B
B. De Salvo
Researcher at École nationale supérieure d'électronique et de radioélectricité de Grenoble
Publications - 172
Citations - 3105
B. De Salvo is an academic researcher from École nationale supérieure d'électronique et de radioélectricité de Grenoble. The author has contributed to research in topics: Silicon & Phase-change memory. The author has an hindex of 28, co-authored 166 publications receiving 2928 citations. Previous affiliations of B. De Salvo include IBM & STMicroelectronics.
Papers
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Proceedings ArticleDOI
A stacked SONOS technology, up to 4 levels and 6nm crystalline nanowires, with Gate-All-Around or independent gates (φ-Flash), suitable for full 3D integration
Arnaud Hubert,Etienne Nowak,K. Tachi,V. Maffini-Alvaro,C. Vizioz,Christian Arvet,J. P. Colonna,J.M. Hartmann,Virginie Loup,L. Baud,S. Pauliac,Vincent Delaye,C. Carabasse,G. Molas,Gerard Ghibaudo,B. De Salvo,O. Faynot,Thomas Ernst +17 more
TL;DR: In this article, the Gate-All-Around (GAA) SONOS memory architecture with 4-level crystalline nanowire channels (down to 6nm-diameter) is extended to an independent double gate memory architecture, called φ-Flash.
Journal ArticleDOI
Experimental and theoretical investigation of nano-crystal and nitride-trap memory devices
B. De Salvo,Gerard Ghibaudo,G. Pananakakis,Pascal Masson,Thierry Baron,N. Buffet,A. Fernandes,B. Guillaumot +7 more
TL;DR: In this article, a thorough experimental and theoretical investigation of memory-cell structures employing discrete-trap type storage nodes, using either natural nitride traps or semiconductor nano-crystals, is presented.
Proceedings ArticleDOI
How far will silicon nanocrystals push the scaling limits of NVMs technologies
B. De Salvo,Cosimo Gerardi,Salvatore Lombardo,Thierry Baron,L. Perniola,Denis Mariolle,P. Mur,Alain Toffoli,Marc Gely,M.N. Séméria,Simon Deleonibus,G. Ammendola,V. Ancarani,M. Melanotte,Roberto Bez,L. Baldi,D. Corso,Isodiana Crupi,R. A. Puglisi,Giuseppe Nicotra,Emanuele Rimini,Frédéric Mazen,Gerard Ghibaudo,G. Pananakakis,Christian Monzio Compagnoni,Daniele Ielmini,A.L. Lacaita,Alessandro S. Spinelli,Y. M. Wan,K. van der Jeugd +29 more
TL;DR: In this paper, the first time, memory devices with optimized high density (2E12#/cm/sup 2/) LPCVD Si nanocrystals have been reproducibly achieved and studied on an extensive statistical basis (from single cell up to 1 Mb test array under different programming conditions).
Proceedings ArticleDOI
Understanding RRAM endurance, retention and window margin trade-off using experimental results and simulations
Cecile Nail,G. Molas,P. Blaise,G. Piccolboni,Benoit Sklenard,C. Cagli,Mathieu Bernard,A. Roule,M. Azzaz,E. Vianello,C. Carabasse,R. Berthier,David Cooper,C. Pelissier,T. Magis,Gerard Ghibaudo,Christophe Vallée,D. Bedeau,O. Mosendz,B. De Salvo,L. Perniola +20 more
TL;DR: In this article, the correlation between endurance, window margin and retention of resistive RAM was investigated, showing high window margin up to 1010 cycles or high 300°C retention.
Proceedings ArticleDOI
Experimental and theoretical study of electrode effects in HfO 2 based RRAM
C. Cagli,J. Buckley,Vincent Jousseaume,T. Cabout,Anne-Claire Salaün,H. Grampeix,J. F. Nodin,H. Feldis,A. Persico,J. Cluzel,Paolo Lorenzi,L. Massari,Rosario Rao,Fernanda Irrera,F. Aussenac,C. Carabasse,M. Coue,P. Calka,Eugénie Martinez,L. Perniola,P. Blaise,Zheng Fang,Y. H. Yu,Gerard Ghibaudo,Damien Deleruyelle,Marc Bocquet,Ch. Muller,Andrea Padovani,Onofrio Pirrotta,Luca Vandelli,Luca Larcher,G. Reimbold,B. De Salvo +32 more
TL;DR: In this article, the role of TiN/Ti electrodes is explained and modeled based on the presence of HfO x interfacial layer underneath the electrode, which strongly reduces forming and switching voltages with respect to Pt-Pt devices.