Showing papers in "Materials Science in Semiconductor Processing in 2011"

TL;DR: In this article, the size of the NiO nanoparticles was estimated by X-ray powder diffraction (XRD) pattern, which was in good agreement with the particle size calculated by transmission electron microscopy (TEM).

TL;DR: In this article, the authors have synthesized nanocrystalline ZnO and Ag-ZnO by sol-gel method and characterized by X-ray diffraction, energy dispersive Xray spectrum, scanning electron micrographs and UV-vis diffuse reflectance, photoluminescence and electrochemical impedance spectra.

TL;DR: In this paper, Eu-doped ZnO nanosheets with irregular porous microstructure were successfully prepared by a simple hydrothermal method, and the microstructures, morphologies and optical properties of the as-prepared nanOSheets were investigated by X-ray diffraction (XRD), transmission electron microscopy (TEM), high-resolution transmission electron microscope (HRTEM), Xray photoelectron spectroscopy (XPS), photoluminescence spectroscope (PL), and Raman spectroscopic analysis.

TL;DR: In this article, the structural and optical properties of ZnO films were studied as a function of substrate temperature, and the X-ray diffraction measurements showed that the films optical gap increases with an increase in substrate temperature.

TL;DR: In this paper, a Gaussian distribution of the barrier height of the Schottky barrier diodes in the temperature range 80-400 K was found to be strongly dependent on temperature.

TL;DR: In this article, the effects of silicon substrates with different orientations on the morphological and optical properties as well as biaxial stress of ZnO nanowires were investigated.

TL;DR: In this article, Nanocrystalline 2% cobalt doped ZnO films were successfully prepared using a simple chemical solution method on glass substrates and subsequently annealed in air at 300 and 500°C.

TL;DR: Hollow N, Co co-doped TiO2/SiO2 microspheres (CNT) have been prepared by in-suit polymerization and chemical adsorption methods, using polystyrene microsphere (PS) as the templates, tetraethylorthosilicate (TEOS) and tetrabutyltitanate (TBOT) as precursors, triethylamine and cobaltous nitrate as N and Co sources, respectively as discussed by the authors.

TL;DR: In this article, the structure and electrical properties of ZnO:Al thin films were investigated by X-ray diffraction, optical transmittance spectroscopy, and Hall measurements.

TL;DR: In this article, the photoresponse and electrical characterization of the photodiode based nanofibers n-ZnO and p-Si semiconductors have been investigated.

TL;DR: In this article, the effect of substrate temperature on the electrical, morphology, and optical characteristics of indium doped zinc oxide (ZnO:In) thin solid films was studied, and it was found that, as the substrate temperature increases, the electrical resistivity decreases, reaching a minimum value in the order of 7.3×10 −3 ǫ cm, at 415°C.

TL;DR: In this paper, a dc magnetron sputtering Ni on the epitaxy n-type Si was used to form Ni/n-Si SBD contacts with temperature-dependent I-V characteristics.

TL;DR: In this paper, the power factor of Bi 2 Te 3 /polyaniline composites was shown to be lower than that of the Bi 2 T 3 or polyanilines, and remains unchanged with temperature.

TL;DR: In this article, a ZrO2 thin film has been formed on n-type 4H-SiC substrate using a combination of metal sputtering (∼25 nm) and thermal oxidation (15 min at 500 °C) processes.

TL;DR: In this paper, the authors have shown that the processing of wafers which were segregated based on their minority carrier lifetime results in increase in yield of the production line and also resulted in improvement of electrical performance of the batch processed solar cells.

TL;DR: In this article, a microwave method was used for preparation of zinc oxide nanoparticles (ZnONPs) using an ionic liquid, trihexyltetradecylphosphonium bis{(trifluoromethyl)sulfonyl}-imide, as a green solvent.

TL;DR: In this paper, the structural, optical and electrical properties of vacuum-evaporated CdS thin films were investigated as a function of substrate temperature (100 − 300 K) and post-deposition annealing temperature ( at 473, 573 and 673 K).

TL;DR: In this paper, NiO films have been prepared via sol-gel dip coating method at 300°C followed by annealing them at 300-°C for different durations (15-60min).

TL;DR: In this article, hydrogen peroxide pre-treatment of ZnO epitaxial layers was used to improve the electrical behavior of Au/ZnO Schottky contacts.

TL;DR: In this article, the Raman spectra of unannealed and annealed ZnO:Ag films were studied and the results indicated that the ZnOs could still retain their wurtzite structure; the A 1 (LO) mode resulting from oxygen vacancies and zinc interstitials was observed to be very strong in the Ramran spectra.

TL;DR: In this paper, the authors investigated the strain-induced low-temperature behavior of Si1−xGex whiskers' magnetoresistance and estimated the prospects for the creation of physical values and sensing elements on the basis operating in strong magnetic fields.

TL;DR: In this article, aluminum-doped zinc oxide (AZO) powders and the powders doped with niobium and gallium were prepared by chemical co-precipitation method.

TL;DR: In this paper, a ZnS thin film has been grown on an n-Si substrate for obtaining Zn/ZnS/n-Si/Au-Sb sandwich structure by using the Successive Ionic Layer Adsorption and Reaction (SILAR) method.

TL;DR: In this article, the effect of the thickness of a Rhodamine B film on the electronic properties of Al/Rhodamine B/p-Si structures has been investigated by evaluating electrical parameters, such as the barrier height, ideality factor, series resistance and interface state density.

TL;DR: Physical and electrical properties of CeO2 thin film deposited on p-type silicon substrate via the RF magnetron sputtering technique after treating in argon ambient at different annealing temperatures has been investigated and reported as discussed by the authors.

TL;DR: In this article, the structural, optical and magnetic properties of co-doped ZnO thin films have been investigated, and it was demonstrated experimentally that high-temperature ferromagnetism in Co-Doped znO can be obtained through increasing the carrier concentration, which was realized by doping a few percent of Al ions using a simple fabrication method.

TL;DR: In this paper, the influence of high temperature AlN buffer thickness on the property of GaN film on Si (1.1) substrate was studied, and the results demonstrated that thickness of the high temperature buffer prominently influenced the morphology and the crystal quality of the GaN epilayer.

TL;DR: In this paper, the change of stoichiometric ratio caused by the increase in sputtering power in Al-doped ZnO (AZO) films was investigated, where the films were grown by pulsed dc magnetron sputtering with a cylindrical target.

TL;DR: In this article, a hydrogen assisted reactive ion etching method was used to achieve grass-free high aspect ratio vertical or three-dimensional structures on silicon substrates, and the improved wetting properties of the grass-full surfaces were investigated.

TL;DR: In this paper, the structure and morphology of the products were characterized by means of X-ray powder diffraction (XRD), scanning electron microscope (SEM) and transmission electron microscopy (TEM), whose results indicated that the sample was spherical in morphology with diameters of 15-20nm.