Journal ArticleDOI
A 40-50-GHz SiGe 1 : 8 differential power divider using shielded broadside-coupled striplines
J.W. May,Gabriel M. Rebeiz +1 more
TLDR
In this article, a 1 : 8 differential power divider is implemented in a commercial SiGe BiCMOS process using fully shielded broadside-coupled striplines integrated vertically in the silicon interconnect stackup.Abstract:
This paper presents a 1 : 8 differential power divider implemented in a commercial SiGe BiCMOS process using fully shielded broadside-coupled striplines integrated vertically in the silicon interconnect stackup. The 1 : 8 power divider is only 1.12 x1.5 mm2 including pads, and shows 0.4-dB rms gain imbalance and <3deg rms phase imbalance from 40 to 50 GHz over all eight channels, a measured power gain of 14.9 plusmn0.6 dB versus a passive divider at 45 GHz, and a 3-dB bandwidth from 37 to 52 GHz. A detailed characterization of the shielded broadside-coupled striplines is presented and agrees well with simulations. These compact lines can be used for a variety of applications in SiGe/CMOS millimeter-wave circuits, including differential signal distribution, miniature power dividers, matching networks, filters, couplers, and baluns.read more
Citations
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Journal ArticleDOI
A Millimeter-Wave (40–45 GHz) 16-Element Phased-Array Transmitter in 0.18- $\mu$ m SiGe BiCMOS Technology
TL;DR: This paper demonstrates a 16-element phased-array transmitter in a standard 0.18-mum SiGe BiCMOS technology for Q-band satellite applications, based on the all-RF architecture with 4-bit RF phase shifters and a corporate-feed network.
Book
Compact Hierarchical Bipolar Transistor Modeling with Hicum
TL;DR: This book begins with an overview on the different device designs of modern bipolar transistors, along with their relevant operating conditions; while the subsequent chapter on transistor theory is subdivided into a review of mostly classical theories, brought into context with modern technology.
Journal ArticleDOI
A Fundamental Frequency 120-GHz SiGe BiCMOS Distance Sensor With Integrated Antenna
TL;DR: In this article, the first fundamental frequency single-chip transceiver operating at -band was described, which integrates on a single chip two 120 GHz voltage-controlled oscillators (VCOs), a 120 GHz divide-by-64 chain, two in-phase/quadrature (IQ) receivers with phase-calibration circuitry, a variable gain transmit amplifier, an antenna directional coupler, a patch antenna, bias circuitry, transmit power detector, and a temperature sensor.
Journal ArticleDOI
A New Balanced-to-Balanced Power Divider/Combiner
Bin Xia,Lin-Sheng Wu,Jun-Fa Mao +2 more
TL;DR: In this paper, a new balanced-to-balanced power divider/combiner with equal power division is proposed, and the theoretical, simulated and measured results all show a good mixed-mode performance.
Journal ArticleDOI
A Balanced-to-Balanced Power Divider With Arbitrary Power Division
TL;DR: In this paper, a balanced-to-balanced power divider with arbitrary power division was proposed, which can be regarded as the balanced form of a Gysel power dividers.
References
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Journal ArticleDOI
Combined differential and common-mode scattering parameters: theory and simulation
Abstract: A theory for combined differential and common-mode normalized power waves is developed in terms of even and odd mode impedances and propagation constants for a microwave coupled line system. These are related to even and odd-mode terminal currents and voltages. Generalized s-parameters of a two-port are developed for waves propagating in several coupled modes. The two-port s-parameters form a 4-by-4 matrix containing differential-mode, common-mode, and cross-mode s-parameters. A special case of the theory allows the use of uncoupled transmission lines to measure the coupled-mode waves. Simulations verify the concept of these mixed-mode s-parameters, and demonstrate conversion from mode to mode for asymmetric microwave structures. >
Journal ArticleDOI
SiGe bipolar transceiver circuits operating at 60 GHz
Brian Floyd,Scott K. Reynolds,Ullrich R. Pfeiffer,Thomas Zwick,Troy J. Beukema,Brian P. Gaucher +5 more
TL;DR: In this paper, a low-noise amplifier, direct-conversion quadrature mixer, power amplifier, and voltage-controlled oscillators have been implemented in a 1.2/spl mu/m, 200-GHz, T/290-GHz f/sub MAX/SiGe bipolar technology for operation at 60 GHz.
Journal ArticleDOI
High-speed VLSI interconnect modeling based on S-parameter measurements
TL;DR: In this paper, a first-level-metal single-conductor IC interconnect model is developed for high-speed and high-density VLSI circuit design, which includes effects such as capacitive fringing and the influence of substrate conductance.
Journal ArticleDOI
30-100-GHz inductors and transformers for millimeter-wave (Bi)CMOS integrated circuits
TL;DR: In this paper, planar and three-dimensional inductors and transformers were designed and characterized on-wafer up to 100 GHz, and the first time that spiral structures are suitable for applications such as 60-GHz wireless local area network and 77-GHz automotive RADAR.
Journal ArticleDOI
Characteristic Impedances of Broadside-Coupled Strip Transmission Lines
TL;DR: In this article, even and odd-mode characteristic impedances of shielded coupled strip-transmission-line configurations that are especially useful when close coupling is desired are given, with particular attention given to the underlying assumption that restricts the use of the formulas to cases of close coupling.