다중혈관 관상동맥 환자에서 y-문합을 이용하여 양쪽 내흉동맥만을 사용한 우회술의 조기 성적

Graphene based materials: Past, present and future

Molecular self-assembly is the spontaneous association of molecules under equilibrium conditions into stable, structurally well-defined aggregates joined by noncovalent bonds. Molecular self-assembly is ubiquitous in biological systems and underlies the formation of a wide variety of complex biological structures. Understanding self-assembly and the associated noncovalent interactions that connect complementary interacting molecular surfaces in biological aggregates is a central concern in structural biochemistry. Self-assembly is also emerging as a new strategy in chemical synthesis, with the potential of generating nonbiological structures with dimensions of 1 to 10(2) nanometers (with molecular weights of 10(4) to 10(10) daltons). Structures in the upper part of this range of sizes are presently inaccessible through chemical synthesis, and the ability to prepare them would open a route to structures comparable in size (and perhaps complementary in function) to those that can be prepared by microlithography and other techniques of microfabrication.

Molecular self-assembly and nanochemistry: A chemical strategy for the synthesis of nanostructures

Glacial melting in the Tibetan Plateau affects the water resources of millions of people. This study finds that—partly owing to changes in atmospheric circulations and precipitation patterns—the most intensive glacier shrinkage is in the Himalayan region, whereas glacial retreat in the Pamir Plateau region is less apparent.

Different glacier status with atmospheric circulations in Tibetan Plateau and surroundings

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

IoT applications are increasingly becoming widespread with more stringent system requirements. In this work, we demonstrate a nature-inspired integration and packaging technology that achieves self-powered multi-functional systems with optimized performance and small footprint area. The integration technique is based on bifacial usage of the substrate where devices on both sides are interconnected via through-substrate-vias. Multiple substrates are then integrated and folded into a 3D architecture using side-interlocks following a puzzle-like fashion. On the outer sides of the 3D architecture, sensors, RF devices and energy harvesters are integrated while on the inner faces, a solid-state battery in addition to power- management and data-management circuitry are embedded. To package the system, a polymeric encapsulant is used to protect the inner circuitry and enhance the mechanical resilience of the system. Finally, the system is used to send the collected data wirelessly to a phone using an embedded Bluetooth Low Energy unit.

/pdf/multi-dimensional-integration-and-packaging-of-devices-for-3ehyezryrb.pdf

Multi-Dimensional Integration and Packaging of Devices for Internet-of-Things Applications

Flexible Electronics: Thin PZT‐Based Ferroelectric Capacitors on Flexible Silicon for Nonvolatile Memory Applications (Adv. Electron. Mater. 6/2015)

We present a conventional micro-fabrication based thin film vertical sidewall (spacer) width controlled nano-gap fabrication process to create arrays of nanopatterns for high density precisely positioned self-assembled nanoelectronics device integration. We have used conventional optical lithography to create base structures and then silicon nitride (Si 3 N 4 ) based spacer formation via reactive ion etching. Control of Si 3 N 4 thickness provides accurate control of vertical sidewall (spacer) besides the base structures. Nano-gaps are fabricated between two adjacent spacers whereas the width of the gap depends on the gap between two adjacent base structures minus width of adjacent spacers. We demonstrate the process using a 32 nm node complementary metal oxide semiconductor (CMOS) platform to show its compatibility for very large scale heterogeneous integration of top-down and bottom-up fabrication as well as conventional and selfassembled nanodevices. This process opens up clear opportunity to overcome the decade long challenge of high density integration of self-assembled devices with precise position control.

Sub-15 nm nano-pattern generation by spacer width control for high density precisely positioned self-assembled device nanomanufacturing

https://onlinelibrary.wiley.com/doi/pdf/10.1002/smll.201970051

Environmental Monitoring: Noninvasive Featherlight Wearable Compliant “Marine Skin”: Standalone Multisensory System for Deep-Sea Environmental Monitoring (Small 10/2019)

The field of textile electronics aims to use clothing materials and fabrics as an active or activated substrate for electronics. This is an intriguing idea for researchers, however, the field comes with its own challenges and design requirements. A textile electronic system should be functional, reliable, safe and affordable while maintaining the original utility of the fabric. This review paper presents a comprehensive picture of prospects, advances, challenges and opportunities of textile electronics. It also offers a critical outlook to advance the field for technology translation.

/pdf/textile-electronics-prospects-advances-challenges-and-sift4wpnnf.pdf

Muhammad Mustafa Hussain

Papers

Multi-Dimensional Integration and Packaging of Devices for Internet-of-Things Applications

Flexible Electronics: Thin PZT‐Based Ferroelectric Capacitors on Flexible Silicon for Nonvolatile Memory Applications (Adv. Electron. Mater. 6/2015)

Sub-15 nm nano-pattern generation by spacer width control for high density precisely positioned self-assembled device nanomanufacturing

Environmental Monitoring: Noninvasive Featherlight Wearable Compliant “Marine Skin”: Standalone Multisensory System for Deep-Sea Environmental Monitoring (Small 10/2019)

Textile Electronics – Prospects, Advances, Challenges and Opportunities