Atomic layer deposition (ALD) relies on alternated, self-limiting reactions between gaseous reactants and an exposed solid surface to deposit highly conformal coatings with a thickness controlled at the submonolayer level. These advantages have rendered ALD a mainstream technique in microelectronics and have triggered growing interest in ALD for a variety of nanotechnology applications, including energy technologies. Often, the choice for ALD is related to the need for a conformal coating on a 3D nanostructured surface, making the conformality of ALD processes a key factor in actual applications. In this work, we aim to review the current status of knowledge about the conformality of ALD processes. We describe the basic concepts related to the conformality of ALD, including an overview of relevant gas transport regimes, definitions of exposure and sticking probability, and a distinction between different ALD growth types observed in high aspect ratio structures. In addition, aiming for a more standardized and direct comparison of reported results concerning the conformality of ALD processes, we propose a new concept, Equivalent Aspect Ratio (EAR), to describe 3D substrates and introduce standard ways to express thin film conformality. Other than the conventional aspect ratio, the EAR provides a measure for the ease of coatability by referring to a cylindrical hole as the reference structure. The different types of high aspect ratio structures and characterization approaches that have been used for quantifying the conformality of ALD processes are reviewed. The published experimental data on the conformality of thermal, plasma-enhanced, and ozone-based ALD processes are tabulated and discussed. Besides discussing the experimental results of conformality of ALD, we will also give an overview of the reported models for simulating the conformality of ALD. The different classes of models are discussed with special attention for the key assumptions typically used in the different modelling approaches. The influence of certain assumptions on simulated deposition thickness profiles is illustrated and discussed with the aim of shedding light on how deposition thickness profiles can provide insights into factors governing the surface chemistry of ALD processes. We hope that this review can serve as a starting point and reference work for new and expert researchers interested in the conformality of ALD and, at the same time, will trigger new research to further improve our understanding of this famous characteristic of ALD processes.

/pdf/conformality-in-atomic-layer-deposition-current-status-3xfw4mj602.pdf

Conformality in atomic layer deposition : current status overview of analysis and modelling

Atomic layer deposition (ALD) is a technology offering the possibility to prepare thin films of high quality materials on high aspect ratio substrates with precise thickness control, high uniformit...

/pdf/atomic-layer-deposition-for-membranes-basics-challenges-and-2a1lw3iy45.pdf

Atomic Layer Deposition for Membranes: Basics, Challenges, and Opportunities

Porous Janus materials with unique asymmetries and functionality

Polyphenol-Sensitized Atomic Layer Deposition for Membrane Interface Hydrophilization

/pdf/atomic-layer-deposition-an-enabling-technology-for-the-em4ksu5hua.pdf

Atomic layer deposition: an enabling technology for the growth of functional nanoscale semiconductors

Atomic layer deposition (ALD), a gas-phase thin film deposition technique based on repeated, self-terminating gas-solid reactions, has become the method of choice in semiconductor manufacturing and many other technological areas for depositing thin conformal inorganic material layers for various applications. ALD has been discovered and developed independently, at least twice, under different names: atomic layer epitaxy (ALE) and molecular layering. ALE, dating back to 1974 in Finland, has been commonly known as the origin of ALD, while work done since the 1960s in the Soviet Union under the name "molecular layering" (and sometimes other names) has remained much less known. The virtual project on the history of ALD (VPHA) is a volunteer-based effort with open participation, set up to make the early days of ALD more transparent. In VPHA, started in July 2013, the target is to list, read and comment on all early ALD academic and patent literature up to 1986. VPHA has resulted in two essays and several presentations at international conferences. This paper, based on a poster presentation at the 16th International Conference on Atomic Layer Deposition in Dublin, Ireland, 2016, presents a recommended reading list of early ALD publications, created collectively by the VPHA participants through voting. The list contains 22 publications from Finland, Japan, Soviet Union, United Kingdom, and United States. Up to now, a balanced overview regarding the early history of ALD has been missing; the current list is an attempt to remedy this deficiency.

/pdf/review-article-recommended-reading-list-of-early-4uhxpsfz6k.pdf

Tommi Kääriäinen

Papers

Review Article: Recommended reading list of early publications on atomic layer deposition—Outcome of the “Virtual Project on the History of ALD”