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Institution

ASRC Aerospace Corporation

About: ASRC Aerospace Corporation is a based out in . It is known for research contribution in the topics: In situ resource utilization & Propulsion. The organization has 194 authors who have published 404 publications receiving 4748 citations.


Papers
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Proceedings Article
07 Mar 2009
TL;DR: In this paper, the remaining useful life prediction for the isolated gate bipolar transistor (IGBT) is based on the particle filter framework, leveraging data from an accelerated aging tests on IGBTs.
Abstract: Electronics components have and increasingly critical role in avionics systems and for the development of future aircraft systems. Prognostics of such components is becoming a very important research filed as a result of the need to provide aircraft systems with system level health management. This paper reports on a prognostics application for electronics components of avionics systems, in particular, its application to the Isolated Gate Bipolar Transistor (IGBT). The remaining useful life prediction for the IGBT is based on the particle filter framework, leveraging data from an accelerated aging tests on IGBTs. The accelerated aging test provided thermal-electrical overstress by applying thermal cycling to the device. In-situ state monitoring, including measurements of the steady-state voltages and currents, electrical transients, and thermal transients are recorded and used as potential precursors of failure.

12 citations

01 Nov 2013
TL;DR: In this paper, a wind tunnel experiment was conducted in the NASA Glenn Research Center anechoic 9- by 15-foot Low-Speed Wind Tunnel to investigate two new advanced noise reduction technologies in support of the NASA Fundamental Aeronautics Program Subsonic Fixed Wing Project.
Abstract: A wind tunnel experiment was conducted in the NASA Glenn Research Center anechoic 9- by 15-Foot Low-Speed Wind Tunnel to investigate two new advanced noise reduction technologies in support of the NASA Fundamental Aeronautics Program Subsonic Fixed Wing Project. The goal of the experiment was to demonstrate the noise reduction potential and effect on fan model performance of the two noise reduction technologies in a scale model Ultra-High Bypass turbofan at simulated takeoff and approach aircraft flight speeds. The two novel noise reduction technologies are called Over-the-Rotor acoustic treatment and Soft Vanes. Both technologies were aimed at modifying the local noise source mechanisms of the fan tip vortex/fan case interaction and the rotor wake-stator interaction. For the Over-the-Rotor acoustic treatment, two noise reduction configurations were investigated. The results showed that the two noise reduction technologies, Over-the-Rotor and Soft Vanes, were able to reduce the noise level of the fan model, but the Over-the-Rotor configurations had a significant negative impact on the fan aerodynamic performance; the loss in fan aerodynamic efficiency was between 2.75 to 8.75 percent, depending on configuration, compared to the conventional solid baseline fan case rubstrip also tested. Performance results with the Soft Vanes showed that there was no measurable change in the corrected fan thrust and a 1.8 percent loss in corrected stator vane thrust, which resulted in a total net thrust loss of approximately 0.5 percent compared with the baseline reference stator vane set.

12 citations

Journal ArticleDOI
TL;DR: In this article, the authors investigated the use of tantalum silicide (TaSi2, 400 nm)/platinum (Pt, 200 nm)/iridium (Ir), 200 nm), and iridium (200 nm) as both a bond metal and a diffusion barrier to prevent oxygen (from air) and gold (from the wire bond) from infiltrating silicon carbide (SiC) monolithically integrated circuits operating above 500°C for over 1000 h in air.
Abstract: We investigate use of tantalum silicide (TaSi2, 400 nm)/platinum (Pt, 200 nm)/iridium (Ir, 200 nm)/platinum (Pt, 200 nm) as both a bond metal and a diffusion barrier to prevent oxygen (from air) and gold (from the wire bond) from infiltrating silicon carbide (SiC) monolithically integrated circuits operating above 500°C for over 1000 h in air. The TaSi2/Pt/Ir/Pt metallization is easily bonded for electrical connection to off-chip circuitry and does not require extra anneals or masking steps. It can be used directly on ohmic contact metals, dielectric insulating layers, or interconnect metal, because it adheres to silicon dioxide (SiO2), silicon nitride (Si3N4), and titanium (Ti). In this study, we investigate use of the new metallization of TaSi2/Pt/Ir/Pt (in deposition order) with TaSi2 resting on top of a Ti-SiC contact annealed at 600°C for 30 min in nitrogen, which allows the TaSi2 layer to react with the bottom platinum layer to form the Pt2Si diffusion barrier at the Pt-Ir interface. Since the iridium layer does not readily form a silicide, it prevents the silicon from migrating into the topmost platinum layer during further annealing or high-temperature integrated circuit operation. This leaves a pure platinum layer at the surface, ideal for gold wire bonding. We discuss the characteristics of the TaSi2/Pt/Ir/Pt metallization at 500°C after 10 h, 100 h, and 1000 h in air ambient and N2 ambient. Auger electron spectroscopy (AES) depth profiles of the metallization and field-emission scanning electron microscopy-focused ion beam (FESEM-FIB) cross-sections are also discussed.

12 citations

Proceedings ArticleDOI
06 Mar 2010
TL;DR: In this article, a large-scale Fault Detection, Isolation and Recovery (FDIR) system is proposed to perform health management functions for both a launch vehicle and the ground systems that support the vehicle during checkout and launch countdown by using a suite of complimentary software tools that alert operators to anomalies and failures in real-time.
Abstract: The1,2 purpose of this paper is to document the modeling considerations and performance metrics that were examined in the development of a large-scale Fault Detection, Isolation and Recovery (FDIR) system. The FDIR system is envisioned to perform health management functions for both a launch vehicle and the ground systems that support the vehicle during checkout and launch countdown by using a suite of complimentary software tools that alert operators to anomalies and failures in real-time.

12 citations

17 Oct 2011
TL;DR: In this paper, the shape memory behavior and thermo-mechanical properties were studied using thermally actuated shape memory epoxies and nanocomposites and preliminary results from dynamic mechanical analysis (DMA) showed that the addition of graphene improved shape memory recovery by reducing the crosslinking density and increasing the elasticity of the composite.
Abstract: Shape memory polymers (SMPs) and composites are a special class of smart materials known for their ability to change size and shape upon exposure to an external stimulus (e.g. light, heat, pH, or magnetic field). These materials are commonly used for biomedical applications; however, recent attempts have been made towards developing SMPs and composites for use in aircraft and space applications. Implementing SMPs and composites to create a shape change effect in some aircraft structures could potentially reduce drag, decrease fuel consumption, and improve engine performance. This paper discusses the development of suitable materials to use in morphing aircraft structures. Thermally responsive epoxy SMPs and nanocomposites were developed and the shape memory behavior and thermo-mechanical properties were studied. Overall, preliminary results from dynamic mechanical analysis (DMA) showed that thermally actuated shape memory epoxies and nanocomposites possessed Tgs near approximately 168 C. When graphene nanofiller was added, the storage modulus and crosslinking density decreased. On the other hand, the addition of graphene enhanced the recovery behavior of the shape memory nanocomposites. It was assumed that the addition of graphene improved shape memory recovery by reducing the crosslinking density and increasing the elasticity of the nanocomposites.

12 citations


Authors

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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
20211
20192
20184
20174
20162
20142