M
Muhammad Mustafa Hussain
Researcher at King Abdullah University of Science and Technology
Publications - 333
Citations - 6943
Muhammad Mustafa Hussain is an academic researcher from King Abdullah University of Science and Technology. The author has contributed to research in topics: Silicon & Metal gate. The author has an hindex of 39, co-authored 330 publications receiving 5355 citations. Previous affiliations of Muhammad Mustafa Hussain include University of California, Berkeley & SEMATECH.
Papers
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The progress and challenges of threshold voltage control of high-k/metal-gated devices for advanced technologies (Invited Paper)
Hsing-Huang Tseng,Paul Kirsch,Chanro Park,Gennadi Bersuker,Prashant Majhi,Muhammad Mustafa Hussain,Raj Jammy +6 more
TL;DR: A dipole moment model explaining threshold voltage tuning of HfSiON/metal-gated MOSFETs is proposed in this article, and a dual channel scheme that allows La"2O"3 capping in NMOS and a SiGe channel in PMOS to achieve acceptable threshold voltage (V"t) control of incorporating La and Al into HKMG devices is discussed.
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Wavy channel transistor for area efficient high performance operation
TL;DR: In this paper, the authors report a wavy channel FinFET like transistor where the channel is wavy to increase its width without any area penalty and thereby increasing its drive current.
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Expandable Polymer Enabled Wirelessly Destructible High-Performance Solid State Electronics
Abdurrahman Gumus,Arsalan Alam,Aftab M. Hussain,Kush Mishra,Irmandy Wicaksono,Galo A. Torres Sevilla,Sohail F. Shaikh,Marlon Diaz,Seneca J. Velling,Seneca J. Velling,Mohamed T. Ghoneim,Sally Ahmed,Muhammad Mustafa Hussain +12 more
TL;DR: In this paper, the authors showed that the Joule heating effect induced thermal expansion and stress gradient between thermally expandable advanced polymeric material and flexible bulk monocrystalline silicon (100) can be used to destroy high-performance solid state electronics as needed and under 10 s.
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Hot carrier degradation in HfSiON∕TiN fin shaped field effect transistor with different substrate orientations
Chadwin D. Young,Ji-Woon Yang,Kenneth Matthews,S. Suthram,Muhammad Mustafa Hussain,Gennadi Bersuker,Casey Smith,R. Harris,Rino Choi,Byoung Hun Lee,Hsing-Huang Tseng +10 more
TL;DR: In this paper, the authors evaluated HCI degradation for n-metal oxide semiconductor (MOS) and pMOS high-κ-fin shaped field effect transistor with (100) and (110) sidewall surface orientations.
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Additive advantage in characteristics of MIMCAPs on flexible silicon (100) fabric with release-first process
TL;DR: In this article, the authors report the inherent increase in capacitance per unit planar area of high-κ integrated metal/insulator/metal capacitors (MIMCAPs) fabricated on flexible silicon fabric with release-first process.