Robert McCarthy

TL;DR: This collection of GaN technology developments is not itself a road map but a valuable collection of global state-of-the-art GaN research that will inform the next phase of the technology as market driven requirements evolve.

TL;DR: In this article, an ion-implanted edge termination (ET) with sputtered SiNx passivation and optimized ohmic contacts is proposed to realize high-voltage, high-current vertical GaN-on-GaN power diodes.

TL;DR: An epitaxial lift-off (ELO) process for GaN materials has been demonstrated using bandgap-selective photoenhanced wet etching of an InGaN release layer as mentioned in this paper.

TL;DR: In this article, a method for synthesizing an In(III N,N′-diisopropylacetamidinate precursor including cooling a mixture comprised of diisopric carbodiimide and diethyl ether to approximately −30°C, adding methyllithium drop-wise into the mixture, allowing the mixture to warm to room temperature, adding indium(III) chloride as a solid to the mixture and dissolving the white solid in pentane to form a clear and colorless solution.

TL;DR: It is concluded that only trimethylgallium which contributes to growth of the GaN layer contributes to carbon incorporation, and ammonia molar flow divided by growth rate is proposed as a reactor independent predictor of carbon incorporation as opposed to the often-reported input V/III ratio.