Thermal management is one of the main challenges for the future of electronics1–5. With the ever-increasing rate of data generation and communication, as well as the constant push to reduce the size and costs of industrial converter systems, the power density of electronics has risen6. Consequently, cooling, with its enormous energy and water consumption, has an increasingly large environmental impact7,8, and new technologies are needed to extract the heat in a more sustainable way—that is, requiring less water and energy9. Embedding liquid cooling directly inside the chip is a promising approach for more efficient thermal management5,10,11. However, even in state-of-the-art approaches, the electronics and cooling are treated separately, leaving the full energy-saving potential of embedded cooling untapped. Here we show that by co-designing microfluidics and electronics within the same semiconductor substrate we can produce a monolithically integrated manifold microchannel cooling structure with efficiency beyond what is currently available. Our results show that heat fluxes exceeding 1.7 kilowatts per square centimetre can be extracted using only 0.57 watts per square centimetre of pumping power. We observed an unprecedented coefficient of performance (exceeding 10,000) for single-phase water-cooling of heat fluxes exceeding 1 kilowatt per square centimetre, corresponding to a 50-fold increase compared to straight microchannels, as well as a very high average Nusselt number of 16. The proposed cooling technology should enable further miniaturization of electronics, potentially extending Moore’s law and greatly reducing the energy consumption in cooling of electronics. Furthermore, by removing the need for large external heat sinks, this approach should enable the realization of very compact power converters integrated on a single chip. Cooling efficiency is greatly increased by directly embedding liquid cooling into electronic chips, using microfluidics-based heat sinks that are designed in conjunction with the electronics within the same semiconductor substrate.

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Co-designing electronics with microfluidics for more sustainable cooling.

Gallium oxide (Ga2O3) is an emerging wide bandgap semiconductor that has attracted a large amount of interest due to its ultra-large bandgap of 4.8 eV, a high breakdown field of 8 MV/cm, and high thermal stability. These properties enable Ga2O3 a promising material for a large range of applications, such as high power electronic devices and solar-blind ultraviolet (UV) photodetectors. In the past few years, a significant process has been made for the growth of high-quality bulk crystals and thin films and device optimizations for power electronics and solar blind UV detection. However, many challenges remain, including the difficulty in p-type doping, a large density of unintentional electron carriers and defects/impurities, and issues with the device process (contact, dielectrics, and surface passivation), and so on. The purpose of this article is to provide a timely review on the fundamental understanding of the semiconductor physics and chemistry of Ga2O3 in terms of electronic band structures, optical properties, and chemistry of defects and impurity doping. Recent progress and perspectives on epitaxial thin film growth, chemical and physical properties of defects and impurities, p-type doping, and ternary alloys with In2O3 and Al2O3 will be discussed.

Recent progress on the electronic structure, defect, and doping properties of Ga2O3

This article reviews the design and evaluation of different DC-DC converter topologies for Battery Electric Vehicles (BEVs) and Plug-in Hybrid Electric Vehicles (PHEVs). The design and evaluation of these converter topologies are presented, analyzed and compared in terms of output power, component count, switching frequency, electromagnetic interference (EMI), losses, effectiveness, reliability and cost. This paper also evaluates the architecture, merits and demerits of converter topologies (AC-DC and DC-DC) for Fast Charging Stations (FCHARs). On the basis of this analysis, it has found that the Multidevice Interleaved DC-DC Bidirectional Converter (MDIBC) is the most suitable topology for high-power BEVs and PHEVs (> 10kW), thanks to its low input current ripples, low output voltage ripples, low electromagnetic interference, bidirectionality, high efficiency and high reliability. In contrast, for low-power electric vehicles (<10 kW), it is tough to recommend a single candidate that is the best in all possible aspects. However, the Sinusoidal Amplitude Converter, the Z-Source DC-DC converter and the boost DC-DC converter with resonant circuit are more suitable for low-power BEVs and PHEVs because of their soft switching, noise-free operation, low switching loss and high efficiency. Finally, this paper explores the opportunity of using wide band gap semiconductors (WBGSs) in DC-DC converters for BEVs, PHEVs and converters for FCHARs. Specifically, the future roadmap of research for WBGSs, modeling of emerging topologies and design techniques of the control system for BEV and PHEV powertrains are also presented in detail, which will certainly help researchers and solution engineers of automotive industries to select the suitable converter topology to achieve the growth of projected power density.

DC-DC Converter Topologies for Electric Vehicles, Plug-in Hybrid Electric Vehicles and Fast Charging Stations: State of the Art and Future Trends

https://iopscience.iop.org/article/10.1088/1361-6463/aac8aa/pdf

Gallium nitride vertical power devices on foreign substrates: a review and outlook

Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the fabrication of power devices. Among the semiconductors for which power devices are already available in the market, GaN has the widest energy gap, the largest critical field, and the highest saturation velocity, thus representing an excellent material for the fabrication of high-speed/high-voltage components. The presence of spontaneous and piezoelectric polarization allows us to create a two-dimensional electron gas, with high mobility and large channel density, in the absence of any doping, thanks to the use of AlGaN/GaN heterostructures. This contributes to minimize resistive losses; at the same time, for GaN transistors, switching losses are very low, thanks to the small parasitic capacitances and switching charges. Device scaling and monolithic integration enable a high-frequency operation, with consequent advantages in terms of miniaturization. For high power/high-voltage operation, vertical device architectures are being proposed and investigated, and three-dimensional structures—fin-shaped, trench-structured, nanowire-based—are demonstrating great potential. Contrary to Si, GaN is a relatively young material: trapping and degradation processes must be understood and described in detail, with the aim of optimizing device stability and reliability. This Tutorial describes the physics, technology, and reliability of GaN-based power devices: in the first part of the article, starting from a discussion of the main properties of the material, the characteristics of lateral and vertical GaN transistors are discussed in detail to provide guidance in this complex and interesting field. The second part of the paper focuses on trapping and reliability aspects: the physical origin of traps in GaN and the main degradation mechanisms are discussed in detail. The wide set of referenced papers and the insight into the most relevant aspects gives the reader a comprehensive overview on the present and next-generation GaN electronics.

https://hal.archives-ouvertes.fr/hal-03421528/document

GaN-based power devices: Physics, reliability, and perspectives

Gallium nitride (GaN) is a compound semiconductor that has tremendous potential to facilitate economic growth in a semiconductor industry that is silicon-based and currently faced with diminishing returns of performance versus cost of investment. At a material level, its high electric field strength and electron mobility have already shown tremendous potential for high frequency communications and photonic applications. Advances in growth on commercially viable large area substrates are now at the point where power conversion applications of GaN are at the cusp of commercialisation. The future for building on the work described here in ways driven by specific challenges emerging from entirely new markets and applications is very exciting. This collection of GaN technology developments is therefore not itself a road map but a valuable collection of global state-of-the-art GaN research that will inform the next phase of the technology as market driven requirements evolve. First generation production devices are igniting large new markets and applications that can only be achieved using the advantages of higher speed, low specific resistivity and low saturation switching transistors. Major investments are being made by industrial companies in a wide variety of markets exploring the use of the technology in new circuit topologies, packaging solutions and system architectures that are required to achieve and optimise the system advantages offered by GaN transistors. It is this momentum that will drive priorities for the next stages of device research gathered here.

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T Bouchet

Papers

The 2018 GaN power electronics roadmap