T
T. Hoffman
Researcher at Intel
Publications - 3
Citations - 1324
T. Hoffman is an academic researcher from Intel. The author has contributed to research in topics: MOSFET & Electron mobility. The author has an hindex of 3, co-authored 3 publications receiving 1257 citations.
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Journal ArticleDOI
A 90-nm logic technology featuring strained-silicon
Scott E. Thompson,Mark Armstrong,C. Auth,Mohsen Alavi,M. Buehler,R. Chau,S. Cea,Tahir Ghani,G. Glass,T. Hoffman,Chia-Hong Jan,C. Kenyon,Jason Klaus,K. Kuhn,Z. Ma,B. McIntyre,Kaizad Mistry,Anand Portland Murthy,B. Obradovic,Ramune Nagisetty,P. Nguyen,Swaminathan Sivakumar,R. Shaheed,Lucian Shifren,B. Tufts,S. Tyagi,M. Bohr,Y. El-Mansy +27 more
TL;DR: In this paper, a leading-edge 90-nm technology with 1.2-nm physical gate oxide, 45-nm gate length, strained silicon, NiSi, seven layers of Cu interconnects, and low/spl kappa/CDO for high-performance dense logic is presented.
Journal ArticleDOI
A logic nanotechnology featuring strained-silicon
Scott E. Thompson,Mark Armstrong,C. Auth,S. Cea,R. Chau,G. Glass,T. Hoffman,Jason Klaus,Z. Ma,B. McIntyre,Anand Portland Murthy,B. Obradovic,Lucian Shifren,Swaminathan Sivakumar,S. Tyagi,Tahir Ghani,Kaizad Mistry,Mark T. Bohr,Y. El-Mansy +18 more
TL;DR: In this article, a tensile Si nitride-capping layer is used to introduce tensile uniaxial strain into the n-type MOSFET and enhance electron mobility.
Journal ArticleDOI
Drive current enhancement in p-type metal–oxide–semiconductor field-effect transistors under shear uniaxial stress
Lucian Shifren,Xiaofei Wang,Philippe Matagne,B. Obradovic,C. Auth,S. Cea,Tahir Ghani,J. He,T. Hoffman,Roza Kotlyar,Z. Ma,Kaizad Mistry,Ramune Nagisetty,R. Shaheed,M. Stettler,Cory E. Weber,Martin Giles +16 more
TL;DR: In this paper, the authors describe the warping phenomena responsible for the gain seen in uniaxially stressed PMOS devices on [100] orientated wafers, and demonstrate that shear non-linear stress in PMOS is better suited to MOSFET applications than biaxial stress as it is able to maintain gain at high vertical and lateral fields.