G
G. Reimbold
Researcher at European Automobile Manufacturers Association
Publications - 147
Citations - 1959
G. Reimbold is an academic researcher from European Automobile Manufacturers Association. The author has contributed to research in topics: Electron mobility & Gate oxide. The author has an hindex of 22, co-authored 147 publications receiving 1860 citations.
Papers
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Proceedings ArticleDOI
Characterization and modeling of hysteresis phenomena in high K dielectrics
Charles Leroux,J. Mitard,Gerard Ghibaudo,X. Garros,G. Reimbold,B. Guillaumor,François Martin +6 more
TL;DR: In this paper, an original technique for the dynamic analysis of Id(Vg) hysteresis on high K stacks is proposed, allowing the characterization of Vt shift transients at short times.
Proceedings ArticleDOI
Experimental and theoretical study of electrode effects in HfO 2 based RRAM
C. Cagli,J. Buckley,Vincent Jousseaume,T. Cabout,Anne-Claire Salaün,H. Grampeix,J. F. Nodin,H. Feldis,A. Persico,J. Cluzel,Paolo Lorenzi,L. Massari,Rosario Rao,Fernanda Irrera,F. Aussenac,C. Carabasse,M. Coue,P. Calka,Eugénie Martinez,L. Perniola,P. Blaise,Zheng Fang,Y. H. Yu,Gerard Ghibaudo,Damien Deleruyelle,Marc Bocquet,Ch. Muller,Andrea Padovani,Onofrio Pirrotta,Luca Vandelli,Luca Larcher,G. Reimbold,B. De Salvo +32 more
TL;DR: In this article, the role of TiN/Ti electrodes is explained and modeled based on the presence of HfO x interfacial layer underneath the electrode, which strongly reduces forming and switching voltages with respect to Pt-Pt devices.
Journal ArticleDOI
Carbon-doped GeTe: A promising material for Phase-Change Memories
G. Betti Beneventi,L. Perniola,Veronique Sousa,E. Gourvest,E. Gourvest,Sylvain Maitrejean,J.C. Bastien,A. Bastard,Bérangère Hyot,Alain Fargeix,C. Jahan,J. F. Nodin,A. Persico,Andrea Fantini,D. Blachier,Alain Toffoli,S. Loubriat,A. Roule,Sandrine Lhostis,H. Feldis,G. Reimbold,T. Billon,B. De Salvo,Luca Larcher,Paolo Pavan,Daniel Bensahel,Pascale Mazoyer,Roberto Annunziata,Paola Zuliani,Fabien Boulanger +29 more
TL;DR: In this paper, the authors investigated carbon-doped GeTe (GeTeC) as a novel material for phase-change memories (PCM) and reported very good data retention properties and reduction of RESET current.
Journal ArticleDOI
Electrical analysis of external mechanical stress effects in short channel MOSFETs on (0 0 1) silicon
TL;DR: In this article, an electrical analysis of external mechanical stress effects on devices characteristics for long and short channel MOSFETs in advanced 0.13 μm technology is presented.
Journal ArticleDOI
Experimental and theoretical investigation of nonvolatile memory data-retention
B. De Salvo,Gerard Ghibaudo,G. Pananakakis,G. Reimbold,F. Mondond,Bernard Guillaumot,Philippe Candelier +6 more
TL;DR: In this article, an extensive investigation of floating-gate memory charge retention is presented, and it is shown that the retention time varies linearly with temperature T rather than with 1/T as commonly assumed, yielding a drastic reduction in the extrapolated time-to-failure.