M
Muhammad Mustafa Hussain
Researcher at King Abdullah University of Science and Technology
Publications - 333
Citations - 6943
Muhammad Mustafa Hussain is an academic researcher from King Abdullah University of Science and Technology. The author has contributed to research in topics: Silicon & Metal gate. The author has an hindex of 39, co-authored 330 publications receiving 5355 citations. Previous affiliations of Muhammad Mustafa Hussain include University of California, Berkeley & SEMATECH.
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Proceedings ArticleDOI
Corrugation Enabled Ultraflexible Monocrystalline Silicon Solar Cells with Interdigitated Back Contacts
TL;DR: In this article, the authors developed ultraflexible monocrystalline silicon solar cells using a corrugation technique, which consists of producing alternating trenches following different patterns, allowing for different characteristics of the solar cell with regard to flexing capability output power and weight.
Journal ArticleDOI
A thermal microfluidic actuator based on a novel microheater
Nadeem Qaiser,Sherjeel M. Khan,Wedyan Babatain,Maha A. Nour,Lana Joharji,Sohail F. Shaikh,Nazek El-Atab,Muhammad Mustafa Hussain +7 more
TL;DR: In this article , a microfluidic actuator was integrated into a microheater and poly-dimethylsiloxane-expancel, controlling the operation/actuation of a fluid through a microchannel.
Proceedings ArticleDOI
Direct measurement of graphene contact resistivity to pre-deposited metal in buried contact test structure
TL;DR: In this article, the authors demonstrate a buried contact based novel test structure for direct contact resistivity measurement of graphene-metal interfaces and observe excellent contact resistivities ~1 μO-cm2 without any additional surface modification.
Proceedings ArticleDOI
La-doped metal/high-K nMOSFET for sub-32nm HP and LSTP application
Chanro Park,Ji-Woon Yang,Muhammad Mustafa Hussain,C. Y. Kang,Jiacheng Huang,P. Sivasubramani,C. Park,K. Tateiwa,Y. Harada,Joel Barnett,C. Melvin,Gennadi Bersuker,Paul Kirsch,Byoung Hun Lee,H.-H. Tseng,R. Jammy +15 more
TL;DR: In this paper, the La-doped high-k/metal gate stack was investigated for sub-32nm LSTP and HP applications and the results indicated that employing the metal electrode suppresses V t variability while no additional parameter fluctuations were observed.
Proceedings ArticleDOI
Gate First Band Edge High-k/Metal Stacks with EOT=0.74nm for 22nm Node nFETs
Jiacheng Huang,Paul Kirsch,Muhammad Mustafa Hussain,Dawei Heh,P. Sivasubramani,Chadwin D. Young,David Gilmer,C. Park,Y.N. Tan,Chanro Park,H.R. Harris,Prashant Majhi,Gennadi Bersuker,Byoung Hun Lee,H.-H. Tseng,Rajarao Jammy +15 more
TL;DR: For the first time a gate first high-k/metal gate (MG) nFET with EOT = 0.74 nm is demonstrated with low leakage, low leakage (> 200x reduction vs. SiO2/PolySi) and good PBTI.