Proceedings ArticleDOI
A compact DC - 20 GHz SPDT switch circuit using lateral RF MEMS switches
Min Tang,Ai Qun Liu,A. Agarwal +2 more
- Vol. 2, pp 1-4
TLDR
In this article, a single-pole-double-throw (SPDT) switch circuit using high-aspect-ratio lateral RF microelectromechanics system (MEMS) switches has been designed to operate from DC to 20 GHz by using lateral switches and coplanar waveguide configuration.Abstract:
A new single-pole-double-throw (SPDT) switch circuit using high-aspect-ratio lateral RF microelectromechanics system (MEMS) switches has been designed to operate from DC to 20 GHz By using lateral switches and coplanar waveguide configuration, compactness and low-loss can be obtained The circuit provides greater than 22 dB isolation and less than 09 dB insertion losses up to 20 GHz A low-cost high-yield silicon-on-glass (SOG) fabrication process has been developed to fabricate this SPDT switch circuit The size of the whole circuit is only 164 mm /spl times/ 13 mm in arearead more
Citations
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Journal ArticleDOI
A Novel Three-State RF MEMS Switch for Ultrabroadband (DC-40 GHz) Applications
TL;DR: In this paper, the design, fabrication, and measurement results of a lateral dc-contact RF microelectromechanical system switch for ultrabroadband applications are presented. And the proposed switch is driven by a bidirectional cascaded electrothermal actuator, which can generate larger displacements and contact forces at two directions than traditional EAs.
Proceedings ArticleDOI
A SP2T and a SP4T switch using low loss piezoelectric MEMS
TL;DR: In this paper, single pole double throw (SP2T) and single pole four-throw (SP4T) switches using piezoelectric micro-electro-mechanical (MEMS) switches were measured from DC to 50 GHz.
Journal ArticleDOI
Lateral Contact Three-State RF MEMS Switch for Ground Wireless Communication by Actuating Rhombic Structures
TL;DR: A laterally actuated three-state RF microelectromechanical system switch for ground wireless communication applications is proposed, fabricated, and tested in this article, which can not only realize the off-state to on-state shifting but also provide an additional deep off state.
Proceedings ArticleDOI
A DC-30 GHz high performance packaged RF MEMS SPDT switch
TL;DR: In this paper, the development of an RF MEMS SPST (Single-Pole Single-Throw) and SPDT (SinglePole double-throw) switch fabricated on a glass substrate with hermetic package is described.
Journal ArticleDOI
Single Layer Extensible Microstrip Array Antenna Integrating SPDT Switch Circuit for Linear Polarization Switching
TL;DR: In this paper, a single layer extensible microstrip array antenna integrating a Single Pole Double Throw (SPDT) switch circuit for linear polarization switching is proposed, and the characteristics of the array antenna are investigated.
References
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Journal ArticleDOI
Low-loss lateral micromachined switches for high frequency applications
TL;DR: In this article, two novel lateral metal-contact radio-frequency microelectromechanical system (RF MEMS) switches are reported, implemented with quasi-finite ground coplanar waveguide (FGCPW) configuration and actuated by applying electrostatic force on a high-aspect-ratio cantilever beam.
Proceedings ArticleDOI
MEMS single-pole double-throw (SPDT) X and K-band switching circuits
TL;DR: In this article, single-pole double-throw (SPDT) X and K-band circuit designs incorporating low-loss microelectromechanical shunt capacitive switches are reported.
Journal ArticleDOI
Single-pole-double-throw switch based on toggle switch
TL;DR: In this paper, a single-pole double-throw (SPDT) switch based on the toggle switch is presented for low voltage actuation, high broadband application and enhanced power capability.
Proceedings ArticleDOI
A 6-18 GHz 20 W SPDT switch using shunt discrete PIN diodes
TL;DR: In this paper, a broadband high power SPDT switch using shunt discrete PIN diodes is presented, in which matching sections are added outside of shunt PINs to provide broadband characteristics.
Proceedings ArticleDOI
A single-pole double-throw (SPDT) circuit using deep etching lateral metal-contact switches
TL;DR: In this paper, a single-pole double-throw (SPDT) switching circuit that employs lateral metal-contact micromachined switches fabricated on silicon-on-insulator (SOI) wafer is demonstrated to operate from DC to 6 GHz.
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