Sri Ramakrishna Engineering College

About: Sri Ramakrishna Engineering College is a based out in . It is known for research contribution in the topics: Computer science & Control theory. The organization has 1030 authors who have published 843 publications receiving 3822 citations.

Intelligent music player with ARM7

Abstract: The usual search options provided in music player are very less in number. In this paper, the number of options for accessing the music player are increased. The ARM 7 Microprocessor is used to perform the control operation. Here speech recognition and touch interface are used to access the music player. This is beneficial to people in many ways.

Miscellaneous Applications of Nanostructures

Abstract: Other than energy, environment, electronic and biomedical applications, the nanostructured materials used in more advanced and sensitive applications like cosmetics, food processing, communication and security purpose. This chapter describes all the applications related to above mentioned sectors.

A Multiresolution Transform Based Detection of Throat Abnormalities

Abstract: Medical image processing is gaining rapid significance as it plays a vital role in early detection and processing for getting intimate details for further treatment which has led to complete cure of fatal diseases which were once considered incurable. State of the art medical diagnosis equipments incorporated with signal processors have made the diagnosis quite fast and accurate. A multi resolution based detection of abnormality in the throat has been proposed in this paper which is based on a multi resolution approximation. Comparison of extracted feature points and certain other parameters between the reference and the image under study have been made use of in detection of the abnormality. The performance measures indicate a relatively good performance in terms of the detection rate and the image quality after processing when compared with existing techniques.

6 GHz GaN HEMT Linear Power Amplifier

Abstract: The design and analysis of GaN HEMT linear power amplifier to operate at 6 GHz frequency is presented in this work. The GaN HEMT with 800 nm gate length, was power matched at the frequency of 6 GHz. The linear model of the GaN HEMT was derived from the scattering parameter data for designing the power amplifier. The power amplifier displayed a power gain of 9 dB and noise figure of 2 dB at 6 GHz frequency. The Rollet’s Stability factor of the linear power amplifier at 6 GHz frequency is 1.4, hence the amplifier is stable. The scattering parameters of the GaN HEMT power amplifier were also obtained. At 6 GHz frequency the power amplifier exhibited an input return loss of -19 dB.