M
Muhammad Mustafa Hussain
Researcher at King Abdullah University of Science and Technology
Publications - 333
Citations - 6943
Muhammad Mustafa Hussain is an academic researcher from King Abdullah University of Science and Technology. The author has contributed to research in topics: Silicon & Metal gate. The author has an hindex of 39, co-authored 330 publications receiving 5355 citations. Previous affiliations of Muhammad Mustafa Hussain include University of California, Berkeley & SEMATECH.
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Patent
Methods for nanoscale feature imprint molding
TL;DR: In this article, the methods for fabricating nanoscale features are disclosed, where the first layer may be a silicon layer and may subsequently be etched, exposing edges of the second and third layers.
Proceedings ArticleDOI
Highly Manufacturable 45nm LSTP CMOSFETs Using Novel Dual High-k and Dual Metal Gate CMOS Integration
Seung-Chul Song,Zhibo Zhang,Muhammad Mustafa Hussain,Craig Huffman,Joel Barnett,S.H. Bae,H.-J. Li,Prashant Majhi,Chanro Park,B.S. Ju,Hong-bae Park,C. Y. Kang,Rino Choi,Peter Zeitzoff,H-H. Tseng,Byoung Hun Lee,Raj Jammy +16 more
TL;DR: In this article, dual high-k and dual metal gate (DHDMG) CMOSFETs meeting the device targets of 45nm low stand-by power (LSTP) node were demonstrated.
Journal ArticleDOI
Flexible High- $\kappa$ /Metal Gate Metal/Insulator/Metal Capacitors on Silicon (100) Fabric
TL;DR: In this paper, a simple fabrication flow to build metal-insulator-metal capacitors, key components of dynamic random access memory, on a mechanically flexible silicon (100) fabric was demonstrated.
Journal ArticleDOI
Integration of dual metal gate CMOS on high-k dielectrics utilizing a metal wet etch process
Zhibo Zhang,Seung-Chul Song,Craig Huffman,Muhammad Mustafa Hussain,Joel Barnett,Naim Moumen,Husam N. Alshareef,Prashant Majhi,J.H. Sim,S.H. Bae,Byoung Hun Lee +10 more
TL;DR: In this paper, a plasma etch process is developed to etch TaSiN and Ru dual metal gate stacks simultaneously on the same wafer, which can be applied to various metal gate materials.
Proceedings ArticleDOI
Design and analysis of compact ultra energy-efficient logic gates using laterally-actuated double-electrode NEMS
TL;DR: A comprehensive analytical framework is developed to model different properties of these devices by solving the Euler-Bernoulli's beam equation and it is shown that by ignoring the non-uniformity of the electrostatic force distribution, the existing models “underestimate” the actual value of V pull-in and Vpull-out.