L
L. Perniola
Researcher at European Automobile Manufacturers Association
Publications - 127
Citations - 2293
L. Perniola is an academic researcher from European Automobile Manufacturers Association. The author has contributed to research in topics: Phase-change memory & Resistive random-access memory. The author has an hindex of 25, co-authored 120 publications receiving 2049 citations.
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Journal ArticleDOI
Chemical vapor deposition of Ge nanocrystals on SiO2
TL;DR: In this paper, a detailed study of the growth of Ge nanocrystals (NCs) on SiO2 by chemical vapor deposition was presented, combining grazing incidence xray diffraction and x-ray photoelectron spectroscopy.
Proceedings ArticleDOI
Resistive Memories for Ultra-Low-Power embedded computing design
E. Vianello,Olivier P. Thomas,G. Molas,O. Turkyilmaz,N. Jovanovic,Daniele Garbin,Giorgio Palma,M. Alayan,C. Nguyen,J. Coignus,Bastien Giraud,T. Benoist,M. Reyboz,Alain Toffoli,C. Charpin,Fabien Clermidy,L. Perniola +16 more
TL;DR: In this article, the authors address two technologies as an example of optimized devices for FPGA and fixed-logic IC design (as non volatile Flip-Flops) as well as non volatile flip-flops.
Proceedings ArticleDOI
How far will silicon nanocrystals push the scaling limits of NVMs technologies
B. De Salvo,Cosimo Gerardi,Salvatore Lombardo,Thierry Baron,L. Perniola,Denis Mariolle,P. Mur,Alain Toffoli,Marc Gely,M.N. Séméria,Simon Deleonibus,G. Ammendola,V. Ancarani,M. Melanotte,Roberto Bez,L. Baldi,D. Corso,Isodiana Crupi,R. A. Puglisi,Giuseppe Nicotra,Emanuele Rimini,Frédéric Mazen,Gerard Ghibaudo,G. Pananakakis,Christian Monzio Compagnoni,Daniele Ielmini,A.L. Lacaita,Alessandro S. Spinelli,Y. M. Wan,K. van der Jeugd +29 more
TL;DR: In this paper, the first time, memory devices with optimized high density (2E12#/cm/sup 2/) LPCVD Si nanocrystals have been reproducibly achieved and studied on an extensive statistical basis (from single cell up to 1 Mb test array under different programming conditions).
Proceedings ArticleDOI
Understanding RRAM endurance, retention and window margin trade-off using experimental results and simulations
Cecile Nail,G. Molas,P. Blaise,G. Piccolboni,Benoit Sklenard,C. Cagli,Mathieu Bernard,A. Roule,M. Azzaz,E. Vianello,C. Carabasse,R. Berthier,David Cooper,C. Pelissier,T. Magis,Gerard Ghibaudo,Christophe Vallée,D. Bedeau,O. Mosendz,B. De Salvo,L. Perniola +20 more
TL;DR: In this article, the correlation between endurance, window margin and retention of resistive RAM was investigated, showing high window margin up to 1010 cycles or high 300°C retention.
Proceedings ArticleDOI
Experimental and theoretical study of electrode effects in HfO 2 based RRAM
C. Cagli,J. Buckley,Vincent Jousseaume,T. Cabout,Anne-Claire Salaün,H. Grampeix,J. F. Nodin,H. Feldis,A. Persico,J. Cluzel,Paolo Lorenzi,L. Massari,Rosario Rao,Fernanda Irrera,F. Aussenac,C. Carabasse,M. Coue,P. Calka,Eugénie Martinez,L. Perniola,P. Blaise,Zheng Fang,Y. H. Yu,Gerard Ghibaudo,Damien Deleruyelle,Marc Bocquet,Ch. Muller,Andrea Padovani,Onofrio Pirrotta,Luca Vandelli,Luca Larcher,G. Reimbold,B. De Salvo +32 more
TL;DR: In this article, the role of TiN/Ti electrodes is explained and modeled based on the presence of HfO x interfacial layer underneath the electrode, which strongly reduces forming and switching voltages with respect to Pt-Pt devices.