다중혈관 관상동맥 환자에서 y-문합을 이용하여 양쪽 내흉동맥만을 사용한 우회술의 조기 성적

Graphene based materials: Past, present and future

Molecular self-assembly is the spontaneous association of molecules under equilibrium conditions into stable, structurally well-defined aggregates joined by noncovalent bonds. Molecular self-assembly is ubiquitous in biological systems and underlies the formation of a wide variety of complex biological structures. Understanding self-assembly and the associated noncovalent interactions that connect complementary interacting molecular surfaces in biological aggregates is a central concern in structural biochemistry. Self-assembly is also emerging as a new strategy in chemical synthesis, with the potential of generating nonbiological structures with dimensions of 1 to 10(2) nanometers (with molecular weights of 10(4) to 10(10) daltons). Structures in the upper part of this range of sizes are presently inaccessible through chemical synthesis, and the ability to prepare them would open a route to structures comparable in size (and perhaps complementary in function) to those that can be prepared by microlithography and other techniques of microfabrication.

Molecular self-assembly and nanochemistry: A chemical strategy for the synthesis of nanostructures

Glacial melting in the Tibetan Plateau affects the water resources of millions of people. This study finds that—partly owing to changes in atmospheric circulations and precipitation patterns—the most intensive glacier shrinkage is in the Himalayan region, whereas glacial retreat in the Pamir Plateau region is less apparent.

Different glacier status with atmospheric circulations in Tibetan Plateau and surroundings

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

In article number https://doi.org/10.1002/advs.201903027, Muhammad M. Hussain and co‐workers demonstrate a multilevel microfluidics chip with different Boolean logic functions including AND, OR and XOR, in addition to a half adder microfluidic circuit based on a pressure‐driven approach. The developed methodology enables simple cascading of logic gates for large‐scale and complex microfluidic computing systems using any non‐functionalized fluid.

https://onlinelibrary.wiley.com/doi/pdf/10.1002/advs.202070007

Microfluidic Logic Gates: Pressure‐Driven Two‐Input 3D Microfluidic Logic Gates (Adv. Sci. 2/2020)

Various examples are provided for stretchable antennas that can be used for applications such as wearable electronics. In one example, a stretchable antenna includes a flexible support structure including a lateral spring section having a proximal end and at a distal end; a metallic antenna disposed on at least a portion of the lateral spring section, the metallic antenna extending along the lateral spring section from the proximal end; and a metallic feed coupled to the metallic antenna at the proximal end of the lateral spring section. In another example, a method includes patterning a polymer layer disposed on a substrate to define a lateral spring section; disposing a metal layer on at least a portion of the lateral spring section, the metal layer forming an antenna extending along the portion of the lateral spring section; and releasing the polymer layer and the metal layer from the substrate.

Stretchable antenna for wearable electronics

https://www.onlinelibrary.wiley.com/doi/pdf/10.1002/smll.201770089

Flexible Electronics: Highly Manufacturable Deep (Sub-Millimeter) Etching Enabled High Aspect Ratio Complex Geometry Lego-Like Silicon Electronics (Small 16/2017)

Evolution in transistor technology from increasingly large power consuming single gate planar devices to energy efficient multiple gate non-planar ultra-narrow (< 20 nm) fins has enhanced the scaling trend to facilitate doubling performance. However, this performance gain happens at the expense of arraying multiple devices (fins) per operation bit, due to their ultra-narrow dimensions (width) originated limited number of charges to induce appreciable amount of drive current. Additionally arraying degrades device off-state leakage and increases short channel characteristics, resulting in reduced chip level energy-efficiency. In this paper, a novel nanotube device (NTFET) topology based on conventional group IV (Si, SiGe) channel materials is discussed. This device utilizes a core/shell dual gate strategy to capitalize on the volume-inversion properties of an ultra-thin (< 10 nm) group IV nanotube channel to minimize leakage and short channel effects while maximizing performance in an area-efficient manner. It is also shown that the NTFET is capable of providing a higher output drive performance per unit chip area than an array of gate-all-around nanowires, while maintaining the leakage and short channel characteristics similar to that of a single gate-all-around nanowire, the latter being the most superior in terms of electrostatic gate control. In the age of big data and the multitude of devices contributing to the internet of things, the NTFET offers a new transistor topology alternative with maximum benefits from performance-energy efficiency-functionality perspective.

/pdf/group-iv-nanotube-transistors-for-next-generation-ubiquitous-3qfx8equ8w.pdf

Group IV nanotube transistors for next generation ubiquitous computing

A three-dimensional structure may be obtained from a two-dimensional thin film by applying a stressor layer to the two-dimensional thin film and releasing the thin film from a support substrate. Such a three-dimensional structure may include a thermoelectric responsive material for forming a thermoelectric generator (TEG). A manufacturing process for the transformation from 2-D to 3-D may use a polymer stressor layer deposited on the thermoelectric responsive thin film. The combination thermoelectric responsive layer and stressor layer can be released from a carrier, after which the stressor layer causes the thermoelectric responsive layer to curl. The curl can cause the thermoelectric responsive layer to roll up during the release from the carrier to form a tubular structure.

Muhammad Mustafa Hussain

Papers

Microfluidic Logic Gates: Pressure‐Driven Two‐Input 3D Microfluidic Logic Gates (Adv. Sci. 2/2020)

Stretchable antenna for wearable electronics

Flexible Electronics: Highly Manufacturable Deep (Sub-Millimeter) Etching Enabled High Aspect Ratio Complex Geometry Lego-Like Silicon Electronics (Small 16/2017)

Group IV nanotube transistors for next generation ubiquitous computing

Strain-induced topological transformation of thermoelectric responsive thin films