M
Muhammad Mustafa Hussain
Researcher at King Abdullah University of Science and Technology
Publications - 333
Citations - 6943
Muhammad Mustafa Hussain is an academic researcher from King Abdullah University of Science and Technology. The author has contributed to research in topics: Silicon & Metal gate. The author has an hindex of 39, co-authored 330 publications receiving 5355 citations. Previous affiliations of Muhammad Mustafa Hussain include University of California, Berkeley & SEMATECH.
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Proceedings ArticleDOI
Alternative approaches for high-k/metal gate CMOS: Low temperature process (gate last) and SiGe channel
Chanro Park,Muhammad Mustafa Hussain,K. Tateiwa,Jiacheng Huang,J. Lin,T. Ngai,S. Lian,K. Rader,B. Taylor,Paul Kirsch,R. Jammy +10 more
TL;DR: In this article, a comprehensive materials set has been fabricated and characterized to address the challenging issues in both gate first and gate last HK/MG CMOS, where metal gate thermal budget and channel composition are shown to be effective methods to engineer pMetal effective work function for gate last and gate first, respectively.
Journal ArticleDOI
Invited) Wavy Channel TFT Architecture for High Performance Oxide Based Displays
Journal ArticleDOI
Role of metal/silicon semiconductor contact engineering for enhanced output current in micro-sized microbial fuel cells
TL;DR: In this paper, contact engineering plays an important role to extract the maximum performance from energy harvesters like microbial fuel cells (MFCs), and the authors experimented with Schottky and Ohmic methods of fabricating contact areas on silicon in an MFC contact material study.
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SiSn diodes: Theoretical analysis and experimental verification
TL;DR: In this article, the authors reported a theoretical analysis and experimental verification of change in band gap of silicon lattice due to the incorporation of tin (Sn), and they formed SiSn ultra-thin film on the top surface of a 4 in. silicon wafer using thermal diffusion of Sn.
Proceedings ArticleDOI
Dual work function high-k/Metal Gate CMOS FinFETs
Muhammad Mustafa Hussain,Casey Smith,P. Kalra,Ji-Woon Yang,G. Gebara,B. Sassman,Paul Kirsch,Prashant Majhi,Seung-Chul Song,R. Harris,Hsing-Huang Tseng,R. Jammy +11 more
TL;DR: In this paper, a set of complementary metal oxide semiconductor (CMOS) FinFET devices with two different high-k/metal gate stacks of dual work function has been integrated on the same wafer to overcome the integration complexity.