K
K. B. Lee
Researcher at University of Sheffield
Publications - 46
Citations - 1321
K. B. Lee is an academic researcher from University of Sheffield. The author has contributed to research in topics: Gallium nitride & High-electron-mobility transistor. The author has an hindex of 14, co-authored 46 publications receiving 972 citations. Previous affiliations of K. B. Lee include Agency for Science, Technology and Research.
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Journal ArticleDOI
The 2018 GaN power electronics roadmap
Hiroshi Amano,Yannick Baines,Matteo Borga,T Bouchet,Paul R. Chalker,Matthew Charles,Kevin J. Chen,Nadim Chowdhury,Rongming Chu,Carlo De Santi,Maria Merlyne De Souza,Stefaan Decoutere,L. Di Cioccio,Bernd Eckardt,Takashi Egawa,Patrick Fay,Joseph J. Freedsman,Louis J. Guido,Oliver Häberlen,Geoff Haynes,Thomas Heckel,Dilini Hemakumara,Peter A. Houston,Jie Hu,Mengyuan Hua,Qingyun Huang,Alex Q. Huang,Sheng Jiang,Hiroji Kawai,Dan Kinzer,Martin Kuball,Ashwani Kumar,K. B. Lee,Xu Li,Denis Marcon,Martin Marz,Robert McCarthy,Gaudenzio Meneghesso,Matteo Meneghini,Erwan Morvan,Akira Nakajima,Ekkanath Madathil Sankara Narayanan,Stephen Oliver,Tomas Palacios,Daniel Piedra,Marc Plissonnier,Rekha Reddy,Min Sun,Iain G. Thayne,A. Torres,Nicola Trivellin,Vineet Unni,Michael J. Uren,Marleen Van Hove,David J. Wallis,David J. Wallis,Jingshan Wang,Jinqiao Xie,Shuichi Yagi,Shu Yang,Chris Youtsey,Ruiyang Yu,Enrico Zanoni,Stefan Zeltner,Yuhao Zhang +64 more
TL;DR: This collection of GaN technology developments is not itself a road map but a valuable collection of global state-of-the-art GaN research that will inform the next phase of the technology as market driven requirements evolve.
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A study of dislocations in AlN and GaN films grown on sapphire substrates
TL;DR: In this paper, the dislocations in epitaxial AlN film directly grown on sapphire have been investigated by transmission electron microscope and X-ray diffraction (XRD), including direct comparison with conventional GaN film grown on the same substrate.
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Optical investigation of exciton localization in AlxGa1−xN
TL;DR: The optical properties of AlxGa1−xN epilayers with x ranging from 0.08 to 0.52 have been studied by photoluminescence (PL) as discussed by the authors.
Journal ArticleDOI
Greatly improved performance of 340nm light emitting diodes using a very thin GaN interlayer on a high temperature AlN buffer layer
Tao Wang,K. B. Lee,Jie Bai,Peter J. Parbrook,R. J. Airey,Qian Wang,G. Hill,F. Ranalli,A. G. Cullis +8 more
TL;DR: In this article, a very thin GaN interlayer (10-20nm) was used as a buffer layer to prevent the penetration of dislocations in the buffer layer into the overlaying AlGaN layer.
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InGaN/GaN quantum wells with low growth temperature GaN cap layers
TL;DR: In this article, the use of a low growth temperature, thin GaN cap is investigated as a means to reduce indium desorption following the growth of InGaN quantum wells.