J
Jongwook Jeon
Researcher at Konkuk University
Publications - 97
Citations - 696
Jongwook Jeon is an academic researcher from Konkuk University. The author has contributed to research in topics: Noise (electronics) & Noise figure. The author has an hindex of 11, co-authored 85 publications receiving 490 citations. Previous affiliations of Jongwook Jeon include Seoul National University & Samsung.
Papers
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Proceedings ArticleDOI
Effect of polysilicon gate on the flatband voltage shift and mobility degradation for ALD-Al/sub 2/O/sub 3/ gate dielectric
J. H. Lee,Kyoung-Min Koh,Nae-In Lee,Mann Ho Cho,Y.K. Ki,Jongwook Jeon,Kyung-hwan Cho,H.S. Shin,M. Kim,K. Fujihara,H. K. Kang,Joo Tae Moon +11 more
TL;DR: Al/sub 2/O/sub 3/ (EOT=227 /spl Aring/) gate dielectric layer formed by Atomic Layer Deposition (ALD) process have been characterized for sub-100 nm CMOS devices as discussed by the authors.
Journal ArticleDOI
A Simple Figure of Merit of RF MOSFET for Low-Noise Amplifier Design
Ickhyun Song,Jongwook Jeon,Hee-Sauk Jhon,Junsoo Kim,Byung-Gook Park,Jong Duk Lee,Hyungcheol Shin +6 more
TL;DR: In this article, the authors proposed that gm 2/ID, which has been used as the figure of merit (FoM) of MOSFETs for analog amplifiers, can also be used as a FoM for low-noise amplifier (LNA) performance.
Journal ArticleDOI
Prediction of Process Variation Effect for Ultrascaled GAA Vertical FET Devices Using a Machine Learning Approach
TL;DR: An accurate and efficient machine learning (ML) approach which predicts variations in key electrical parameters using process variations (PVs) from ultrascaled gate-all-around (GAA) vertical FET (VFET) devices with the same degree of accuracy, as well as improved efficiency compared to a 3-D stochastic TCAD simulation.
Journal ArticleDOI
8mW 17/24 GHz dual-band CMOS low-noise amplifier for ISM-band application
Hee-Sauk Jhon,Ickhyun Song,Jongwook Jeon,Ho Yub Jung,Minsuk Koo,Byung-Gook Park,Joohun Lee,Hyundong Shin +7 more
TL;DR: In this article, a 17/24 GHz dual-band CMOS low-noise amplifier (LNA) for ISM-band application is presented, which employs a positive feedback transmission-line-based LCladder network to obtain dualband operation and reduce power consumption.
Journal ArticleDOI
An analytical channel thermal noise model for deep-submicron MOSFETs with short channel effects
TL;DR: In this article, an analytical channel thermal noise model for short channel MOSFETs is derived, which takes into account the channel length modulation, velocity saturation, and carrier heating effects in the gradual channel region.