National Chung Hsing University

About: National Chung Hsing University is a education organization based out in Taichung, Taiwan. It is known for research contribution in the topics: Catalysis & Thin film. The organization has 19443 authors who have published 24060 publications receiving 540154 citations. The organization is also known as: NCHU.

A high performance dye-sensitized solar cell with a novel nanocomposite film of PtNP/MWCNT on the counter electrode

Abstract: An imide-functionalized material, poly(oxyethylene)-segmented polymer, was synthesized from the reaction of poly(oxyethylene)diamine of 2000 g mol−1Mw and 4,4′-oxydiphthalic anhydride and used to disperse hybrid nanomaterials of platinum nanoparticles and multi-wall carbon nanotubes (PtNP/MWCNT). The composite material was spin-coated into film and further prepared as the counter electrode (PtNP/MWCNT-CE) for a dye-sensitized solar cell (DSSC). The short-circuit current density (JSC) and power-conversion efficiency (η) of the DSSC with PtNP/MWCNT-CE were found to be 18.01 ± 0.91 mA cm−2 and 8.00 ± 0.23%, respectively, while the corresponding values were 14.62 ± 0.19 mA cm−2 and 6.92 ± 0.07% for a DSSC with a bare platinum counter electrode (Pt-CE). The presence and distribution of PtNP/MWCNT on the CE were characterized by using scanning electron microscopy (SEM), atomic force microscopy (AFM), energy dispersive spectroscopy (EDS), and X-ray diffraction (XRD). The attachment of PtNPs on MWCNTs was observed by transmission electron microscopy (TEM). Cyclic voltammetry (CV), incident-photo-to-current efficiency (IPCE) and electrochemical impedance spectra (EIS) were correlated to explain the efficacy of this nanocomposite system.

Doping: A Key Enabler for Organic Transistors.

Abstract: Organic field-effect transistors (OFETs) are the central building blocks of organic electronics, but still suffer from low performance and manufacturing difficulties. This is due in part to the absence of doping, which is mostly excluded from OFET applications for the concern about uncontrollable dopant diffusion. Doping enabled the modern semiconductor industry to build essential components like Ohmic contacts and P-N junctions, empowering devices to function as designed. Recent breakthroughs in organic semiconductors and doping techniques demonstrated that doping can also be a key enabler for high-performance OFETs. However, the knowledge of organic doping remains limited particularly for OFET use. Therefore, this review addresses OFET doping from a device perspective. The paper overviews doping basics and roles in advanced complementary technologies. These fundamentals help to understand why and how doping provides the desired transistor characteristics. Typical OFETs without doping are discussed, with consideration for operating principle and problems caused by the absence of doping. Achievements for channel, contact, and overall doping are also examined to clarify the corresponding doping roles. Finally, doping mechanisms, techniques, and dopants associated with OFET applications are reviewed. This paper promotes fundamental understanding of OFET doping for the development of high-performance OFETs with doped components.