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Jitendra Kumar

Researcher at Indian Institutes of Technology

Publications -  707
Citations -  7996

Jitendra Kumar is an academic researcher from Indian Institutes of Technology. The author has contributed to research in topics: Biology & Medicine. The author has an hindex of 37, co-authored 533 publications receiving 6363 citations. Previous affiliations of Jitendra Kumar include Indian Institute of Technology Dhanbad & Dongguk University.

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Photoperiod modulates oestrogen status, insulin interposed glucose uptake and connexin-43 in testes of golden hamster, Mesocricetus auratus

TL;DR: It can be inferred that photoperiod modulates the circulatory oestrogen level, along with gap junction protein and apoptosis markers expression in testes and harmonizes the energy homeostasis involved in reproductive maintenance for seasonality of golden hamster.
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Cerium induced Raman spectra of (Ba0.5Sr0.5)(Fe1-xCex)O3-δ (x = 0 - 1)

TL;DR: The effect of cerium insertion in sol-gel derived (Ba 0.5Sr0.5)O3-δ powders has been investigated by Raman spectroscopy and findings correlated with crystalline phases present as discussed by the authors.
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Semianalytical Solution for Nonequilibrium Suspended Sediment Transport in Open Channels with Concentration-Dependent Settling Velocity

TL;DR: In this article , a steady two-dimensional suspended sediment transport model in an open channel for turbulent flow-carrying sediments was developed, where the Laplace transform-based homotopy analysis method (Laplace-HAM) and the method of lines-based HAM (MOL-HAM).
Journal Article

Effect of integrated nutrient management on herbage yield of black henbane (Hyoscyamus niger L.)

TL;DR: A field experiment was carried out at Medicinal Plants Research and Development Centre (MRDC), G.B. Pant University of Agriculture and Technology, Pantnagar, during Rabi season of 2008-09 and 2009-10 to quantify the effect of integrated nutrient management (INM) on herbage yield of black henbane ( Hyoscyamus niger L.) as discussed by the authors.
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Electrical characteristics of 100 MeV 28Si implanted LEC grown GaAs〈100〉

TL;DR: In this paper, in-situ resistance measurements were carried out for samples implanted with 28Si ion at various fluences using four probe and Hall measurements, and the implanted samples (100 MeV 1.5 × 10 13 cm −2 ) were annealed at different temperatures in the range of 200-400°C and characterised using Hall measurements at different temperature values (300-380 K).