J
John W. Palmour
Researcher at Durham University
Publications - 209
Citations - 9172
John W. Palmour is an academic researcher from Durham University. The author has contributed to research in topics: Silicon carbide & Diode. The author has an hindex of 46, co-authored 202 publications receiving 8835 citations. Previous affiliations of John W. Palmour include Cree Inc. & Ioffe Institute.
Papers
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Journal ArticleDOI
Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide
G.Y. Chung,Chin-Che Tin,John R. Williams,K. McDonald,R.K. Chanana,Robert A. Weller,Sokrates T. Pantelides,Leonard C. Feldman,O. W. Holland,M.K. Das,John W. Palmour +10 more
TL;DR: In this article, the authors demonstrate that the effective channel mobility of lateral, inversion-mode 4H-SiC MOSFETs is increased significantly after passivation of SiC/SiO/sub 2/ interface states near the conduction band edge by high temperature anneals in nitric oxide.
Journal ArticleDOI
High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates
Scott Sheppard,K. Doverspike,W.L. Pribble,Scott Allen,John W. Palmour,L.T. Kehias,T.J. Jenkins +6 more
TL;DR: In this paper, the performance of high-power GaN/Al/sub 0.86/N high-electron mobility transistors (HEMTs) fabricated on semi-insulating (SI) 4H-SiC substrates is reported.
Journal ArticleDOI
Status and prospects for SiC power MOSFETs
TL;DR: In this article, the authors review the evolution of SiC power MOSFETs between 1992 and the present, discuss the current status of device development, identify the critical fabrication issues, and assess the prospects for continued progress and eventual commercialization.
Journal ArticleDOI
Silicon carbide high-power devices
Charles E. Weitzel,John W. Palmour,C.H. Carter,K. Moore,K.K. Nordquist,S. Allen,Christine Thero,Mohit Bhatnagar +7 more
TL;DR: In this paper, a wide variety of SiC devices are compared to that of similar Si and GaAs devices and to theoretically expected results, and the performance of these devices is compared to the expected results.
Patent
Method of preparing silicon carbide surfaces for crystal growth
TL;DR: In this paper, a substantially planar surface on a monocrystalline silicon carbide crystal is formed by exposing the substantiallyplanar surface to an etching plasma until any surface or subsurface damage caused by any mechanical preparation of the surface is substantially removed.