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S. J. Mukhopadhyay

Researcher at Indian Institute of Engineering Science and Technology, Shibpur

Publications -  20
Citations -  36

S. J. Mukhopadhyay is an academic researcher from Indian Institute of Engineering Science and Technology, Shibpur. The author has contributed to research in topics: Terahertz radiation & Diode. The author has an hindex of 2, co-authored 18 publications receiving 18 citations. Previous affiliations of S. J. Mukhopadhyay include Bose Corporation.

Papers
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Journal ArticleDOI

Performance Analysis of the Diagonal Tunneling-Based Dielectrically Modulated Tunnel FET for Bio-Sensing Applications

TL;DR: In this article, a Diagonal Tunneling Dielectrically Modulated Tunnel Field Effect Transistor (DT-DMTFET) architecture is proposed for label-free bio-sensing application.
Journal ArticleDOI

Breast cancer, locally advanced and metastatic

Christoph C. Zielinski, +603 more
- 01 Sep 2012 - 
TL;DR: The non-inferiority criterion has not been met but OS results do not indicate relevant differences and secondary endpoints include response rate, progression-free survival, safety and quality of life.
Proceedings ArticleDOI

DC and Noise Analysis of Si and 3C-SiC based IMPATTs at W-Band

TL;DR: In this article, an analysis has been made on IMPATT diodes based on Group IV-IV materials such as Silicon (Si) and 3C type Silicon Carbide (3C-SiC) operating at W-band (94GHz).
Journal ArticleDOI

Influence of self-heating on the millimeter-wave and terahertz performance of MBE grown silicon IMPATT diodes

TL;DR: In this article, the influence of self-heating on the double-drift region (DDR) impact avalanche transit time (IMPATT) sources based on silicon (Si) has been investigated.
Book ChapterDOI

Terahertz Radiators Based on Silicon Carbide Avalanche Transit Time Sources—Part I: Large-Signal Characteristics

TL;DR: In this paper, a non-sinusoidal voltage excited (NSVE) large-signal simulation procedure has been employed to scrutinize the static and large signal features of the sources.