S
Shuichi Yagi
Researcher at National Institute of Advanced Industrial Science and Technology
Publications - 40
Citations - 1094
Shuichi Yagi is an academic researcher from National Institute of Advanced Industrial Science and Technology. The author has contributed to research in topics: Field-effect transistor & Gallium nitride. The author has an hindex of 9, co-authored 36 publications receiving 786 citations. Previous affiliations of Shuichi Yagi include Sumitomo Chemical & Meisei University.
Papers
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Journal ArticleDOI
The 2018 GaN power electronics roadmap
Hiroshi Amano,Yannick Baines,Matteo Borga,T Bouchet,Paul R. Chalker,Matthew Charles,Kevin J. Chen,Nadim Chowdhury,Rongming Chu,Carlo De Santi,Maria Merlyne De Souza,Stefaan Decoutere,L. Di Cioccio,Bernd Eckardt,Takashi Egawa,Patrick Fay,Joseph J. Freedsman,Louis J. Guido,Oliver Häberlen,Geoff Haynes,Thomas Heckel,Dilini Hemakumara,Peter A. Houston,Jie Hu,Mengyuan Hua,Qingyun Huang,Alex Q. Huang,Sheng Jiang,Hiroji Kawai,Dan Kinzer,Martin Kuball,Ashwani Kumar,K. B. Lee,Xu Li,Denis Marcon,Martin Marz,Robert McCarthy,Gaudenzio Meneghesso,Matteo Meneghini,Erwan Morvan,Akira Nakajima,Ekkanath Madathil Sankara Narayanan,Stephen Oliver,Tomas Palacios,Daniel Piedra,Marc Plissonnier,Rekha Reddy,Min Sun,Iain G. Thayne,A. Torres,Nicola Trivellin,Vineet Unni,Michael J. Uren,Marleen Van Hove,David J. Wallis,David J. Wallis,Jingshan Wang,Jinqiao Xie,Shuichi Yagi,Shu Yang,Chris Youtsey,Ruiyang Yu,Enrico Zanoni,Stefan Zeltner,Yuhao Zhang +64 more
TL;DR: This collection of GaN technology developments is not itself a road map but a valuable collection of global state-of-the-art GaN research that will inform the next phase of the technology as market driven requirements evolve.
Journal ArticleDOI
High breakdown voltage AlGaN/GaN MIS–HEMT with SiN and TiO2 gate insulator
Shuichi Yagi,Mitsuaki Shimizu,Masaki Inada,Y. Yamamoto,Guanxi Piao,Hajime Okumura,Yoshiki Yano,Nakao Akutsu,Hiromichi Ohashi +8 more
TL;DR: In this paper, the fabrication of AlGaN/GaN high electron mobility transistor (HEMT) with high breakdown voltage by employing the metal insulator-semiconductor (MIS) gate structure was reported.
Patent
Semiconductor field effect transistor and method for fabricating the same
TL;DR: A gallium nitride-based field effect transistor having good current hysteresis characteristics in which forward gate leakage can be reduced can be found in this paper, where part or all of a material constituting the gate insulation film (108) is a dielectric material having a relative lower bound of 9-22.
Journal ArticleDOI
High Breakdown Voltage AlGaN/GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistor with TiO2/SiN Gate Insulator
TL;DR: In this article, the fabrication of an AlGaN/GaN high-electron-mobility transistor (HEMT) with a high breakdown voltage by employing a metal-insulator-semiconductor (MIS) gate structure using TiO2/SiN insulators was reported.
Patent
Nitride semiconductor hetero-junction transistor using resurf structure
Masaki Inada,Akira Nakajima,Hajime Okumura,Mitsutoshi Shimizu,Shuichi Yagi,昭 中島,修一 八木,元 奥村,三聡 清水,正樹 稲田 +9 more
TL;DR: In this paper, the resurf effect was used to increase the withstanding voltage of a nitride hetero-junction transistor, where the surface densities of spatial stationary charges are substantially equal when the channel and the field control channel are depleted.