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Journal ArticleDOI

A 30.5 dBm 48% PAE CMOS Class-E PA With Integrated Balun for RF Applications

TLDR
In particular, insights in the design of a fully differential cascode topology for high efficiency and reliable operation are provided and a narrowband lumped element balun, employing minimum number of integrated inductors for minimum power loss, is introduced.
Abstract
Integration of the power amplifier together with signal processing in a transmitter is still missing in demanding RF commercial products. Issues preventing PA integration include LO pulling phenomena, thermal dissipation, and power efficiency. In this work we investigate high efficiency watt range Class-E PAs and integrated baluns. In particular, insights in the design of a fully differential cascode topology for high efficiency and reliable operation are provided and a narrowband lumped element balun, employing minimum number of integrated inductors for minimum power loss, is introduced. Two versions have been manufactured using a 0.13 mum CMOS technology. The first comprises the driver, and a differential PA connected to an external low-loss commercial balun. Experiments prove 31 dBm delivered output power, with 58% PAE and 67% drain efficiency, at 1.7 GHz. The second version adopts the same driver and PA and also integrates the balun. Experiments prove 30.5 dBm delivered output power, with 48% PAE and 55% drain efficiency, at 1.6 GHz.

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Journal ArticleDOI

The Design of CMOS Radio-Frequency Integrated Circuits

Brian Ellis
- 01 Aug 2004 - 
TL;DR: In this paper, the authors present a solution manual for the design of radio frequency integrated circuits (RFIC) solution manual, which can be found in the ePUB format.
Journal ArticleDOI

A Fully Integrated Dual-Mode Highly Linear 2.4 GHz CMOS Power Amplifier for 4G WiMax Applications

TL;DR: A single-chip linear CMOS PA with sufficient power and linearity for emerging OFDM-based 4G WiMAX applications and a novel bypass network is introduced to ensure stability without sacrificing gain.
Journal ArticleDOI

A Fully-Integrated Efficient CMOS Inverse Class-D Power Amplifier for Digital Polar Transmitters

TL;DR: A fully-integrated, high-efficiency inverse Class-D power amplifier in 65nm CMOS process, integrated into a mixed-signal polar transmitter and meets the 802.11g (54Mbps 64QAM OFDM) spectral mask and EVM requirements with more than 18% average efficiency.
Journal ArticleDOI

A CMOS Class-E Power Amplifier With Voltage Stress Relief and Enhanced Efficiency

TL;DR: In this paper, a class-E power amplifier with double-resonance circuit is proposed to reduce voltage stress on CMOS transistors. But the performance of the amplifier is limited.
Journal ArticleDOI

A Fully-Integrated High-Power Linear CMOS Power Amplifier With a Parallel-Series Combining Transformer

TL;DR: A linear CMOS power amplifier with high output power (34-dBm saturated output power) for high data-rate mobile applications is introduced and a parallel-series combining transformer (PSCT) is proposed, which mitigates drawbacks and limitations of conventional power-combining transformers.
References
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Journal Article

The design of CMOS radio-frequency integrated circuits, 2nd edition

TL;DR: This expanded and thoroughly revised edition of Thomas H. Lee's acclaimed guide to the design of gigahertz RF integrated circuits features a completely new chapter on the principles of wireless systems.
Journal ArticleDOI

Class E-A new class of high-efficiency tuned single-ended switching power amplifiers

TL;DR: In this article, a load network is synthesized to have a transient response which maximizes power efficiency even if the active device switching times are substantial fractions of the a.c. cycle.

Class-e - new class of high-efficiency tuned single-ended switching power amplifiers

No Sokal, +1 more
TL;DR: Advantages of Class E are unusually high efficiency, a priori designability, large reduction in second-breakdown stress, low sensitivity to active-device characteristics, and potential for high-efficiency operation at higher frequencies than previously published Class-D circuits.
Journal ArticleDOI

Monolithic transformers for silicon RF IC design

TL;DR: A comprehensive review of the electrical performance of passive transformers fabricated in silicon IC technology is presented, and the characteristics of two-port and multiport transformers and baluns are presented from both computer simulation and experimental measurements.
Journal ArticleDOI

A 1.9-GHz, 1-W CMOS class-E power amplifier for wireless communications

TL;DR: In this article, a 1-W, class-E power amplifier is implemented in a 0.35-/spl mu/m CMOS technology and suitable for operations up to 2 GHz.
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