T
Thomas Heckel
Researcher at Fraunhofer Society
Publications - 26
Citations - 975
Thomas Heckel is an academic researcher from Fraunhofer Society. The author has contributed to research in topics: Power semiconductor device & Capacitance. The author has an hindex of 8, co-authored 23 publications receiving 637 citations. Previous affiliations of Thomas Heckel include University of Erlangen-Nuremberg.
Papers
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Journal ArticleDOI
The 2018 GaN power electronics roadmap
Hiroshi Amano,Yannick Baines,Matteo Borga,T Bouchet,Paul R. Chalker,Matthew Charles,Kevin J. Chen,Nadim Chowdhury,Rongming Chu,Carlo De Santi,Maria Merlyne De Souza,Stefaan Decoutere,L. Di Cioccio,Bernd Eckardt,Takashi Egawa,Patrick Fay,Joseph J. Freedsman,Louis J. Guido,Oliver Häberlen,Geoff Haynes,Thomas Heckel,Dilini Hemakumara,Peter A. Houston,Jie Hu,Mengyuan Hua,Qingyun Huang,Alex Q. Huang,Sheng Jiang,Hiroji Kawai,Dan Kinzer,Martin Kuball,Ashwani Kumar,K. B. Lee,Xu Li,Denis Marcon,Martin Marz,Robert McCarthy,Gaudenzio Meneghesso,Matteo Meneghini,Erwan Morvan,Akira Nakajima,Ekkanath Madathil Sankara Narayanan,Stephen Oliver,Tomas Palacios,Daniel Piedra,Marc Plissonnier,Rekha Reddy,Min Sun,Iain G. Thayne,A. Torres,Nicola Trivellin,Vineet Unni,Michael J. Uren,Marleen Van Hove,David J. Wallis,David J. Wallis,Jingshan Wang,Jinqiao Xie,Shuichi Yagi,Shu Yang,Chris Youtsey,Ruiyang Yu,Enrico Zanoni,Stefan Zeltner,Yuhao Zhang +64 more
TL;DR: This collection of GaN technology developments is not itself a road map but a valuable collection of global state-of-the-art GaN research that will inform the next phase of the technology as market driven requirements evolve.
Journal ArticleDOI
A Universal SPICE Field-Effect Transistor Model Applied on SiC and GaN Transistors
Achim Endruschat,Christian Novak,Holger Gerstner,Thomas Heckel,Christopher Joffe,Martin Marz +5 more
TL;DR: In this article, a universal SPICE model for field effect transistors is presented, which is based on a set of collected measurement data and is used for dynamic validation at a characterized measurement test bench regarding its parasitic elements.
Proceedings ArticleDOI
Characterization and application of 600 V normally-off GaN transistors in hard switching DC/DC converters
TL;DR: In this paper, the capabilities of GaN-on-Si transistors were demonstrated using a novel 600 V normally-off GaN on-Si transistor which shows no dynamic behavior of its on-resistance.
Proceedings ArticleDOI
Inductive power transfer system with a rotary transformer for contactless energy transfer on rotating applications
TL;DR: This paper examines an inductive power transfer system with a rotary transformer as an alternative solution to slip ring systems for a contactless energy transfer to rotating equipment.
Proceedings ArticleDOI
Implementation of simultaneous energy and data transfer in a contactless connector
Martin Trautmann,Christopher Joffe,Felix Pflaum,Benedikt Sanftl,Robert Weigel,Thomas Heckel,Alexander Koelpin +6 more
TL;DR: It will be shown that a robust data transmission system can be realized featuring superior SNR and nearly noise free operation even with a simultaneous energy transfer of several kilowatts.