J
Jun Suda
Researcher at Nagoya University
Publications - 384
Citations - 6165
Jun Suda is an academic researcher from Nagoya University. The author has contributed to research in topics: Epitaxy & Molecular beam epitaxy. The author has an hindex of 36, co-authored 362 publications receiving 5095 citations. Previous affiliations of Jun Suda include Panasonic & Chukyo University.
Papers
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Journal ArticleDOI
Negative-U System of Carbon Vacancy in 4H-SiC
Nguyen Tien Son,Xuan Thang Trinh,Lars Løvlie,Bengt Gunnar Svensson,Koutarou Kawahara,Jun Suda,Tsunenobu Kimoto,Takahide Umeda,Junichi Isoya,Takahiro Makino,Takeshi Ohshima,Erik Janzén +11 more
TL;DR: Using EPR and deep-level transient spectroscopy, it is shown that the two most common defects in as-grown 4H-SiC--the Z(1/2) lifetime-limiting defect and the EH(7) deep defect--are related to the double acceptor and single donor levels of V(C), respectively.
Journal ArticleDOI
Lifetime-killing defects in 4H-SiC epilayers and lifetime control by low-energy electron irradiation
TL;DR: In this article, a correlation study between lifetime and various deep levels was conducted to identify the Z1/2 and/or EH6/7 centers as effective recombination centers.
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Nearly Ideal Current–Voltage Characteristics of Schottky Barrier Diodes Formed on Hydride-Vapor-Phase-Epitaxy-Grown GaN Free-Standing Substrates
Jun Suda,Kazuki Yamaji,Yuichirou Hayashi,Tsunenobu Kimoto,Kenji Shimoyama,Hideo Namita,Satoru Nagao +6 more
TL;DR: The currentvoltage characteristics of Schottky barrier diodes formed on GaN(0001) free-standing substrates with net donor concentrations of 7.6×1015-1.4×1017 cm-3 are discussed in this article.
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Ultrahigh-Voltage SiC p-i-n Diodes With Improved Forward Characteristics
TL;DR: In this paper, the forward characteristics of SiC p-i-n diodes are significantly improved by carrier-lifetime enhancement, and the differential on-resistance is inversely proportional to the square root of current density.
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Zirconium Diboride (0001) as an Electrically Conductive Lattice-Matched Substrate for Gallium Nitride.
Hiroyuki Kinoshita,Shigeki Otani,Satoshi Kamiyama,Hiroshi Amano,Isamu Akasaki,Jun Suda,Hiroyuki Matsunami +6 more
TL;DR: In this paper, the authors proposed Zirconium diboride (ZrB2) as an electrically conductive lattice-matched substrate for GaN.