V
Vincent Jousseaume
Researcher at University of Grenoble
Publications - 122
Citations - 2127
Vincent Jousseaume is an academic researcher from University of Grenoble. The author has contributed to research in topics: Thin film & Dielectric. The author has an hindex of 25, co-authored 118 publications receiving 1967 citations. Previous affiliations of Vincent Jousseaume include Commissariat à l'énergie atomique et aux énergies alternatives & Alternatives.
Papers
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Journal ArticleDOI
Resistance switching in HfO2 metal-insulator-metal devices
Patrice Gonon,Mathieu Mougenot,C. Vallée,Corentin Jorel,Vincent Jousseaume,H. Grampeix,F. El Kamel +6 more
TL;DR: In this paper, the authors studied resistance switching in Au/HfO2 (10 nm)/(Pt, TiN) devices using different bias modes, i.e., a sweeping, a quasistatic and a static (constant voltage stress) mode.
Resistive Switching in HfO2 Metal-Insulator-Metal Devices
TL;DR: In this article, the authors studied resistance switching in Au/HfO2 (10 nm)/(Pt, TiN) devices using different bias modes, i.e., a sweeping, a quasistatic and a static (constant voltage stress) mode.
Journal ArticleDOI
Catalyst preparation for CMOS-compatible silicon nanowire synthesis
V T Renard,Michael Jublot,Patrice Gergaud,Peter Cherns,Denis Rouchon,Amal Chabli,Vincent Jousseaume +6 more
TL;DR: It is demonstrated that the synthesis temperature of silicon nanowires using copper-based catalysts is limited by catalyst preparation, and it is shown that the appropriate catalyst can be produced by chemical means at temperatures as low as 400 degrees C.
Proceedings ArticleDOI
Experimental and theoretical study of electrode effects in HfO 2 based RRAM
C. Cagli,J. Buckley,Vincent Jousseaume,T. Cabout,Anne-Claire Salaün,H. Grampeix,J. F. Nodin,H. Feldis,A. Persico,J. Cluzel,Paolo Lorenzi,L. Massari,Rosario Rao,Fernanda Irrera,F. Aussenac,C. Carabasse,M. Coue,P. Calka,Eugénie Martinez,L. Perniola,P. Blaise,Zheng Fang,Y. H. Yu,Gerard Ghibaudo,Damien Deleruyelle,Marc Bocquet,Ch. Muller,Andrea Padovani,Onofrio Pirrotta,Luca Vandelli,Luca Larcher,G. Reimbold,B. De Salvo +32 more
TL;DR: In this article, the role of TiN/Ti electrodes is explained and modeled based on the presence of HfO x interfacial layer underneath the electrode, which strongly reduces forming and switching voltages with respect to Pt-Pt devices.
Journal ArticleDOI
Back-end-of-line compatible Conductive Bridging RAM based on Cu and SiO2
TL;DR: In this paper, the authors show evidence of reproducible electrical switching, without the need of an annealing post-treatment, and the kinetic behavior of the switching mechanism was studied using electrical experiments.