M
Muhammad Mustafa Hussain
Researcher at King Abdullah University of Science and Technology
Publications - 333
Citations - 6943
Muhammad Mustafa Hussain is an academic researcher from King Abdullah University of Science and Technology. The author has contributed to research in topics: Silicon & Metal gate. The author has an hindex of 39, co-authored 330 publications receiving 5355 citations. Previous affiliations of Muhammad Mustafa Hussain include University of California, Berkeley & SEMATECH.
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Patent
Cylindrical-shaped nanotube field effect transistor
TL;DR: In this paper, a cylindrical-shaped nanotube FET was proposed for silicon substrates, where an inner gate electrode couples to a region of the gate stack inside the inner circumference of the ring.
Proceedings Article
Gate first high-k/metal gate stacks with zero SiO x interface achieving EOT=0.59nm for 16nm application
Jiacheng Huang,Dawei Heh,Prasanna Sivasubramani,Paul Kirsch,Gennadi Bersuker,David Gilmer,Manuel Quevedo-Lopez,Muhammad Mustafa Hussain,Prashant Majhi,P. Lysaght,Hokyung Park,Niti Goel,Chadwin D. Young,Chanro Park,C. Park,M. Cruz,V. Diaz,P. Y. Hung,J. Price,H.-H. Tseng,Raj Jammy +20 more
TL;DR: Gate first 0.59 nm EOT HfOx/metal gate stacks for 16 nm node application are demonstrated for the first time and the improved scalability of ZIL H fO x vs. exotic higher-k is compared and demonstrated.
Journal ArticleDOI
Simulation Study of a 3-D Device Integrating FinFET and UTBFET
TL;DR: By integrating 3-D nonplanar fins and 2-D ultrathin bodies, wavy FinFETs merge two formerly competing technologies on a silicon-on-insulator platform to deliver enhanced transistor performance compared with conventional trigate FinFets with unprecedented levels of chip-area efficiency.
Journal ArticleDOI
Printed Organic and Inorganic Electronics: Devices To Systems
TL;DR: Progress in CMOS technology and applications is reviewed, including challenges faced and opportunities revealed.
Journal ArticleDOI
Gate-First Integration of Tunable Work Function Metal Gates of Different Thicknesses Into High- $k$ /Metal Gates CMOS FinFETs for Multi- $V_{\rm Th}$ Engineering
Muhammad Mustafa Hussain,Casey Smith,H. R. Harris,Chadwin D. Young,Hsing-Huang Tseng,R. Jammy +5 more
TL;DR: In this paper, gate-first integration of tunable work function metal gates of different thicknesses (3-20 nm) into high-k/metal gates CMOS FinFETs was demonstrated.