Jonas Sundqvist

TL;DR: In this article, the fabrication and electrical characterization of 3D trench capacitors based on ferroelectric HfO672 2>>\s is reported, which can be used for nonvolatile memory applications and for the first time a feasible solution for the vertical integration of 1T/1C as well as 1T memories is presented.

TL;DR: The Virtual Project on the history of ALD (VPHA) is a volunteer-based effort with open participation, set up to make the early days of atomic layer deposition more transparent.

TL;DR: In this article, an atomic layer etching (ALE) of thin film Ga-polar GaN(0001) is reported in detail using sequential surface modification by Cl2 adsorption and removal of the modified surface layer by low energy Ar plasma exposure in a standard reactive ion etching system.

TL;DR: In this article, an atomic layer etching (ALE) process was proposed for pattern transfer and high-resolution nanoimprint stamp preparation using a resist as an etc. This process is based on chemical adsorption of a monoatomic layer of dichloride (Cl2) on the silicon surface, followed by the removal of a modified silicon by argon bombardment.

TL;DR: In this article, the scaling and optimization of metal-isolator-metal capacitors integrated in 3D Si structures is discussed, and a fully functional capacitor of 4mm2 consisting of 80 Mil trenches with an overall capacitance of 850nF can be demonstrated.