control spontaneous emission can be manipulated. Photonic crystals provide such an environment: they strongly modify the vacuum fluctuations, causing the decay of emitted light to be accelerated or slowed down, to reveal unusual statistics, or to be completely inhibited in the ideal case of a photonic bandgap. Here we study spontaneous emission from semiconductor quantum dots embedded in inverse opal photonic crystals. We show that the spectral distribution and time-dependent decay of light emitted from excitons confined in the quantum dots are controlled by the host photonic crystal. Modified emission is observed over large frequency bandwidths of 10%, orders of magnitude larger than reported for resonant optical microcavities. Both inhibited and enhanced decay rates are observed depending on the optical emission frequency, and they are controlled by the crystals’ lattice parameter. Our experimental results provide a basis for all-solid-state dynamic control
of optical quantum systems.

Controlling the dynamics of spontaneous emission from quantum dots by photonic crystals

Improving group recommendation using deep collaborative filtering approach

Meta-QTLs, ortho-MetaQTLs and candidate genes for grain Fe and Zn contents in wheat (Triticum aestivum L.)

The Metal Organic Chemical Vapour Deposition (MOCVD) grown n-type Gallium nitride (GaN) layers on sapphire (0 0 0 1) substrates have been irradiated at low and room temperatures with 40 MeV Li3+ ions at the fluence of 1 × 1013 ions cm−2. Irradiated samples were characterised by using X-ray diffraction (XRD), photoluminescence (PL), Raman spectroscopy and atomic force microscopy (AFM). XRD results show that the formation of Ga2O3 has been observed upon irradiation. This is due to interface mixing of GaN/Al2O3, at both temperatures. Also the GaN (0 0 0 2) peak splits into two at low temperature irradiation. PL measurements show a yellow emission band shift towards blue band side upon irradiation at 77 K. Raman studies indicate that the lattice disorder is high at room temperature irradiation compared to low temperature irradiation. AFM images indicate the increasing surface roughness after ion irradiation at room temperature when compared to pristine GaN and low temperature irradiated GaN. These observations are discussed in detail with the use of complementary techniques.

Investigations on 40 MeV Li3+ ions irradiated GaN epilayers

Ab initio prediction of half-metallic ferromagnetism in Zn(TM)O2 (TM = Cr, Mn, Fe, Co, Ni) compounds

Liquid-encapsulated Czochralski (LEC) grown undoped semi-insulating (SI) gallium arsenide (GaAs) single crystals have been implanted with 120 keV nitrogen ion (N+) of fluences 1×1014, 1×1015 and 1×10 16 cm −2 . Raman scattering studies of the as-grown and implanted samples have been carried out at room temperature and analyzed. It is observed that the A1(LO) phonon mode frequency decreases with increase of fluence, whereas the full width at half maximum (FWHM) increases and the area under the peak decreases. All these effects are due to the lattice disorder induced by the implantation. The implanted samples have been annealed at 673 K. They show a partial recovery of the A1(LO) phonon mode frequency and the FWHM which tend towards the unimplanted values due to partial annealing of the implantation-induced lattice damage. The post-implantation annealed samples show an increase of the area under the peak due to the enhanced Raman scattering caused by the surface roughness which was caused by the implantation. This increase in area was less at high fluences because of the residual lattice damage induced by the implantation, which caused the decrease of the area.

Jitendra Kumar

Papers

Improving group recommendation using deep collaborative filtering approach

Meta-QTLs, ortho-MetaQTLs and candidate genes for grain Fe and Zn contents in wheat (Triticum aestivum L.)

Investigations on 40 MeV Li3+ ions irradiated GaN epilayers

Ab initio prediction of half-metallic ferromagnetism in Zn(TM)O2 (TM = Cr, Mn, Fe, Co, Ni) compounds

Raman scattering studies on low-energy nitrogen-implanted semi-insulating GaAs