다중혈관 관상동맥 환자에서 y-문합을 이용하여 양쪽 내흉동맥만을 사용한 우회술의 조기 성적

Graphene based materials: Past, present and future

Molecular self-assembly is the spontaneous association of molecules under equilibrium conditions into stable, structurally well-defined aggregates joined by noncovalent bonds. Molecular self-assembly is ubiquitous in biological systems and underlies the formation of a wide variety of complex biological structures. Understanding self-assembly and the associated noncovalent interactions that connect complementary interacting molecular surfaces in biological aggregates is a central concern in structural biochemistry. Self-assembly is also emerging as a new strategy in chemical synthesis, with the potential of generating nonbiological structures with dimensions of 1 to 10(2) nanometers (with molecular weights of 10(4) to 10(10) daltons). Structures in the upper part of this range of sizes are presently inaccessible through chemical synthesis, and the ability to prepare them would open a route to structures comparable in size (and perhaps complementary in function) to those that can be prepared by microlithography and other techniques of microfabrication.

Molecular self-assembly and nanochemistry: A chemical strategy for the synthesis of nanostructures

Glacial melting in the Tibetan Plateau affects the water resources of millions of people. This study finds that—partly owing to changes in atmospheric circulations and precipitation patterns—the most intensive glacier shrinkage is in the Himalayan region, whereas glacial retreat in the Pamir Plateau region is less apparent.

Different glacier status with atmospheric circulations in Tibetan Plateau and surroundings

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

The shape reconfiguration is an arising concept in advanced electronics research, which allows the electronic platform to change in shape and assume different configurations while maintaining high electrical functionality. The reconfigurable electronic platforms are attractive for state of the art biomedical technologies, where the reshaping feature increases the adaptability and compliance of the electronic platform to the human body. Here, we present an amorphous silicon honeycomb-shaped reconfigurable electronic platform that can reconfigure into three different shapes: the quatrefoil shape, the star shape, and an irregular shape. We show the reconfiguration capabilities of the design in microscale and macroscale fabricated versions. We use finite element method analysis to calculate the stress and strain profiles of the microsized honeycomb-serpentine design at a prescribed displacement of 100  μ m. The results show that the reconfiguration capabilities can be improved by eliminating certain interconnects. We further improve the design by optimizing the serpentine interconnect parameters and refabricate the platform on a macroscale to facilitate the reconfiguration process. The macroscale version demonstrates an enhanced reconfiguration capability and elevates the stretchability by 21% along the vertical axis and by 36.6% along the diagonal axis of the platform. The resulting reconfiguring capabilities of the serpentine-honeycomb reconfigurable platform broaden the innovation opportunity for wearable electronics, implantable electronics, and soft robotics.

/pdf/honeycomb-serpentine-silicon-platform-for-reconfigurable-2vxlyb76b7.pdf

Honeycomb-serpentine silicon platform for reconfigurable electronics

With the rapidly growing interest in bifacial photovoltaics (PV), a worldwide perspective of their performance and design is critical to promote further commercialization of this promising technology. The analysis and optimization of bifacial PV panels in previous literature, however, only focused on either few locations or very specific configurations (e.g., vertical panel). It is not clear how to translate these location- and configuration-specific conclusions to the general prospect of the technology across the globe. In this paper, we present a global study and optimization of bifacial PV at both the single-panel and farm level by our rigorous modeling framework. Our simulation indicates that east-west facing vertically mounted bifacial solar panels can outperform conventional south-north facing bifacial panels at zero elevation (ground-mounted) up to the latitude of 30°. For vertical bifacial solar farms, the optimal row-to-row pitch is also found to be ~1 m for 1 m high panel in the region where the vertical installation produces more electricity.

The Potential of Bifacial Photovoltaics: A Global Perspective

An apparatus, system, and method for a self-powered device (100) using on-chip power generation. In some embodiments, the apparatus includes a substrate (118), a power generation module (114, 106, 110, 112) on the substrate, and a power storage module (108) on the substrate. The power generation module may include a thermoelectric generator (106) made of bismuth telluride.

Self-powered functional device using on-chip power generation

In this work, a large area, low cost and flexible polymer/paper-based double touch mode capacitive pressure sensor is demonstrated. Garage fabrication processes are used which only require cutting, taping and assembly of aluminum (Al) coated polyimide (PI) foil, PI tape and double-sided scotch tape. The presented pressure sensor operates in different pressure regions i.e. normal (0 to 7.5 kPa), transition (7.5 to 14.24 kPa), linear (14.24 to 54.9 kPa) and saturation (above 54.9 kPa). The advantages of the demonstrated double touch mode capacitive pressure sensors are low temperature drift, long linear range, high pressure sensitivity, precise pressure measurement and large die area. The linear output along with a high sensitivity range (14.24 to 54.9 kPa pressure range) of the sensor are utilized to wirelessly control the movement of a robotic arm with precise rotation and tilt movement capabilities.

/pdf/polymer-paper-based-double-touch-mode-capacitive-pressure-4e3kyrka58.pdf

Polymer/paper-based double touch mode capacitive pressure sensing element for wireless control of robotic arm

In this article, the performance of silicon FinFET is compared with carbon nanotube (CNT-FET) and 2-D field-effect transistors (2D-FETs) for the upcoming node CMOS logic application. Based on the experimental results, a 17-stage ring oscillator (RO) circuit is implemented using the compact models to analyze the stage-delay and energy-delay performances. A tightly positioned 20- and 10-nm channel-length-based CNT-FET enhances ${I}_{\mathrm{\scriptscriptstyle ON}}$ and also increases the leakage currents significantly. Due to poor electrostatic control and increased gate leakage, the CNT-FET and 2D-FET provide lowered ${I}_{\mathrm{\scriptscriptstyle ON}}$ and a limited ac performance. Thus, targeting an off-state current, the FinFET delivers more than three times higher drive current, as well as five times better energy-delay performances in comparison to the CNT-FET and 2D-FET. On the other hand, scaled organic FETs are yet far away to compare with FinFET technology. Hence, the silicon-based (3-D) FETs are leading in all the devices (2-D, 1-D, and 0-D) for scaling next-generation CMOS technology.

Muhammad Mustafa Hussain

Papers

Honeycomb-serpentine silicon platform for reconfigurable electronics

The Potential of Bifacial Photovoltaics: A Global Perspective

Self-powered functional device using on-chip power generation

Polymer/paper-based double touch mode capacitive pressure sensing element for wireless control of robotic arm

Benchmarking Silicon FinFET With the Carbon Nanotube and 2D-FETs for Advanced Node CMOS Logic Application